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1. 发明申请

US20080055492A1 Liquid crystal display element and projection type liquid crystal display device 失效
标题翻译：液晶显示元件和投影型液晶显示装置
公开(公告)号：US20080055492A1
公开(公告)日：2008-03-06
申请号：US11895342
申请日：2007-08-24
申请人： Hidenobu Kuroi , Akiko Toriyama , Yasuhiro Shirasaka , Hisashi Kadota , Hirohide Fukumoto , Hajime Tsuchiya , Jun Takahama
发明人： Hidenobu Kuroi , Akiko Toriyama , Yasuhiro Shirasaka , Hisashi Kadota , Hirohide Fukumoto , Hajime Tsuchiya , Jun Takahama
IPC分类号： G02F1/1337 , G02F1/1335
CPC分类号： G02F1/1393 , G02F2001/133742 , G02F2001/13712
摘要： Disclosed herein is a liquid crystal display element in which a liquid crystal layer is interposed between a pair of substrates laminated to each other by a sealing material such that alignment films are opposed to each other with a predetermined gap between the alignment films, wherein a range of dielectric anisotropy Δ∈ of a material for the liquid crystal layer at a measured temperature of 70° C. is −4.5 to less than zero.
摘要翻译：本发明公开了一种液晶显示元件，其中液晶层插入在通过密封材料彼此层叠的一对基板之间，使得取向膜在取向膜之间以预定的间隙彼此相对，其中范围介电各向异性在70℃的测量温度下液晶层的材料的Δε为-4.5至小于零。

2. 发明授权

US08212985B2 Liquid crystal display element and projection type liquid crystal display device 失效
标题翻译：液晶显示元件和投影型液晶显示装置
公开(公告)号：US08212985B2
公开(公告)日：2012-07-03
申请号：US11895342
申请日：2007-08-24
申请人： Hidenobu Kuroi , Akiko Toriyama , Yasuhiro Shirasaka , Hisashi Kadota , Hajime Tsuchiya , Jun Takahama
发明人： Hidenobu Kuroi , Akiko Toriyama , Yasuhiro Shirasaka , Hisashi Kadota , Hajime Tsuchiya , Jun Takahama
IPC分类号： C09K19/02 , G02F1/1335 , G02F1/1337
CPC分类号： G02F1/1393 , G02F2001/133742 , G02F2001/13712
摘要： Disclosed herein is a liquid crystal display element in which a liquid crystal layer is interposed between a pair of substrates laminated to each other by a sealing material such that alignment films are opposed to each other with a predetermined gap between the alignment films, wherein a range of dielectric anisotropy Δε of a material for the liquid crystal layer at a measured temperature of 70° C. is −4.5 to less than zero.
摘要翻译：本发明公开了一种液晶显示元件，其中液晶层插入在通过密封材料彼此层叠的一对基板之间，使得取向膜在取向膜之间以预定的间隙彼此相对，其中范围介电各向异性＆在测量温度为70℃的液晶层的材料为-4.5至小于零。

