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1. 发明授权

US07439114B2 Laser anneal method of a semiconductor layer 有权
标题翻译：半导体层的激光退火方法
公开(公告)号：US07439114B2
公开(公告)日：2008-10-21
申请号：US11207458
申请日：2005-08-18
申请人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
发明人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
摘要翻译：为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平激光束比区域前区域或中心区域低。该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体在退火过程的后半期间在最佳能级内退火的层。

2. 发明授权

US07061017B2 Laser anneal method of a semiconductor layer 有权
标题翻译：半导体层的激光退火方法
公开(公告)号：US07061017B2
公开(公告)日：2006-06-13
申请号：US10714829
申请日：2003-11-14
申请人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
发明人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
IPC分类号： H01L29/76
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
摘要翻译：为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平激光束比区域前区域或中心区域低。该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体在退火过程的后半期间在最佳能级内退火的层。

3. 发明授权

US06274414B1 Laser anneal method of a semiconductor layer 失效
标题翻译：半导体层的激光退火方法
公开(公告)号：US06274414B1
公开(公告)日：2001-08-14
申请号：US08911505
申请日：1997-08-14
申请人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
发明人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi Kuwahara
IPC分类号： H01L21324
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
摘要翻译：为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平激光束比区域前区域或中心区域低。该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体在退火过程的后半期间在最佳能级内退火的层。

4. 发明授权

US06426791B2 Method and apparatus for evaluating semiconductor film, and method for producing the semiconductor film 失效
标题翻译：用于评价半导体膜的方法和装置，以及半导体膜的制造方法
公开(公告)号：US06426791B2
公开(公告)日：2002-07-30
申请号：US09790915
申请日：2001-02-22
申请人： Kazuhiro Imao , Takashi Kuwahara , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Kazuhiro Imao , Takashi Kuwahara , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： G01N2155
CPC分类号： H01L22/24 , H01L22/12
摘要： Reflectance of a p-Si film crystallized by laser annealing is measured, a wave length dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wave length of 500 nm. The value is to be an inherent optical value under the laser power and relates to a grain size measured by Secco etching or the like. A number of correspondence between the optical value and the grain size are recorded and linearly plotted. By calculating the optical value from the reflectance in the p-Si film at in-line, the grain size is correspondingly determined. Thus, the semiconductor film can be in-line monitored, thereby improving a yield and saving a cost in producing a semiconductor device.
摘要翻译：测量通过激光退火结晶的p-Si膜的反射率，发现反射率的波长依赖性，并且计算一阶变化率以确定波长500nm附近的最小值。该值是在激光功率下的固有光学值，并且涉及通过Secco蚀刻等测量的晶粒尺寸。记录光学值和晶粒尺寸之间的一些对应关系并线性绘制。通过从线上p-Si膜的反射率计算光学值，相应地确定晶粒尺寸。因此，可以在线监测半导体膜，从而提高成品率并节省制造半导体器件的成本。

5. 发明授权

US06218198B1 Method and apparatus for evaluating semiconductor film, and method for producing the semiconductor film 失效
标题翻译：用于评价半导体膜的方法和装置，以及半导体膜的制造方法
公开(公告)号：US06218198B1
公开(公告)日：2001-04-17
申请号：US09032243
申请日：1998-02-27
申请人： Kazuhiro Imao , Takashi Kuwahara , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Kazuhiro Imao , Takashi Kuwahara , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L2100
CPC分类号： H01L22/24 , H01L22/12
摘要： Reflectance of a p-Si film crystallized by laser annealing is measured, a wavelength dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wavelength of 500 nm. The value is to be an inherent optical value under the laser power and relates to a grain size measured by Secco etching or the like. A number of correspondence between the optical value and the grain size are recorded and linearly plotted. By calculating the optical value from the reflectance in the p-Si film at in-line, the grain size is correspondingly determined. Thus, the semiconductor film can be in-line monitored, thereby improving a yield and saving a cost in producing a semiconductor device.
摘要翻译：测量通过激光退火结晶的p-Si膜的反射率，发现反射率的波长依赖性，并且计算一阶变化率以确定在500nm波长附近的最小值。该值是在激光功率下的固有光学值，并且涉及通过Secco蚀刻等测量的晶粒尺寸。记录光学值和晶粒尺寸之间的一些对应关系并线性绘制。通过从线上p-Si膜的反射率计算光学值，相应地确定晶粒尺寸。因此，可以在线监测半导体膜，从而提高成品率并节省制造半导体器件的成本。

