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1. 发明申请

US20090057646A1 OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光学半导体器件及其制造方法
公开(公告)号：US20090057646A1
公开(公告)日：2009-03-05
申请号：US12055949
申请日：2008-03-26
申请人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
发明人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
IPC分类号： H01L33/00 , H01L21/205
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/12
摘要： Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH3 pulsed supply AlN growth method.
摘要翻译：由于蓝宝石衬底和III-V族化合物半导体之间的晶格失配很大，所以晶体难以生长。蓝宝石衬底上的高质量的AlN缓冲生长结构A包括蓝宝石（0001）衬底1，形成在蓝宝石衬底1上的AlN成核层3，形成在AlN成核层3上的脉冲供应的AlN层5和在脉冲供给的AlN层5上形成的连续生长AlN层7.在连续生长AlN层7上形成至少一组脉冲供给的AlN层11和连续生长AlN层15.将AlN层3生长在初始成核模式是通过使用NH 3脉冲供给方法的第一生长模式。脉冲供电的AlN层5是通过使用NH 3脉冲供给形成的，该低生长模式是增加晶粒尺寸并减少位错的第二生长模式，因此能够减少位错并掩埋成核层3.连续生长AlN 层7是快速的垂直生长模式，其提高平坦度并抑制裂纹发生。作为层的厚度的例子; 脉冲供给的AlN层5,11为0.3μm，连续生长AlN层7,15的厚度例如为1μm。生长层的条件的特征如下。 AlN层3在低V-III比（低N）的高温高压下生长。脉冲供给的AlN层5在V-III比高（N以下）的低温低压下生长。连续的AlN层7在不使用NH 3脉冲供给AlN生长方法的情况下，在高V-III比（Al浓度低于N）的高温高压下生长。

2. 发明授权

US07888154B2 Optical semiconductor device and manufacturing method therefor 有权
标题翻译：光半导体器件及其制造方法
公开(公告)号：US07888154B2
公开(公告)日：2011-02-15
申请号：US12704135
申请日：2010-02-11
申请人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
发明人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/16
摘要： To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH3-rich condition. The TMAl pulsed supply sequence includes growing an AlGaN layer for 10 seconds, interrupting the growth for 5 seconds to remove NH3, and then introducing TMAl at a flow rate of 1 sccm for 5 seconds. After that, the growth is interrupted again for 5 seconds. Defining this sequence as one growth cycle, five growth cycles are carried out. By such growth, an AlGaN layer having a polarity of richness in Al can be obtained. The above sequence is described only for illustrative purposes, and various variations are possible. In general, the Al polarity can be achieved by a process of repeating both growth interruption and supply of an Al source.
摘要翻译：提供用于改善由由AlGaInN基材料，特别是AlGaN基材料制成的发光层的深紫外光的发射强度的元素技术。首先，在蓝宝石表面上生长AlN层。 AlN层在富含NH 3的条件下生长。 TMA1脉冲供电序列包括生长AlGaN层10秒钟，中断生长5秒以除去NH 3，然后以1sccm的流速引入TMA1 5秒。之后，再次中断5秒钟。将该序列定义为一个生长周期，进行五个生长周期。通过这样的生长，可以获得具有Al浓度极性的AlGaN层。上述序列仅用于说明的目的，并且各种变化是可能的。通常，Al极性可以通过重复Al源的生长中断和供应的过程来实现。

3. 发明申请

US20090057688A1 OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：光学半导体器件及其制造方法
公开(公告)号：US20090057688A1
公开(公告)日：2009-03-05
申请号：US12055977
申请日：2008-03-26
申请人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
发明人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/16
摘要： To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH3-rich condition. The TMAl pulsed supply sequence includes growing an AlGaN layer for 10 seconds, interrupting the growth for 5 seconds to remove NH3, and then introducing TMAl at a flow rate of 1 sccm for 5 seconds. After that, the growth is interrupted again for 5 seconds. Defining this sequence as one growth cycle, five growth cycles are carried out. By such growth, an AlGaN layer having a polarity of richness in Al can be obtained. The above sequence is described only for illustrative purposes, and various variations are possible. In general, the Al polarity can be achieved by a process of repeating both growth interruption and supply of an Al source.
摘要翻译：提供用于改善由由AlGaInN基材料，特别是AlGaN基材料制成的发光层的深紫外光的发射强度的元素技术。首先，在蓝宝石表面上生长AlN层。 AlN层在富含NH 3的条件下生长。 TMA1脉冲供电序列包括生长AlGaN层10秒钟，中断生长5秒以除去NH 3，然后以1sccm的流速引入TMA1 5秒。之后，再次中断5秒钟。将该序列定义为一个生长周期，进行五个生长周期。通过这样的生长，可以获得具有Al浓度极性的AlGaN层。上述序列仅用于说明的目的，并且各种变化是可能的。通常，Al极性可以通过重复Al源的生长中断和供应的过程来实现。