3. 发明申请

US20110090104A1 DIGITAL CONVERTER FOR PROCESSING RESOLVER SIGNAL 有权
标题翻译：用于处理分辨率信号的数字转换器
公开(公告)号：US20110090104A1
公开(公告)日：2011-04-21
申请号：US12873587
申请日：2010-09-01
申请人： Kuniaki Sata , Makoto Shinohara , Eiji Sato , Hajime Tsuchiya
发明人： Kuniaki Sata , Makoto Shinohara , Eiji Sato , Hajime Tsuchiya
IPC分类号： H03M1/48
CPC分类号： H03M1/485
摘要： According to one embodiment, a digital converter is provided to process output signals of a resolver attached to a rotating apparatus. These output signals are converted into digital signals by ΔΣ AD converters. Multiplication units receive the digital signals outputted from the ΔΣ AD converters. A subtraction unit subtracts the outputs of the multiplication units. A synchronous detection unit detects the output of the subtraction unit based on a synchronization signal synchronously. An angular velocity calculation unit adjusts a proportional gain of an output of the synchronous detection unit, compensates the phase thereof, and calculates the angular velocity of the rotating apparatus. A rotational angle calculation unit calculates a rotational angle by integrating the angular velocity. Cosine and sine output units output a cosine and a sine corresponding to the obtained rotational angle to the multiplication units, respectively.
摘要翻译：根据一个实施例，提供数字转换器来处理附接到旋转装置的旋转变压器的输出信号。这些输出信号通过＆Dgr＆Sgr转换成数字信号。 AD转换器。乘法单元接收从＆Dgr＆amp; Sgr输出的数字信号; AD转换器。减法单元减去乘法单元的输出。同步检测单元同步地基于同步信号检测减法单元的输出。角速度计算单元调整同步检测单元的输出的比例增益，补偿其相位，并计算旋转装置的角速度。旋转角度计算单元通过对角速度进行积分来计算旋转角度。余弦和正弦输出单元分别将相应于所获得的旋转角度的余弦和正弦输出到乘法单元。

4. 发明授权

US07399715B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device 有权
标题翻译：有机二氧化硅基膜，其形成方法，用于形成半导体器件绝缘膜的组合物，互连结构和半导体器件
公开(公告)号：US07399715B2
公开(公告)日：2008-07-15
申请号：US11176622
申请日：2005-07-08
申请人： Hajime Tsuchiya , Hiromi Egawa , Terukazu Kokubo , Atsushi Shiota
发明人： Hajime Tsuchiya , Hiromi Egawa , Terukazu Kokubo , Atsushi Shiota
IPC分类号： H01L21/31
CPC分类号： H01L21/3122 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02348 , Y10T428/31663
摘要： A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R1Si(OR2)3, (2): Si(OR3)4, (3): (R4)2Si(OR5)2, and (4): R6b(R7O)3-bSi—(R10)d—Si(OR8)3-cR9c.
摘要翻译：一种形成有机二氧化硅基膜的方法，包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并对涂层施加热和紫外线辐射以进行固化处理，其中所述组合物包含碳含量为11.8至16.7mol％的有机硅溶胶和有机溶剂，所述有机二氧化硅溶胶为水解缩合产物，其由选自通式（1）所示的化合物的硅烷化合物的水解和缩合：R 1 Si（OR 2）3，（ 2）：Si（OR 3）4，（3）：（R 4）2 Si（或（4）：R 6 B 7（R 7） O）3-b Si-（R 10）n -Si（OR 8）3 -c 9

5. 发明授权

US08188896B2 Digital converter for processing resolver signal 有权
标题翻译：用于处理旋转变压器信号的数字转换器
公开(公告)号：US08188896B2
公开(公告)日：2012-05-29
申请号：US12873587
申请日：2010-09-01
申请人： Kuniaki Sata , Makoto Shinohara , Eiji Sato , Hajime Tsuchiya
发明人： Kuniaki Sata , Makoto Shinohara , Eiji Sato , Hajime Tsuchiya
IPC分类号： H03M1/48
CPC分类号： H03M1/485
摘要： According to one embodiment, a digital converter is provided to process output signals of a resolver attached to a rotating apparatus. These output signals are converted into digital signals by ΔΣ AD converters. Multiplication units receive the digital signals outputted from the ΔΣ AD converters. A subtraction unit subtracts the outputs of the multiplication units. A synchronous detection unit detects the output of the subtraction unit based on a synchronization signal synchronously. An angular velocity calculation unit adjusts a proportional gain of an output of the synchronous detection unit, compensates the phase thereof, and calculates the angular velocity of the rotating apparatus. A rotational angle calculation unit calculates a rotational angle by integrating the angular velocity. Cosine and sine output units output a cosine and a sine corresponding to the obtained rotational angle to the multiplication units, respectively.
摘要翻译：根据一个实施例，提供数字转换器来处理附接到旋转装置的旋转变压器的输出信号。这些输出信号通过＆Dgr＆Sgr转换成数字信号。 AD转换器。乘法单元接收从＆Dgr＆amp; Sgr输出的数字信号; AD转换器。减法单元减去乘法单元的输出。同步检测单元同步地基于同步信号检测减法单元的输出。角速度计算单元调整同步检测单元的输出的比例增益，补偿其相位，并计算旋转装置的角速度。旋转角度计算单元通过对角速度进行积分来计算旋转角度。余弦和正弦输出单元分别将相应于所获得的旋转角度的余弦和正弦输出到乘法单元。