6. 发明申请

US20110221292A1 FRICTION COUPLING DEVICE 审中-公开
标题翻译：摩擦联接装置
公开(公告)号：US20110221292A1
公开(公告)日：2011-09-15
申请号：US13130454
申请日：2009-11-25
申请人： Takashi Kuwahara , Shigeru Ishii
发明人： Takashi Kuwahara , Shigeru Ishii
IPC分类号： H02K7/108 , F16D25/0638
CPC分类号： F16D25/082 , F16D25/12 , F16D2048/0212 , F16D2300/06
摘要： In a friction coupling device, a restriction mechanism is further provided for restricting relative movement between a cylinder member and a drum member. The restriction mechanism is located on the cylinder-chamber side than friction plates in a pressing direction of a piston, and thus the friction coupling device can realize stable coupling operations without increasing the thickness of an outer wall or the like.
摘要翻译：在摩擦联接装置中，还设有限制机构，用于限制气缸构件和鼓构件之间的相对运动。限制机构在活塞的按压方向上位于气缸室侧而不是摩擦板，因此摩擦联接装置可以在不增加外壁等的厚度的情况下实现稳定的联接操作。

7. 发明授权

US07811094B2 Contact member and connector 有权
标题翻译：接触件和接头
公开(公告)号：US07811094B2
公开(公告)日：2010-10-12
申请号：US12256625
申请日：2008-10-23
申请人： Takashi Kuwahara , Seiya Takahashi , Hiroshi Akimoto
发明人： Takashi Kuwahara , Seiya Takahashi , Hiroshi Akimoto
IPC分类号： H01R12/00
CPC分类号： H01R13/2407 , H01R12/592
摘要： A contact member which is resistant to contact failure even if the environment of use is bad. A film is affixed to the surface of a long plate-shaped elastic body which is disposed between two to-be-connected objects. A electrically-conducting path which electrically connects between terminal portions of two to-be-connected objects is provided on the surface of the film. A first conductor contact portion which is capable of being brought into contact with the terminal portion of one of two to-be-connected objects is disposed at one end of the electrically-conducting path, and a second conductor contact portion which is capable of being brought into contact with the terminal portion of the other of two to-be-connected objects is disposed at the other end of the electrically-conducting path. A plurality of holes are formed in the first and second conductor contact portions.
摘要翻译：即使使用环境不良，也能够抵抗接触不良的接触部件。薄膜固定在长板状弹性体的表面上，该长板状弹性体设置在两个被连接物体之间。在膜的表面上设置导电路径，其电连接两个被连接物体的端子部分。能够与两个待连接物体之一的端子部分接触的第一导体接触部分设置在导电路径的一端，以及第二导体接触部分，其能够被与两个被连接物体中的另一个的端子部分接触设置在导电路径的另一端。多个孔形成在第一和第二导体接触部分中。

