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1. 发明申请

US20060261336A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20060261336A1
公开(公告)日：2006-11-23
申请号：US11383694
申请日：2006-05-16
申请人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
发明人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1251 , H01L27/1288 , H01L27/14623 , H01L27/3244 , H01L29/78645
摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

2. 发明授权

US07947538B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07947538B2
公开(公告)日：2011-05-24
申请号：US12534176
申请日：2009-08-03
申请人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
发明人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1251 , H01L27/1288 , H01L27/14623 , H01L27/3244 , H01L29/78645
摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.
摘要翻译：本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化，并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极。此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

3. 发明申请

US20090291536A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090291536A1
公开(公告)日：2009-11-26
申请号：US12534176
申请日：2009-08-03
申请人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
发明人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1251 , H01L27/1288 , H01L27/14623 , H01L27/3244 , H01L29/78645
摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.
摘要翻译：本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化，并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极。此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

4. 发明授权

US07608490B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07608490B2
公开(公告)日：2009-10-27
申请号：US11440175
申请日：2006-05-25
申请人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
发明人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1285 , H01L27/1288
摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.
摘要翻译：为了提供具有高操作性能和高可靠性的电路的半导体器件，并且提高了半导体器件的可靠性，从而提高了具有该半导体器件的电子器件的可靠性。上述目的是通过在沿一个方向扫描的同时，通过照射连续波激光束或重复频率为10MHz或更高的脉冲激光束来结合半导体层结晶步骤来实现的; 使用光掩模或包含由衍射光栅图案形成的辅助图案或具有降低光强度功能的半透射膜的吸收体的光刻步骤; 以及对具有低电子温度的高密度等离子体对半导体膜，绝缘膜或导电膜的表面进行氧化，氮化或表面改性的步骤。

5. 发明授权

US07579220B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07579220B2
公开(公告)日：2009-08-25
申请号：US11383694
申请日：2006-05-16
申请人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
发明人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1251 , H01L27/1288 , H01L27/14623 , H01L27/3244 , H01L29/78645
摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.
摘要翻译：本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化，并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极。此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

6. 发明申请

US20060275710A1 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US20060275710A1
公开(公告)日：2006-12-07
申请号：US11440175
申请日：2006-05-25
申请人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
发明人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
IPC分类号： G03F7/26
CPC分类号： H01L21/02683 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1285 , H01L27/1288
摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

7. 发明授权

US07687404B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07687404B2
公开(公告)日：2010-03-30
申请号：US11121073
申请日：2005-05-04
申请人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
发明人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
IPC分类号： H01L21/302
CPC分类号： H01L51/5262 , H01L27/1248 , H01L27/3244 , H01L27/3248 , H01L27/3258
摘要： In a method for manufacturing a display device having a light emitting element, a first base insulating film, a second base insulating film, a semiconductor layer, and a gate insulating film are formed in this order over a substrate. A gate electrode is formed over the gate insulating film to overlap with at least a part of the semiconductor layer, and a portion to be a pixel portion of the gate insulating film and the second base insulating film is doped with at least one conductive type impurities. An opening portion is formed by selectively etching the gate insulating film and second base insulating film that are each doped with impurities. The first base insulating film is exposed in a bottom face of the opening portion. Subsequently, an insulating film is formed to cover the opening portion, the gate insulating film, and the gate electrode, and a light emitting element is formed over the insulating film to overlap with at least a part of the opening portion.
摘要翻译：在具有发光元件的显示装置的制造方法中，在衬底上依次形成第一基底绝缘膜，第二基底绝缘膜，半导体层和栅极绝缘膜。栅极电极形成在栅极绝缘膜上方以与半导体层的至少一部分重叠，栅极绝缘膜和第二基底绝缘膜的像素部分的一部分被掺杂有至少一种导电类型的杂质。通过选择性地蚀刻各自掺杂有杂质的栅极绝缘膜和第二基底绝缘膜来形成开口部。第一基底绝缘膜在开口部的底面露出。随后，形成绝缘膜以覆盖开口部分，栅极绝缘膜和栅电极，并且在绝缘膜上形成发光元件以与开口部分的至少一部分重叠。

8. 发明授权

US07288789B2 Semiconductor device having thin film transistor and light-shielding film 有权
标题翻译：具有薄膜晶体管和遮光膜的半导体器件
公开(公告)号：US07288789B2
公开(公告)日：2007-10-30
申请号：US10446187
申请日：2003-05-28
申请人： Shunpei Yamazaki , Yukio Tanaka , Jun Koyama , Mitsuaki Osame , Satoshi Murakami , Hideto Ohnuma , Etsuko Fujimoto , Hidehito Kitakado
发明人： Shunpei Yamazaki , Yukio Tanaka , Jun Koyama , Mitsuaki Osame , Satoshi Murakami , Hideto Ohnuma , Etsuko Fujimoto , Hidehito Kitakado
IPC分类号： H01L31/0376 , H01L31/20 , H01L31/036
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/136213 , H01L27/1255 , H01L27/3244 , H01L27/3248 , H01L27/3265 , H01L27/3272 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L29/78633 , H01L29/78645 , H01L29/78675 , H01L51/5246 , H01L51/5284 , H01L2227/323
摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.
摘要翻译：一种半导体器件，其中根据电路的性能布置适当结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮的图像。栅极绝缘膜的厚度取决于重视操作速度的电路和重要的栅极绝缘击穿电压的电路，并且用于形成LDD区域的位置取决于TFT的TFT而不同重视对抗热门运营商和TFT的对策，重点针对当前的对策。这使得可以实现高性能的半导体器件。此外，存储容量由遮光膜和其氧化物形成，以使其面积最小化，并且实现了能够显示亮画面的半导体器件。