6. 发明授权

US6103302A Method for modification of surface of pressure-sensitive adhesive with functional group 有权
标题翻译：用官能团改性粘合剂表面的方法
公开(公告)号：US6103302A
公开(公告)日：2000-08-15
申请号：US194183
申请日：1998-11-24
申请人： Yoshihiro Minamizaki , Hajime Tsuchiya , Yasuhiro Umemoto , Toshiyasu Okui
发明人： Yoshihiro Minamizaki , Hajime Tsuchiya , Yasuhiro Umemoto , Toshiyasu Okui
IPC分类号： C09J7/00 , C08G85/00 , C08J7/12 , C08L7/00 , C09J5/00 , C09J7/02 , C09J201/00 , B05D5/10
CPC分类号： C08J7/12 , Y10T428/28
摘要： A modification method of functional group on the surface of a pressure-sensitive adhesive by fixing a functional group to the surface of the pressure-sensitive adhesive by an interfacial contact reaction between the pressure-sensitive adhesive phase and the phase containing a functional group-containing compound.By the modification method, a functional group effective for the improvement and control of an adhesive property can stably be introduced at high density to the surface of the pressure-sensitive adhesive.
摘要翻译： PCT No.PCT / JP97 / 01796 Sec。 371日期：1998年11月24日 102（e）1998年11月24日PCT PCT 1997年5月27日PCT公布。 WO97 / 45501 PCT出版物日期1997年12月4日利用压敏粘合剂相和含有相的粘合相之间的界面接触反应将官能团固定在压敏粘合剂的表面上的粘合剂表面上的官能团的改性方法含官能团的化合物。通过改性方法，可以稳定地以高密度将压敏粘合剂表面的粘合性改善和控制有效的官能团引入。

7. 发明申请

US20060024980A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device 有权
标题翻译：二氧化硅膜，其形成方法，用于形成用于半导体器件的绝缘膜的组合物，互连结构和半导体器件
公开(公告)号：US20060024980A1
公开(公告)日：2006-02-02
申请号：US11184964
申请日：2005-07-20
申请人： Hajime Tsuchiya , Seitaro Hattori , Masahiro Akiyama , Atsushi Shiota
发明人： Hajime Tsuchiya , Seitaro Hattori , Masahiro Akiyama , Atsushi Shiota
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C09D183/10 , G03F7/0757 , H01L21/02348 , H01L21/3121 , H01L21/316
摘要： A method of forming a silica-based film includes: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment. The composition includes: a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and an organic solvent,
摘要翻译：形成二氧化硅基膜的方法包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并向涂层施加热和紫外线辐射以进行固化处理。该组合物包括：通过水解和缩合选自由以下通式（A）表示的化合物组成的组中的至少一种硅烷化合物和至少一种选自化合物的硅烷化合物产生的水解缩合产物由以下通式（B）表示的化合物和由以下通式（C）表示的化合物：和有机溶剂，

