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    • 8. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07154179B2
    • 2006-12-26
    • US11129794
    • 2005-05-16
    • Kiyotaka TabuchiHideshi MiyajimaHideaki Masuda
    • Kiyotaka TabuchiHideshi MiyajimaHideaki Masuda
    • H01L23/48
    • H01L23/5222H01L23/53295H01L2924/0002H01L2924/00
    • A semiconductor device, wherein an increase of a capacity between wiring layers is suppressed, reliability of wiring and property of withstand voltage of a diffusion prevention insulation film can be improved and the wiring resistance can be maintained low, is provided by comprising an interlayer insulation film formed on a substrate, a wiring formed on a trench pattern formed on the interlayer insulation film, and a diffusion prevention insulation film formed on an upper surfaces of the interlayer insulation film including the wiring and preventing diffusion of metal from the wiring; wherein the diffusion prevention insulation film has a middle layer between a lowermost layer and an uppermost layer, wherein the lowermost layer is formed so as to contact the upper surfaces of the interlayer insulation layer including the wiring, the uppermost layer constitutes an uppermost portion of the diffusion prevention insulation film, and the middle layer has a lower relative dielectric constant than those of the lowermost layer and the uppermost layer.
    • 通过包括层间绝缘膜,能够提高布线层之间的容量增大的布线层的增加,布线的可靠性和扩散防止绝缘膜的耐电压性能得到提高,并且布线电阻可以维持较低 形成在基板上,形成在形成在层间绝缘膜上的沟槽图案上的布线以及形成在包括布线的层间绝缘膜的上表面上并防止金属从布线扩散的防扩散绝缘膜; 其中所述防扩散绝缘膜具有在最下层和最上层之间的中间层,其中所述最下层形成为与包括所述布线的所述层间绝缘层的上表面接触,所述最上层构成所述最上层 扩散防止绝缘膜,并且中间层具有比最下层和最上层更低的相对介电常数。
    • 10. 发明申请
    • OPTICALLY REACTIVE MASKING
    • 光学反应性掩蔽
    • US20140054754A1
    • 2014-02-27
    • US13590341
    • 2012-08-21
    • Tadayoshi WatanabeHideaki MasudaHideshi Miyajima
    • Tadayoshi WatanabeHideaki MasudaHideshi Miyajima
    • H01L21/768H01L29/02
    • H01L21/76814H01L21/3105H01L21/31111H01L21/31144
    • Systems and methods are presented for filling an opening with material of a high integrity. A material having properties in a first physical state suitable for formation of a hard mask layer and in a second physical state having properties facilitating removal of the former hard mask layer is utilized. Utilizing the material as a mask layer and subsequently removing the material enables a number of mask layers to be minimized in a subsequent filling operation (e.g., metallization). Material amenable to being in a first physical state and a second physical state is an optically reactive material. The optically reactive dielectric can comprise an element or compound which can act as an agent/catalyst in the optical conversion process along with any element or compound which can act as an accelerator for the optical reaction. Conversion can be brought about by exposure to electromagnetic radiation and/or application of thermal energy.
    • 提出了用高填充材料填充开口的系统和方法。 使用具有适于形成硬掩模层的第一物理状态的属性并且具有便于去除前者的硬掩模层的性质的第二物理状态的材料。 利用该材料作为掩模层并随后除去该材料使得能够在随后的填充操作(例如,金属化)中使多个掩模层最小化。 适于处于第一物理状态和第二物理状态的材料是光反应性材料。 光反应电介质可以包括可以在光学转换过程中作为试剂/催化剂的元素或化合物以及可用作光学反应的促进剂的任何元素或化合物。 可以通过暴露于电磁辐射和/或施加热能来实现转换。