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    • 3. 发明授权
    • Method and apparatus for refining silicon using an electron beam
    • 使用电子束精炼硅的方法和装置
    • US07704478B2
    • 2010-04-27
    • US11483187
    • 2006-07-10
    • Norichika YamauchiTakehiko ShimadaMinoru Mori
    • Norichika YamauchiTakehiko ShimadaMinoru Mori
    • C01B33/02
    • C01B33/037
    • A method and apparatus for refining silicon which can remove impurity elements such as phosphorus and antimony as well as impurity elements such as boron and carbon using an electron beam in the same vacuum chamber are provided. Silicon is irradiated and melted with an electron beam in a low vacuum inside a vacuum vessel, a compound-forming substance such as H2O which reacts with boron or the like in the molten silicon and forms a vaporizable oxide is introduced into the vacuum chamber, and impurity elements such as boron having a low vapor pressure in a vacuum are evaporated from the molten silicon as part of the vaporizable compound. Silicon in the vacuum vessel is then irradiated with an electron beam in a high vacuum in the vacuum vessel, and impurity elements contained in the silicon having a high vapor pressure in a vacuum such as phosphorus are removed.
    • 提供了一种用于精制硅的方法和装置,其可以在相同的真空室中使用电子束来除去诸如磷和锑之类的杂质元素以及诸如硼和碳的杂质元素。 将硅用真空容器内的低真空中的电子束照射和熔融,在熔融硅中与硼等反应并形成可蒸发氧化物的化合物形成物质如H 2 O被引入真空室中,并且 作为蒸发化合物的一部分,作为真空中具有低蒸气压的硼的杂质元素从熔融硅中蒸发掉。 然后在真空容器中用真空中的电子束照射真空容器中的硅,除去在诸如磷的真空中具有高蒸气压的硅中所含的杂质元素。
    • 4. 发明申请
    • Method and apparatus for refining silicon using an electron beam
    • 使用电子束精炼硅的方法和装置
    • US20070077191A1
    • 2007-04-05
    • US11483187
    • 2006-07-10
    • Norichika YamauchiTakehiko ShimadaMinoru Mori
    • Norichika YamauchiTakehiko ShimadaMinoru Mori
    • C01B33/037C01B33/02
    • C01B33/037
    • A method and apparatus for refining silicon which can remove impurity elements such as phosphorus and antimony as well as impurity elements such as boron and carbon using an electron beam in the same vacuum chamber are provided. Silicon is irradiated and melted with an electron beam in a low vacuum inside a vacuum vessel, a compound-forming substance such as H2O which reacts with boron or the like in the molten silicon and forms a vaporizable oxide is introduced into the vacuum chamber, and impurity elements such as boron having a low vapor pressure in a vacuum are evaporated from the molten silicon as part of the vaporizable compound. Silicon in the vacuum vessel is then irradiated with an electron beam in a high vacuum in the vacuum vessel, and impurity elements contained in the silicon having a high vapor pressure in a vacuum such as phosphorus are removed.
    • 提供了一种用于精制硅的方法和装置,其可以在相同的真空室中使用电子束来除去诸如磷和锑之类的杂质元素以及诸如硼和碳的杂质元素。 用真空容器内的低真空中的电子束照射硅,将熔融硅中与硼等反应的化合物形成物质如H 2 O 2熔化并形成可蒸发的 氧化物被引入到真空室中,并且作为可汽化化合物的一部分,从作为可蒸发化合物的一部分的熔融硅中蒸发真空中具有低蒸气压的硼的杂质元素。 然后在真空容器中用真空中的电子束照射真空容器中的硅,除去在诸如磷的真空中具有高蒸气压的硅中所含的杂质元素。