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    • 1. 发明申请
    • PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD
    • 等离子体处理装置和等离子体处理方法
    • US20120000887A1
    • 2012-01-05
    • US13171990
    • 2011-06-29
    • Hideo EtoMakoto SaitoKeiji SuzukiNobuyasu Nishiyama
    • Hideo EtoMakoto SaitoKeiji SuzukiNobuyasu Nishiyama
    • C23F1/00C23F1/08
    • H01J37/321H01J37/32183H01J37/32935
    • According to one embodiment, there is provided a plasma treatment apparatus including an electrode, a first power supply circuit, a plasma generating unit, a second power supply circuit, a sensing unit, and a control unit. The electrode is arranged inside a treatment chamber. On the electrode, a substrate to be treated is placed. The first power supply circuit supplies power to the electrode. The plasma generating unit generates plasma in a space separated from the electrode inside the treatment chamber. The second power supply circuit supplies power to the plasma generating unit. The sensing unit senses a parameter output from the first power supply circuit. The control unit controls power supplied from the second power supply circuit so that the parameter sensed by the sensing unit becomes close to or substantially equal to a target value.
    • 根据一个实施例,提供了一种等离子体处理装置,其包括电极,第一电源电路,等离子体产生单元,第二电源电路,感测单元和控制单元。 电极设置在处理室内。 在电极上放置待处理的基板。 第一电源电路为电极供电。 等离子体生成单元在与处理室内部的电极分离的空间中产生等离子体。 第二电源电路向等离子体发生单元供电。 感测单元感测从第一电源电路输出的参数。 控制单元控制从第二电源电路提供的电力,使得由感测单元感测的参数变得接近或基本上等于目标值。
    • 2. 发明授权
    • Power supply control device, plasma processing device, and plasma processing method
    • 电源控制装置,等离子体处理装置和等离子体处理方法
    • US08760053B2
    • 2014-06-24
    • US13198356
    • 2011-08-04
    • Hideo EtoNobuyasu NishiyamaMakoto SaitoKeiji Suzuki
    • Hideo EtoNobuyasu NishiyamaMakoto SaitoKeiji Suzuki
    • H05B31/26H03H7/38
    • H01J37/32091H01J37/32183H01J37/32935
    • According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information.
    • 根据一个实施例,一种具有在处理室中产生等离子体的等离子体产生单元的等离子体处理装置的电源控制装置。 电源控制装置包括射频电源,存储单元和匹配电路。 射频电源为等离子体发生单元供电。 存储单元存储包括第一匹配值,第二处理条件和第三匹配值的匹配信息。 第一匹配值对应于第一处理条件的处理信息。 第二匹配值对应于第二处理条件的处理信息。 第三匹配值对应于将第一处理条件切换到第二处理条件的过渡状态的处理信息。 匹配电路根据匹配信息匹配阻抗。
    • 3. 发明申请
    • POWER SUPPLY CONTROL DEVICE, PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING METHOD
    • 电源控制装置,等离子体处理装置和等离子体处理方法
    • US20120038277A1
    • 2012-02-16
    • US13198356
    • 2011-08-04
    • Hideo ETONobuyasu NishiyamaMakoto SaitoKeiji Suzuki
    • Hideo ETONobuyasu NishiyamaMakoto SaitoKeiji Suzuki
    • H05B31/02H01L21/3065
    • H01J37/32091H01J37/32183H01J37/32935
    • According to one embodiment, a power supply control device of a plasma processing device having a plasma generation unit which generates plasma in a process chamber. The power supply control device includes a radio frequency power supply, a storage unit, and a matching circuit. The radio frequency power supply supplies a power to the plasma generation unit. The storage unit stores matching information including a first matching value, a second process condition, and a third matching value. The first matching value corresponds to process information of a first process condition. The second matching value corresponds to process information of a second process condition. The third matching value corresponds to process information of a transient state where the first process condition is being switched to the second process condition. The matching circuit matches impedances based on the matching information.
    • 根据一个实施例,一种具有在处理室中产生等离子体的等离子体产生单元的等离子体处理装置的电源控制装置。 电源控制装置包括射频电源,存储单元和匹配电路。 射频电源为等离子体发生单元供电。 存储单元存储包括第一匹配值,第二处理条件和第三匹配值的匹配信息。 第一匹配值对应于第一处理条件的处理信息。 第二匹配值对应于第二处理条件的处理信息。 第三匹配值对应于将第一处理条件切换到第二处理条件的过渡状态的处理信息。 匹配电路根据匹配信息匹配阻抗。
    • 4. 发明授权
    • Fuel cut-off valve
    • 燃油截止阀
    • US08616232B2
    • 2013-12-31
    • US12819649
    • 2010-06-21
    • Keiji SuzukiNorikazu Sugimura
    • Keiji SuzukiNorikazu Sugimura
    • F16K31/18
    • B60K15/03519Y10T137/0874Y10T137/3099
    • A fuel cut-off valve includes a case having a first opening communicated with the inside of a fuel tank and a second opening communicated with a canister; a lower float that is provided so as to move up and down inside the case and has a first valve member above the lower float; an upper float that is provided so as to move up and down above an upper portion of the lower float and has a second valve member and a third opening communicated with the canister; a first valve seat provided on the upper float, against which the first valve member abuts to close off the third opening; a second valve seat against which the second valve member abuts to close off the second opening; and a guide member that guides the upper float when the upper float moves up and down.