9. 发明申请

US20050255617A1 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US20050255617A1
公开(公告)日：2005-11-17
申请号：US11121073
申请日：2005-05-04
申请人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
发明人： Shunpei Yamazaki , Hideto Ohnuma , Mitsuaki Osame , Aya Anzai , Hiromichi Godo , Tomoya Futamura
IPC分类号： H01J1/62 , H01J63/04 , H01L21/00 , H01L21/77 , H01L27/32 , H01L51/52 , H05B33/10
CPC分类号： H01L51/5262 , H01L27/1248 , H01L27/3244 , H01L27/3248 , H01L27/3258
摘要： In a method for manufacturing a display device having a light emitting element, a first base insulating film, a second base insulating film, a semiconductor layer, and a gate insulating film are formed in this order over a substrate. A gate electrode is formed over the gate insulating film to overlap with at least a part of the semiconductor layer, and a portion to be a pixel portion of the gate insulating film and the second base insulating film is doped with at least one conductive type impurities. An opening portion is formed by selectively etching the gate insulating film and second base insulating film that are each doped with impurities. The first base insulating film is exposed in a bottom face of the opening portion. Subsequently, an insulating film is formed to cover the opening portion, the gate insulating film, and the gate electrode, and a light emitting element is formed over the insulating film to overlap with at least a part of the opening portion.
摘要翻译：在具有发光元件的显示装置的制造方法中，在衬底上依次形成第一基底绝缘膜，第二基底绝缘膜，半导体层和栅极绝缘膜。栅极电极形成在栅极绝缘膜上方以与半导体层的至少一部分重叠，栅极绝缘膜和第二基底绝缘膜的像素部分的一部分被掺杂有至少一种导电类型的杂质。通过选择性地蚀刻各自掺杂有杂质的栅极绝缘膜和第二基底绝缘膜来形成开口部。第一基底绝缘膜在开口部的底面露出。随后，形成绝缘膜以覆盖开口部分，栅极绝缘膜和栅电极，并且在绝缘膜上形成发光元件以与开口部分的至少一部分重叠。

10. 发明授权

US06576924B1 Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate 有权
标题翻译：半导体器件在相同的衬底上具有至少像素单元和驱动器电路单元
公开(公告)号：US06576924B1
公开(公告)日：2003-06-10
申请号：US09498646
申请日：2000-02-07
申请人： Shunpei Yamazaki , Yukio Tanaka , Jun Koyama , Mitsuaki Osame , Satoshi Murakami , Hideto Ohnuma , Etsuko Fujimoto , Hidehito Kitakado
发明人： Shunpei Yamazaki , Yukio Tanaka , Jun Koyama , Mitsuaki Osame , Satoshi Murakami , Hideto Ohnuma , Etsuko Fujimoto , Hidehito Kitakado
IPC分类号： H01L2900
CPC分类号： G02F1/13454 , G02F1/136209 , G02F1/136213 , H01L27/1255 , H01L27/3244 , H01L27/3248 , H01L27/3265 , H01L27/3272 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L29/78633 , H01L29/78645 , H01L29/78675 , H01L51/5246 , H01L51/5284 , H01L2227/323
摘要： A semiconductor device in which TFTs of suitable structures are arranged depending upon the performances of the circuits, and storage capacitors are formed occupying small areas, the semiconductor device featuring high performance and bright image. The thickness of the gate-insulating film is differed depending upon a circuit that gives importance to the operation speed and a circuit that gives importance to the gate-insulating breakdown voltage, and the position for forming the LDD region is differed depending upon the TFT that gives importance to the countermeasure against the hot carriers and the TFT that gives importance to the countermeasure against the off current. This makes it possible to realize a semiconductor device of high performance. Further, the storage capacity is formed by a light-shielding film and an oxide thereof to minimize its area, and a semiconductor device capable of displaying a bright picture is realized.
摘要翻译：一种半导体器件，其中根据电路的性能布置适当结构的TFT，并且形成占据小面积的存储电容器，该半导体器件具有高性能和明亮的图像。栅极绝缘膜的厚度取决于重视操作速度的电路和重要的栅极绝缘击穿电压的电路，并且用于形成LDD区域的位置取决于TFT的TFT而不同重视对抗热门运营商和TFT的对策，重点针对当前的对策。这使得可以实现高性能的半导体器件。此外，存储容量由遮光膜和其氧化物形成，以使其面积最小化，并且实现了能够显示亮画面的半导体器件。

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