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1. 发明授权

US4717947A Semiconductor device turned on and off by light 失效
标题翻译：半导体器件由光开启和关闭
公开(公告)号：US4717947A
公开(公告)日：1988-01-05
申请号：US675150
申请日：1984-11-27
申请人： Hideo Matsuda , Yoshiaki Tsunoda , Takashi Fujiwara , Yasunori Usui
发明人： Hideo Matsuda , Yoshiaki Tsunoda , Takashi Fujiwara , Yasunori Usui
IPC分类号： H01L31/10 , H01L29/74 , H01L29/744 , H01L29/745 , H01L29/749 , H01L31/111 , H01L27/02 , H01L27/14 , H01L29/78
CPC分类号： H01L31/1113 , H01L29/74 , H01L29/7455
摘要： A semiconductor device has a main GTO thyristor section, an auxiliary GTO thyristor section and a MOS transistor section. The main GTO thyristor section is turned on and off in accordance with a gate signal supplied to its gate terminal. The auxiliary GTO thyristor section supplies an igniting signal to the gate of the main GTO thyristor in accordance with an optical signal. The MOS transistor supplies an extinguishing signal to the gate of the main GTO thyristor section in accordance with an optical signal supplied to it.
摘要翻译：半导体器件具有主GTO晶闸管部分，辅助GTO晶闸管部分和MOS晶体管部分。主GTO晶闸管部分根据提供给其栅极端子的栅极信号而导通和截止。辅助GTO晶闸管部分根据光信号向主GTO晶闸管的栅极提供点火信号。 MOS晶体管根据提供给其的光信号向主GTO晶闸管部分的栅极提供熄灭信号。

2. 发明授权

US4695871A Light-triggered semiconductor device 失效
标题翻译：光触发半导体器件
公开(公告)号：US4695871A
公开(公告)日：1987-09-22
申请号：US526807
申请日：1983-08-26
申请人： Yoshiaki Tsunoda , Hideo Matsuda
发明人： Yoshiaki Tsunoda , Hideo Matsuda
IPC分类号： G02B6/42 , H01L31/0203 , H01L31/111 , H01L23/02 , H01L23/12
CPC分类号： H01L31/0203 , G02B6/421 , G02B6/4212 , G02B6/4295 , H01L31/1113
摘要： A light-triggered semiconductor device comprising a light-triggered semiconductor chip housed in an airtight package and a light guide connected to a light-sensitive area of the semiconductor chip, wherein that end face of the light guide which faces the semiconductor chip is chosen to have a larger diameter than the light-sensitive area formed on the main surface of the semiconductor chip, and is connected to the light-sensitive area through an elastic transparent material preliminarily fixed to the light-sensitive area.
摘要翻译：一种光触发半导体器件，包括容纳在气密封装中的光触发半导体芯片和连接到半导体芯片的光敏区域的光导，其中面向半导体芯片的导光体的端面被选择为具有比形成在半导体芯片的主表面上的感光区域更大的直径，并且通过预先固定在感光区域上的弹性透明材料连接到感光区域。

3. 发明授权

US4918514A Press-contact type semiconductor device 失效
标题翻译：压接式半导体器件
公开(公告)号：US4918514A
公开(公告)日：1990-04-17
申请号：US173458
申请日：1988-03-25
申请人： Hideo Matsuda , Yasunori Usui , Shinjiro Kojima , Masaru Ando
发明人： Hideo Matsuda , Yasunori Usui , Shinjiro Kojima , Masaru Ando
IPC分类号： H01L21/52 , H01L23/051 , H01L23/48
CPC分类号： H01L23/051 , H01L24/72 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01082 , H01L2924/1301
摘要： A soft metal plate having substantially equal hardness as emitter electrodes formed of soft metal is disposed between the emitter electrodes and a heat buffer metal plate formed of hard metal, and pressure applied to the emitter electrodes is shared by the soft metal plate, so as to reduce the thermal fatigue of the emitter electrodes.