8. 发明申请

US20060006541A1 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device 有权
标题翻译：有机二氧化硅基膜，其形成方法，用于形成半导体器件绝缘膜的组合物，互连结构和半导体器件
公开(公告)号：US20060006541A1
公开(公告)日：2006-01-12
申请号：US11176622
申请日：2005-07-08
申请人： Hajime Tsuchiya , Hiromi Egawa , Terukazu Kokubo , Atsushi Shiota
发明人： Hajime Tsuchiya , Hiromi Egawa , Terukazu Kokubo , Atsushi Shiota
IPC分类号： H01B3/20 , H01L23/48 , H01L21/31
CPC分类号： H01L21/3122 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02348 , Y10T428/31663
摘要： A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R1Si(OR2)3, (2): Si(OR3)4, (3): (R4)2Si(OR5)2, and (4): R6b(R7O)3-bSi—(R10)d—Si(OR8)3-cR9c.
摘要翻译：一种形成有机二氧化硅基膜的方法，包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并对涂层施加热和紫外线辐射以进行固化处理，其中所述组合物包含碳含量为11.8至16.7mol％的有机硅溶胶和有机溶剂，所述有机二氧化硅溶胶为水解缩合产物，其由选自通式（1）所示的化合物的硅烷化合物的水解和缩合：R 1 Si（OR 2）3，（ 2）：Si（OR 3）4，（3）：（R 4）2 Si（或（4）：R 6 B 7（R 7） O）3-b Si-（R 10）n -Si（OR 8）3 -c 9

9. 发明授权

US07932295B2 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device 有权
标题翻译：有机二氧化硅基膜，其形成方法，用于形成半导体器件绝缘膜的组合物，互连结构和半导体器件
公开(公告)号：US07932295B2
公开(公告)日：2011-04-26
申请号：US12135594
申请日：2008-06-09
申请人： Hajime Tsuchiya , Hiromi Egawa , Terukazu Kokubo , Atsushi Shiota
发明人： Hajime Tsuchiya , Hiromi Egawa , Terukazu Kokubo , Atsushi Shiota
IPC分类号： C01B33/155 , C09K3/00 , H01L23/535 , H01L23/538
CPC分类号： H01L21/3122 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02348 , Y10T428/31663
摘要： A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment, wherein the composition includes organic silica sol having a carbon content of 11.8 to 16.7 mol %, and an organic solvent, the organic silica sol being a hydrolysis-condensation product produced by hydrolysis and condensation of a silane compound selected from compounds shown by the general formulae (1): R1Si(OR2)3, (2): Si(OR3)4, (3): (R4)2Si(OR5)2, and (4): R6b(R7O)3-bSi—(R10)d—Si(OR8)3-cR9c.
摘要翻译：一种形成有机二氧化硅基膜的方法，包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并对涂层施加热和紫外线辐射以进行固化处理，其中所述组合物包含碳含量为11.8至16.7mol％的有机硅溶胶和有机溶剂，所述有机二氧化硅溶胶为水解缩合产物，其由硅烷化合物的水解和缩合选自通式（1）所示的化合物：R1Si（OR2）3，（2）：Si（OR3）4，（3）：（R4）2Si（OR5）2和（ 4）：R6b（R7O）3-bSi-（R10）d-Si（OR8）3-cR9c。

10. 发明授权

US07291567B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device 有权
标题翻译：二氧化硅膜，其形成方法，用于形成用于半导体器件的绝缘膜的组合物，互连结构和半导体器件
公开(公告)号：US07291567B2
公开(公告)日：2007-11-06
申请号：US11184964
申请日：2005-07-20
申请人： Hajime Tsuchiya , Seitaro Hattori , Masahiro Akiyama , Atsushi Shiota
发明人： Hajime Tsuchiya , Seitaro Hattori , Masahiro Akiyama , Atsushi Shiota
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C09D183/10 , G03F7/0757 , H01L21/02348 , H01L21/3121 , H01L21/316
摘要： A method of forming a silica-based film includes:applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment. The composition includes: a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and an organic solvent,
摘要翻译：形成二氧化硅基膜的方法包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并向涂层施加热和紫外线辐射以进行固化处理。该组合物包括：通过水解和缩合选自由以下通式（A）表示的化合物组成的组中的至少一种硅烷化合物和至少一种选自化合物的硅烷化合物产生的水解缩合产物由以下通式（B）表示的化合物和由以下通式（C）表示的化合物：和有机溶剂，

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