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1. 发明申请

US20070102711A1 LED HAVING A REFLECTOR LAYER OF IMPROVED CONTACT OHMICITY AND METHOD OF FABRICATION 有权
标题翻译： LED具有改进的联系人的反射层和制造方法
公开(公告)号：US20070102711A1
公开(公告)日：2007-05-10
申请号：US11619079
申请日：2007-01-02
申请人： Hidekazu Aoyagi , Koji Otsuka
发明人： Hidekazu Aoyagi , Koji Otsuka
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： An LED has a light-generating semiconductor region formed on a baseplate via an electroconductive reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types for generating light. For good ohmic contact with the light-generating semiconductor region without any substantive diminution of reflectivity compared to that of unalloyed silver, the reflector layer is made from a silver-base alloy containing a major proportion of silver and at least either one of copper, gold, palladium, neodymium, silicon, iridium, nickel, tungsten, zinc, gallium, titanium, magnesium, yttrium, indium, and tin.
摘要翻译： LED具有通过导电反射层在基板上形成的发光半导体区域。光产生半导体区域具有夹在一对相反导电类型的包层之间的活性层，用于产生光。为了与发光半导体区域良好的欧姆接触，与非合金银相比，反射率没有任何明显的降低，反射层由含有主要比例的银和至少一种铜，金的银基合金制成，钯，钕，硅，铱，镍，钨，锌，镓，钛，镁，钇，铟和锡。

2. 发明申请

US20060275937A1 Method of fabricating light-emitting semiconductor device 审中-公开
标题翻译：制造发光半导体器件的方法
公开(公告)号：US20060275937A1
公开(公告)日：2006-12-07
申请号：US11502642
申请日：2006-08-11
申请人： Hidekazu Aoyagi , Koji Otsuka , Masahiro Sato
发明人： Hidekazu Aoyagi , Koji Otsuka , Masahiro Sato
IPC分类号： H01L21/00
CPC分类号： H01L33/14 , H01L33/007 , H01L33/04
摘要： A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.
摘要翻译：具有硅衬底的发光二极管，其上依次形成缓冲层，p型氮化物半导体层，有源层，n型氮化物半导体层和电流扩展层。电流扩展层是交替需要次数布置的第一和第二子层的叠层。由不同的化合物半导体组成，电流扩展层的交替子层产生用于提供二维气体效应的异质结。电流扩散层在平行于其从其发射光的主表面的方向上的电阻率如此低，使得电流有利地扩散在其中以提高发光效率。金属焊盘形式的前电极以电流扩散层的主表面中心地安装在其与其电阻接触的位置。

3. 发明授权

US07675070B2 LED having a reflector layer of improved contact ohmicity 有权
标题翻译： LED具有改善的接触欧姆度的反射层
公开(公告)号：US07675070B2
公开(公告)日：2010-03-09
申请号：US11619079
申请日：2007-01-02
申请人： Hidekazu Aoyagi , Koji Otsuka
发明人： Hidekazu Aoyagi , Koji Otsuka
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/405 , H01L33/0079
摘要： An LED has a light-generating semiconductor region formed on a baseplate via an electroconductive reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types for generating light. For good ohmic contact with the light-generating semiconductor region without any substantive diminution of reflectivity compared to that of unalloyed silver, the reflector layer is made from a silver-base alloy containing a major proportion of silver and at least either one of copper, gold, palladium, neodymium, silicon, iridium, nickel, tungsten, zinc, gallium, titanium, magnesium, yttrium, indium, and tin.
摘要翻译： LED具有通过导电反射层在基板上形成的发光半导体区域。光产生半导体区域具有夹在一对相反导电类型的包层之间的活性层，用于产生光。为了与发光半导体区域良好的欧姆接触，与非合金银相比，反射率没有任何明显的降低，反射层由含有主要比例的银和至少一种铜，金的银基合金制成，钯，钕，硅，铱，镍，钨，锌，镓，钛，镁，钇，铟和锡。