4. 发明授权

US5248622A Finely controlled semiconductor device and method of manufacturing the same 失效
标题翻译：精细控制的半导体器件及其制造方法
公开(公告)号：US5248622A
公开(公告)日：1993-09-28
申请号：US859918
申请日：1992-05-22
申请人： Hideo Matsuda , Takashi Fujiwara , Takeomi Yoshida
发明人： Hideo Matsuda , Takashi Fujiwara , Takeomi Yoshida
IPC分类号： H01L21/332 , H01L29/08
CPC分类号： H01L29/66363 , H01L29/0834
摘要： A semiconductor device includes a substrate of a first conductivity type. A first layer of a second conductivity type is formed on one surface of the substrate of the first conductivity type. A second layer of the first conductivity type is formed on the first layer of the second conductivity type. A third layer of the first conductivity type is selectively formed on the other surface of the substrate of the first conductivity type. A fourth layer of the second conductivity type is formed on the other surface of the substrate of the first conductivity type. The vertical dimension of the fourth layer falls within a range of 5 to 20 .mu.m and is smaller than that of the first layer.
摘要翻译：半导体器件包括第一导电类型的衬底。在第一导电类型的衬底的一个表面上形成第二导电类型的第一层。第一导电类型的第二层形成在第二导电类型的第一层上。第一导电类型的第三层选择性地形成在第一导电类型的基板的另一个表面上。第二导电类型的第四层形成在第一导电类型的基板的另一个表面上。第四层的垂直尺寸落在5〜20μm的范围内，小于第一层的尺寸。

5. 发明授权

US5148254A Finely controlled semiconductor device 失效
标题翻译：精密控制半导体器件
公开(公告)号：US5148254A
公开(公告)日：1992-09-15
申请号：US633186
申请日：1990-12-28
申请人： Hideo Matsuda , Takashi Fujiwara , Takeomi Yoshida
发明人： Hideo Matsuda , Takashi Fujiwara , Takeomi Yoshida
IPC分类号： H01L21/332 , H01L29/08
CPC分类号： H01L29/66363 , H01L29/0834
摘要： A semiconductor device includes a substrate of a first conductivity type. A first layer of a second conductivity type is formed on one surface of the substrate of the first conductivity type. A second layer of the first conductivity type is formed on the first layer of the second conductivity type. A third layer of the first conductivity type is selectively formed on the other surface of the substrate of the first conductivity type. A fourth layer of the second conductivity type is formed on the other surface of the substrate of the first conductivity type. The vertical dimension of the fourth layer falls within a range of 5 to 20 .mu.m and is smaller than that of the first layer.

6. 发明授权

US5866944A Multichip press-contact type semiconductor device 失效
标题翻译：多芯片压接式半导体器件
公开(公告)号：US5866944A
公开(公告)日：1999-02-02
申请号：US665980
申请日：1996-06-19
申请人： Michiaki Hiyoshi , Takashi Fujiwara , Hideo Matsuda
发明人： Michiaki Hiyoshi , Takashi Fujiwara , Hideo Matsuda
IPC分类号： H01L29/74 , H01L23/051 , H01L23/48 , H01L25/04 , H01L25/07 , H01L25/18 , H01L23/16
CPC分类号： H01L23/051 , H01L24/72 , H01L2924/01004 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01082 , H01L2924/1305 , H01L2924/13055
摘要： In the present invention, by virtue of heat buffer plates respectively located on the major surfaces of IGBT chips and FRD chips arranged in a single plane, the total thickness of each chip and a corresponding one of the heat can be set to a substantially predetermined value. A thickness-correcting member having elongated projections corresponding to the chips is provided on those surfaces of the heat buffer plates which is remote from the chips. A heat buffer disk plate is provided on those surfaces of the chips which are opposite to the major surfaces thereof. The thickness-correcting member, the heat buffer plates and the IGBT and FRD chips are held and simultaneously pressed between an emitter press-contact electrode plate and a collector press-contact electrode plate. Before using the device, a force of press, which is higher than that applied at the time of using the device and can plastically deform the thickness-correcting member, is applied to the emitter press-contact electrode plate and the collector press-contact electrode plate, thereby correcting variations in total thickness of each semiconductor chip and a corresponding one of the heat buffer plates.
摘要翻译：在本发明中，由于分别位于布置在单个平面中的IGBT芯片和FRD芯片的主表面上的热缓冲板，每个芯片的总厚度和相应的一个热量可以被设置为基本上预定的值。具有与芯片相对应的细长突起的厚度校正构件设置在远离芯片的热缓冲板的表面上。在与其主表面相对的芯片的这些表面上设置有缓冲盘片。厚度校正构件，热缓冲板和IGBT和FRD芯片被保持并同时按压在发射极压接电极板和集电体压接电极板之间。在使用该装置之前，将加压力高于在使用该装置时施加的压力并使厚度校正构件塑性变形的压力施加到发射体压接电极板和集电体压接电极从而校正每个半导体芯片和对应的一个热缓冲板的总厚度的变化。