    • 燃料截止阀包括具有与燃料箱内部连通的第一开口的壳体和与罐连通的第二开口; 下浮体,其设置成在壳体内上下移动,并且在下浮体上方具有第一阀构件; 上浮体,其设置成在所述下浮体的上部上方上下移动,并具有与所述罐连通的第二阀构件和第三开口; 第一阀座,设置在上部浮子上,第一阀构件与第一阀座抵接以关闭第三开口; 第二阀座,所述第二阀构件与所述第二阀座邻接以关闭所述第二开口; 以及当上浮子上下移动时引导上浮子的引导构件。
    • 8. 发明授权
    • Illuminant substrate and manufacturing method thereof and image display apparatus
    • 照明基板及其制造方法以及图像显示装置
    • US07834534B2
    • 2010-11-16
    • US11953470
    • 2007-12-10
    • Hiroaki IbukiMasahiro YokotaMasaaki SuzukiKeiji Suzuki
    • Hiroaki IbukiMasahiro YokotaMasaaki SuzukiKeiji Suzuki
    • H01J1/62
    • H01J31/127H01J29/86H01J29/861
    • An illuminant substrate includes a substrate, first and second light emitting members provided on the substrate, a first anode covering the first light emitting member, a second anode covering the second light emitting member, a resistor located between the first and second light emitting members and electrically connecting the first and second anodes, and a rib laminated on the resistor. A side face of the resistor facing the first light emitting member projects toward the first light emitting member further than a side face of the rib facing the first light emitting member, and a side face of the resistor facing the second light emitting member projects toward the second light emitting member further than a side face of the rib facing the second light emitting member. In addition, the side faces of the resistor facing the first and second light emitting members are forward tapered faces, the side face of the rib is a reverse tapered face, and the first anode and the second anode are physically divided by the rib.
    • 发光体基板包括基板,设置在基板上的第一和第二发光部件,覆盖第一发光部件的第一阳极,覆盖第二发光部件的第二阳极,位于第一发光部件和第二发光部件之间的电阻器, 电连接第一和第二阳极,以及层压在电阻器上的肋。 面对第一发光部件的电阻器的侧面比面向第一发光部件的肋的侧面朝向第一发光部件突出,并且面对第二发光部件的电阻器的侧面朝向 第二发光部件比面向第二发光部件的肋的侧面更远。 此外,面对第一发光元件和第二发光元件的电阻器的侧面是前锥形面,肋的侧面是倒锥面,第一阳极和第二阳极由肋物理分开。
    • 10. 发明申请
    • APPARATUS AND PROCESS FOR GAS SENSOR CONTROL
    • 气体传感器控制的装置和方法
    • US20100108540A1
    • 2010-05-06
    • US12612979
    • 2009-11-05
    • Akiyoshi KatoKeiji Suzuki
    • Akiyoshi KatoKeiji Suzuki
    • G01F1/64G01N27/26
    • G01N27/4067
    • A gas sensor control apparatus includes a heater regulating section to control the supply of electricity to a heater included in a gas sensor, an impedance sensing section to sense an impedance of a cell of the gas sensor, and an impedance condition examining section to examine whether the sensed impedance is greater than or equal to a predetermined abnormality judging threshold. The control apparatus further includes a voltage condition examining section to examine whether a maximum effective voltage is applied to the heater, when the impedance is above the predetermined abnormality judging threshold, a duration measuring section to examine whether an application time duration of the maximum effective voltage becomes equal to or longer than a predetermined heater overheat preventing time, and a voltage decreasing section to decrease the heater application voltage to such a lower effective voltage as to hold the temperature of the cell higher than or equal to 500° C. when the application time duration reaches the predetermined heater overheat preventing time.
    • 气体传感器控制装置包括加热器调节部分,用于控制气体传感器中包括的加热器的电力供应,用于感测气体传感器的电池的阻抗的阻抗感测部分,以及阻抗条件检查部分,以检查是否 感测到的阻抗大于或等于预定的异常判定阈值。 所述控制装置还包括:电压条件检查部,其在所述阻抗高于所述规定的异常判定阈值时,检查是否对所述加热器施加最大有效电压;持续时间测量部,检查所述最大有效电压的施加持续时间 变得等于或长于预定的加热器过热防止时间;以及电压降低部,其将加热器施加电压降低到这样的较低有效电压,以将电池的温度保持在500℃以上,当应用 持续时间达到预定加热器过热防止时间。