4. 发明申请

US20100144078A1 OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：光学半导体器件及其制造方法
公开(公告)号：US20100144078A1
公开(公告)日：2010-06-10
申请号：US12704135
申请日：2010-02-11
申请人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
发明人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/16
摘要： To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH3-rich condition. The TMAl pulsed supply sequence includes growing an AlGaN layer for 10 seconds, interrupting the growth for 5 seconds to remove NH3, and then introducing TMAl at a flow rate of 1 sccm for 5 seconds. After that, the growth is interrupted again for 5 seconds. Defining this sequence as one growth cycle, five growth cycles are carried out. By such growth, an AlGaN layer having a polarity of richness in Al can be obtained. The above sequence is described only for illustrative purposes, and various variations are possible. In general, the Al polarity can be achieved by a process of repeating both growth interruption and supply of an Al source.
摘要翻译：提供用于改善由由AlGaInN基材料，特别是AlGaN基材料制成的发光层的深紫外光的发射强度的元素技术。首先，在蓝宝石表面上生长AlN层。 AlN层在富含NH 3的条件下生长。 TMA1脉冲供电序列包括生长AlGaN层10秒钟，中断生长5秒以除去NH 3，然后以1sccm的流速引入TMA1 5秒。之后，再次中断5秒钟。将该序列定义为一个生长周期，进行五个生长周期。通过这样的生长，可以获得具有Al浓度极性的AlGaN层。上述序列仅用于说明的目的，并且各种变化是可能的。通常，Al极性可以通过重复Al源的生长中断和供应的过程来实现。

5. 发明授权

US07811847B2 Optical semiconductor device and method for manufacturing the same 有权
标题翻译：光半导体装置及其制造方法
公开(公告)号：US07811847B2
公开(公告)日：2010-10-12
申请号：US12055949
申请日：2008-03-26
申请人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
发明人： Hideki Hirayama , Tomoaki Ohashi , Norihiko Kamata
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/12
摘要： Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH3 pulsed supply AlN growth method.
摘要翻译：由于蓝宝石衬底和III-V族化合物半导体之间的晶格失配很大，所以晶体难以生长。蓝宝石衬底上的高品质AlN缓冲生长结构A包括蓝宝石（0001）衬底1，形成在蓝宝石衬底1上的AlN成核层3，形成在AlN成核层3上的脉冲供应AlN层5和在脉冲供给的AlN层5上形成的连续生长AlN层7.在连续生长AlN层7上形成至少一组脉冲供给的AlN层11和连续生长AlN层15.将AlN层3生长在初始成核模式是通过使用NH 3脉冲供给方法的第一生长模式。脉冲供电的AlN层5是通过使用NH 3脉冲供给形成的，该低生长模式是增加晶粒尺寸并减少位错的第二生长模式，因此能够减少位错并掩埋成核层3.连续生长AlN 层7是快速的垂直生长模式，其提高平坦度并抑制裂纹发生。作为层的厚度的例子; 脉冲供给的AlN层5,11的厚度为0.3μm，连续生长AlN层7,15的厚度例如为1μm。生长层的条件的特征如下。 AlN层3在低V-III比（低N）的高温高压下生长。脉冲供给的AlN层5在V-III比高（N以下）的低温低压下生长。连续的AlN层7在不使用NH 3脉冲供给AlN生长方法的情况下，在高V-III比（Al浓度低于N）的高温高压下生长。

6. 发明申请

US20100012190A1 NANOWIRE PHOTOVOLTAIC CELLS AND MANUFACTURE METHOD THEREOF 审中-公开
标题翻译：纳米光伏电池及其制造方法
公开(公告)号：US20100012190A1
公开(公告)日：2010-01-21
申请号：US12503109
申请日：2009-07-15
申请人： Hajime GOTO , Tomoaki Ohashi , Junichi Motohisa , Takashi Fukui
发明人： Hajime GOTO , Tomoaki Ohashi , Junichi Motohisa , Takashi Fukui
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/03529 , Y02E10/547 , Y02P70/521
摘要： Provided is a nanowire photovoltaic cell (1) including a semiconductor substrate (2) and a plurality of nanowire semiconductors (4) and (5) having a PN junction. The semiconductor substrate (2) and the nanowire semiconductors (4) and (5) are composed of one single crystal. The manufacture method of the nanowire photovoltaic cell includes a step of coating a part of a surface of the semiconductor substrate (2) with an amorphous film (3), and a step of developing a crystal of a material identical to that of the semiconductor substrate (2) through epitaxial growth on the uncoated surface of the semiconductor substrate (2) to form the plurality of nanowire semiconductors (4) and (5).
摘要翻译：提供了包括半导体衬底（2）和具有PN结的多个纳米线半导体（4）和（5）的纳米线光伏电池（1）。半导体衬底（2）和纳米线半导体（4）和（5）由一个单晶构成。纳米线光伏电池的制造方法包括用非晶质膜（3）涂覆半导体衬底（2）的一部分表面的步骤，以及与半导体衬底的材料相同的晶体的显影步骤（2）通过在半导体衬底（2）的未涂覆表面上外延生长以形成多个纳米线半导体（4）和（5）。

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