7. 发明授权

US5835985A Reverse conducting gate-turnoff thyristor 失效
标题翻译：反向导通栅极截止晶闸管
公开(公告)号：US5835985A
公开(公告)日：1998-11-10
申请号：US305661
申请日：1994-09-14
申请人： Michiaki Hiyoshi , Takashi Fujiwara , Hideo Matsuda , Satoshi Yanagisawa , Susumu Iesaka , Tatuo Harada
发明人： Michiaki Hiyoshi , Takashi Fujiwara , Hideo Matsuda , Satoshi Yanagisawa , Susumu Iesaka , Tatuo Harada
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/7416
摘要： A reverse conducting gate-turnoff thyristor includes a switching device section, a diode section, and an isolating section located between the switching device section and the diode section. The isolating section includes an impurity layer formed by controlling impurity diffusion and having an impurity concentration lower than those of the switching device section and the diode section.
摘要翻译：反向导通栅极截止晶闸管包括开关器件部分，二极管部分和位于开关器件部分和二极管部分之间的隔离部分。隔离部分包括通过控制杂质扩散而形成的杂质层，其杂质浓度低于开关器件部分和二极管部分的杂质浓度。

8. 发明授权

US5360985A Press-contact type semiconductor device 失效
标题翻译：压接式半导体器件
公开(公告)号：US5360985A
公开(公告)日：1994-11-01
申请号：US70040
申请日：1993-06-01
申请人： Michiaki Hiyoshi , Takashi Fujiwara , Hisashi Suzuki , Hideo Matsuda
发明人： Michiaki Hiyoshi , Takashi Fujiwara , Hisashi Suzuki , Hideo Matsuda
IPC分类号： H01L29/74 , H01L21/52 , H01L23/051 , H01L23/48 , H01L23/02
CPC分类号： H01L24/72 , H01L23/051 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055
摘要： In a semiconductor device, a pellet electrode, which is formed on a mesa-shaped pellet, and an external electrode, with which a package is provided, are in pressure-contact with each other. A soft-metal plate which has projections along its surface is arranged between the external electrode and the pellet electrode.
摘要翻译：在半导体装置中，形成在台面状颗粒上的颗粒电极和设置有封装的外部电极彼此压力接触。在外部电极和颗粒电极之间布置有沿着其表面具有突起的软金属板。

9. 发明授权

US5198882A Crimp-type power semiconductor device 失效
标题翻译： CRIMP型功率半导体器件
公开(公告)号：US5198882A
公开(公告)日：1993-03-30
申请号：US589600
申请日：1990-09-28
申请人： Hideo Matsuda , Susumu Iesaka , Takashi Fujiwara , Michiaki Hiyoshi , Hisashi Suzuki
发明人： Hideo Matsuda , Susumu Iesaka , Takashi Fujiwara , Michiaki Hiyoshi , Hisashi Suzuki
IPC分类号： H01L29/744 , H01L23/051 , H01L23/48 , H01L29/74
CPC分类号： H01L24/72 , H01L23/051 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/3025
摘要： A crimp-type semiconductor device is provided with a semiconductor substrate having a lifetime-controlled region. This lifetime-controlled region is in the form of a ring, and the lifetime of the minority carriers is shortened in the region. Second-conductivity type impurity regions, which serve as emitter layers, are formed on the semiconductor substrate such that they provide a plurality of concentric arrays. The inner diameter of the ring-like lifetime-controlled region is longer than the diameter of an enveloping circle which is obtained by connecting the radially-inner ends of the impurity regions of the outermost array.

10. 发明授权

US5140406A Crimp-type semiconductor device having non-alloy structure 失效
标题翻译：具有非合金结构的CRIMP型半导体器件
公开(公告)号：US5140406A
公开(公告)日：1992-08-18
申请号：US633954
申请日：1990-12-26
申请人： Hideo Matsuda , Takashi Fujiwara , Michiaki Hiyoshi , Hisashi Suzuki
发明人： Hideo Matsuda , Takashi Fujiwara , Michiaki Hiyoshi , Hisashi Suzuki
IPC分类号： H01L29/744 , H01L21/331 , H01L23/051 , H01L23/48 , H01L29/417 , H01L29/73 , H01L29/732 , H01L29/74
CPC分类号： H01L24/72 , H01L23/051 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01067 , H01L2924/01074 , H01L2924/01082 , H01L2924/10253 , H01L2924/1301 , H01L2924/1305
摘要： A gate turn-off thyristor of the crimp and anode shortcircuit type includes a semiconductor pellet having anode, cathode and gate electrodes formed on each of first and second main surfaces thereof, with the gate electrode entering into the cathode electrodes. First and second electrode members are positioned sandwiching the semiconductor pellet between them and opposing to the electrodes. First and second electrode posts are positioned sandwiching the semiconductor pellet and the electrode members between them and opposing to the electrode members. Those faces of the electrodes, electrode members and electrode posts which are opposed to one another are not fixed but contact-pressed to one another. The semiconductor pellet has at the outer rim portion thereof a region where no current flows. The outer rim of each of the electrode member and post terminates on the region through which no current flows.

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