8. 发明申请

US20090191810A1 SATELLITE COMMUNICATION SYSTEM 有权
标题翻译：卫星通信系统
公开(公告)号：US20090191810A1
公开(公告)日：2009-07-30
申请号：US12301349
申请日：2007-05-15
申请人： Yasushi Sogabe , Akinori Fujimura , Takashi Kuwahara , Futaba Ejima
发明人： Yasushi Sogabe , Akinori Fujimura , Takashi Kuwahara , Futaba Ejima
IPC分类号： H04B7/185
CPC分类号： H04B7/18515 , H04B7/2045
摘要： When a transmission request for new data is issued under a situation where a plurality of data are transmitted to a specific service area from a plurality of service areas, a feeder link station searches an available frequency to be allocated to the new data in a down-link frequency band of the specific service area, and when any of data communications is completed, allocates a down-link frequency band used in the data communication as a down-link frequency band for the new data. A satellite repeater arranges the new data on the down-link frequency band right after the data communication is completed following a relay control by the feeder link station.
摘要翻译：当在多个服务区域将多个数据发送到特定服务区域的情况下发出新数据的发送请求时，馈线链路站以下行方式搜索要分配给新数据的可用频率，特定服务区域的链路频带，并且当数据通信中的任何一个完成时，将在数据通信中使用的下行链路频带分配为新数据的下行链路频带。卫星转发器在通过馈线链路站的继电器控制完成数据通信之后立即将新数据布置在下行链路频带上。

9. 发明授权

US06172820B2 Laser irradiation device 有权
标题翻译：激光照射装置
公开(公告)号：US06172820B2
公开(公告)日：2001-01-09
申请号：US09326173
申请日：1999-06-04
申请人： Takashi Kuwahara
发明人： Takashi Kuwahara
IPC分类号： G02B302
CPC分类号： G02B27/0966 , B23K26/066 , B23K26/0738 , G02B27/09 , G02B27/0905
摘要： A laser irradiation device generates a linear laser beam extending in one direction, which is irradiated toward the substrate 20 to be processed. The length Lh of the emitted linear laser beam in the major axis direction is adjusted in accordance with a size of the substrate 20 to be processed or the area to be processed within the substrate 20. The adjustment of the length Lh is performed by altering the distance X between a pair of cylindrical lenses 43 and 5 of the optical system for adjusting the generated laser beam in the direction corresponding to the length Lh direction of the linear laser beam, in accordance with the required length Lh. The alteration of the distance X is performed by altering the position of one of the cylindrical lenses 43 and 5 within the optical path in forward and backward direction. The lens is, for example, one having more flexibility of layout in the optical system than the other.
摘要翻译：激光照射装置产生沿着朝向被处理基板20照射的一个方向延伸的线性激光束。发射的线性激光束在长轴方向上的长度Lh根据要处理的基板20的尺寸或基板20内待处理的区域的大小进行调整。长度Lh的调整是通过改变根据需要的长度Lh，在与线性激光束的长度Lh方向对应的方向上调整所产生的激光束的光学系统的一对柱面透镜43和5之间的距离X。通过改变柱面透镜43和5中的一个柱面透镜43和5在光路中的前后方向的位置来进行距离X的改变。例如，透镜比光学系统中具有更大的布局灵活性的透镜。

10. 发明授权

US5100239A Method of manufacturing concrete 失效
标题翻译：制造混凝土的方法
公开(公告)号：US5100239A
公开(公告)日：1992-03-31
申请号：US636552
申请日：1990-06-29
申请人： Sadamu Ono , Sadao Goto , Koji Minegishi , Kenichi Oshita , Daisuke Ishikura , Yoshiaki Negami , Kazuya Kamezaki , Katsuhiko Kimura , Takashi Kuwahara , Yasuo Kajioka
发明人： Sadamu Ono , Sadao Goto , Koji Minegishi , Kenichi Oshita , Daisuke Ishikura , Yoshiaki Negami , Kazuya Kamezaki , Katsuhiko Kimura , Takashi Kuwahara , Yasuo Kajioka
IPC分类号： B28C5/46
CPC分类号： B28C5/468
摘要： Method for manufacturing concrete by mixing concrete materials including a cement, aggregate, admixture and at least one of water and ice. The aggregate is moved prior the mixing and a low-temperature liquid is sprayed on the aggregate for cooling while the aggregate is being moved.

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