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    • 1. 发明申请
    • INSULATED GATE BIPOLAR TRANSISTOR WITH BUILT-IN FREEWHEELING DIODE
    • 具有内置自由二极管的绝缘栅双极晶体管
    • US20080258172A1
    • 2008-10-23
    • US12099599
    • 2008-04-08
    • Hideki TAKAHASHIShinji Aono
    • Hideki TAKAHASHIShinji Aono
    • H01L29/739
    • H01L29/66333H01L29/0696H01L29/0834H01L29/7395
    • An insulated gate bipolar transistor includes a first main electrode on a first main surface and in contact with a base region of an insulated gate transistor at the first main surface, a first semiconductor layer of a first conductivity type on a second main surface, a second semiconductor layer of a second conductivity type on the second main surface and vertically aligned with a region of the first main electrode in contact with the base region, and a second main electrode formed on the first and second semiconductor layers. An interface between the second main electrode and each of the first and second semiconductor layers is parallel to the first main surface, a distance between the first main surface and the interface is equal to 200 μm or smaller, and a thickness of each of the first and second semiconductor layers is equal to 2 μm or smaller.
    • 绝缘栅双极晶体管包括在第一主表面上并与第一主表面上的绝缘栅晶体管的基极区接触的第一主电极,在第二主表面上具有第一导电类型的第一半导体层,第二主表面上的第二导电类型的第二半导体层, 在第二主表面上具有第二导电类型的半导体层,并且与第一主电极的与基极区域接触的区域垂直对准,以及形成在第一和第二半导体层上的第二主电极。 第二主电极和第一和第二半导体层中的每一个之间的界面平行于第一主表面,第一主表面和界面之间的距离等于200μm或更小,并且第一主表面 第二半导体层等于2μm或更小。
    • 4. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20070108468A1
    • 2007-05-17
    • US11463502
    • 2006-08-09
    • Hideki TAKAHASHI
    • Hideki TAKAHASHI
    • H01L29/74
    • H01L29/7397H01L29/0696H01L29/0834H01L29/32H01L29/66348
    • A semiconductor device, including: a semiconductor substrate of a first conductivity type having a first and second major surfaces; a first conductivity type semiconductor layer formed on the first major surface of the semiconductor substrate; a base layer of a second conductivity type formed on the first major surface of the semiconductor layer and separated by the semiconductor layer from the semiconductor substrate; a pair of groove portions penetrating the base layer from the first major surface and reaching at least the semiconductor layer; an insulation film disposed inside the groove portion and a gate electrode formed inside the groove portion through the insulation film; a first conductivity type semiconductor layer and a second conductivity type semiconductor layer formed on the second major surface of the semiconductor substrate; and an emitter region disposed on the first major surface of the base layer and along the groove portions, wherein a transistor controlling a current flowing in the base layer by the gate electrode and a diode made of the semiconductor layer and the base layer are disposed within the semiconductor device, and the emitter region is disposed only in an area which is between the pair of groove portions.
    • 一种半导体器件,包括:具有第一和第二主表面的第一导电类型的半导体衬底; 形成在半导体衬底的第一主表面上的第一导电类型半导体层; 形成在半导体层的第一主表面上并由半导体层与半导体衬底隔开的第二导电类型的基极层; 从所述第一主表面穿透所述基底层并且至少达到所述半导体层的一对沟槽部; 设置在所述槽部内的绝缘膜和通过所述绝缘膜形成在所述槽部内的栅电极; 形成在半导体衬底的第二主表面上的第一导电类型半导体层和第二导电类型半导体层; 以及发射极区域,其设置在所述基底层的所述第一主表面上并且沿着所述沟槽部分,其中,控制由所述栅电极在所述基极层中流动的电流的晶体管和由所述半导体层和所述基极层制成的二极管设置在 半导体器件和发射极区域仅设置在一对槽部之间的区域中。
    • 6. 发明申请
    • RECEIVER, SIGNAL PROCESSING METHOD AND PROGRAM
    • 接收器,信号处理方法和程序
    • US20110007782A1
    • 2011-01-13
    • US12816707
    • 2010-06-16
    • Hideki TAKAHASHIKatsuyuki Tanaka
    • Hideki TAKAHASHIKatsuyuki Tanaka
    • H04B1/707
    • G01S19/30H04B1/7075H04B2201/70715
    • A receiver includes a receiving unit that receives a signal from a satellite, a frequency conversion-discretization unit that converts the signal received in the receiving unit into an intermediate frequency signal of a frequency bandwidth including 0 Hz, and discretizes the frequency-converted intermediate frequency signal with a predetermined sampling frequency, a filter unit that filters the discretized signal, which is output from the frequency conversion-discretization unit, through a predetermined filter, a synchronization acquisition unit that acquires synchronization of a spreading code in the discretized signal filtered by the filter unit, and a synchronization holding unit that holds the synchronization of the spreading code, which is acquired by the synchronization acquisition unit.
    • 接收机包括从卫星接收信号的接收单元,将接收单元中接收的信号转换为包括0Hz的频率带宽的中频信号的频率转换离散化单元,并将频率转换后的中频离散化 具有预定采样频率的信号;滤波器单元,其通过预定滤波器对从变频离散化单元输出的离散化信号进行滤波;同步获取单元,其获取由所述滤波器滤波后的离散化信号中的扩展码的同步; 滤波器单元和同步保持单元,其保持由同步获取单元获取的扩展码的同步。
    • 10. 发明申请
    • COMMUNICATION DEVICE, NOISE REMOVING METHOD, AND PROGRAM
    • 通信设备,噪声消除方法和程序
    • US20090257471A1
    • 2009-10-15
    • US12392596
    • 2009-02-25
    • Katsuyuki TANAKAHideki TAKAHASHI
    • Katsuyuki TANAKAHideki TAKAHASHI
    • H04B1/69
    • H04B1/7097G01S19/13G01S19/21H04B1/1036H04B1/707H04B1/7101H04B2201/70715
    • A communication device according to an embodiment of the present invention includes a communication antenna that receives a transmission signal where a spectrum spread signal subjected to a spectrum spread is modulated; an intermediate frequency converting unit that converts the transmission signal received by the communication antenna into an intermediate frequency signal having a predetermined frequency; an analog to digital converting unit that discretizes the intermediate frequency signal and outputs a discretization signal; a noise removing unit that detects a noise other than a normal thermal noise included in the discretization signal and removes the detected noise from the discretization signal; and a demodulating unit that demodulates the spectrum spread signal, based on the discretization signal that is output from the noise removing unit.
    • 根据本发明实施例的通信设备包括:通信天线,其接收经过频谱扩展的频谱扩展信号被调制的发送信号; 中频变换单元,其将由通信天线接收的发送信号转换为具有预定频率的中频信号; 模数转换单元,其离散中频信号并输出​​离散化信号; 噪声去除单元,其检测离散化信号中包括的正常热噪声以外的噪声,并从所述离散化信号中去除检测到的噪声; 以及解调单元,其基于从噪声去除单元输出的离散化信号来解调频谱扩展信号。