4. 发明授权

US07456435B2 Light-emitting semiconductor device 失效
标题翻译：发光半导体器件
公开(公告)号：US07456435B2
公开(公告)日：2008-11-25
申请号：US10994922
申请日：2004-11-22
申请人： Hidekazu Aoyagi , Koji Otsuka , Masahiro Sato
发明人： Hidekazu Aoyagi , Koji Otsuka , Masahiro Sato
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/007 , H01L33/04
摘要： A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.
摘要翻译：具有硅衬底的发光二极管，其上依次形成缓冲层，p型氮化物半导体层，有源层，n型氮化物半导体层和电流扩散层。电流扩展层是交替需要次数布置的第一和第二子层的叠层。由不同的化合物半导体组成，电流扩展层的交替子层产生用于提供二维气体效应的异质结。电流扩散层在平行于其从其发射光的主表面的方向上的电阻率如此低，使得电流有利地扩散在其中以提高发光效率。金属焊盘形式的前电极以电流扩散层的主表面中心地安装在其与其电阻接触的位置。

5. 发明申请

US20050110029A1 Light-emitting semiconductor device and method of fabrication 失效
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US20050110029A1
公开(公告)日：2005-05-26
申请号：US10994922
申请日：2004-11-22
申请人： Hidekazu Aoyagi , Koji Otsuka , Masahiro Sato
发明人： Hidekazu Aoyagi , Koji Otsuka , Masahiro Sato
IPC分类号： H01L33/00 , H01L33/04 , H01L33/14
CPC分类号： H01L33/14 , H01L33/007 , H01L33/04
摘要： A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.
摘要翻译：具有硅衬底的发光二极管，其上依次形成缓冲层，p型氮化物半导体层，有源层，n型氮化物半导体层和电流扩散层。电流扩展层是交替需要次数布置的第一和第二子层的叠层。由不同的化合物半导体组成，电流扩展层的交替子层产生用于提供二维气体效应的异质结。电流扩散层在平行于其从其发射光的主表面的方向上的电阻率如此低，使得电流有利地扩散在其中以提高发光效率。金属焊盘形式的前电极以电流扩散层的主表面中心地安装在其与其电阻接触的位置。

6. 发明申请

US20060001032A1 Light-emitting semiconductor device and method of fabrication 有权
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US20060001032A1
公开(公告)日：2006-01-05
申请号：US11222369
申请日：2005-09-08
申请人： Hitoshi Murofushi , Hidekazu Aoyagi , Shiro Takeda , Yoshihiko Uchida
发明人： Hitoshi Murofushi , Hidekazu Aoyagi , Shiro Takeda , Yoshihiko Uchida
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L33/405 , H01L33/44
摘要： An LED comprises a semiconductor region including an active layer for generating light. An anode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflective metal layer is bonded to the other major surface of the light-generating semiconductor region via an ohmic contact layer. Sufficiently thin to permit the passage of light therethrough, the ohmic contact layer is formed in an open-worked pattern to leave exposed part of the second major surface of the semiconductor region. A transparent, open-worked anti-alloying layer is interposed between the light-generating semiconductor region and the reflective metal layer, covering that part of the second major surface of the light-generating semiconductor region which is left exposed by the ohmic contact layer. The anti-alloying layer prevents the light-generating semiconductor region and reflective metal layer from alloying during heat treatments conducted in the curse of LED manufacture. A greater percentage of the light from the light-generating semiconductor region is reflected by the reflective metal layer for emission from the first major surface of the light-generating semiconductor region than in the absence of the anti-alloying layer.
摘要翻译： LED包括包括用于产生光的有源层的半导体区域。阳极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。反射金属层经由欧姆接触层与发光半导体区域的另一个主表面接合。足够薄以允许光通过其中，欧姆接触层以开放图案形成，以留下半导体区域的第二主表面的暴露部分。在发光半导体区域和反射金属层之间插入透明的开放式抗合金层，覆盖由欧姆接触层露出的发光半导体区域的第二主表面的那部分。防合金层在LED制造的诅咒中进行的热处理期间防止发光半导体区域和反射金属层的合金化。来自发光半导体区域的较大百分比的光被来自发光半导体区域的第一主表面的反射金属层反射，而不是不存在抗合金化层。

7. 发明授权

US07405431B2 Light-emitting semiconductor device having an overvoltage protector 有权
标题翻译：具有过电压保护器的发光半导体器件
公开(公告)号：US07405431B2
公开(公告)日：2008-07-29
申请号：US11225837
申请日：2005-09-13
申请人： Hidekazu Aoyagi , Tetsuji Matsuo
发明人： Hidekazu Aoyagi , Tetsuji Matsuo
IPC分类号： H01L27/15
CPC分类号： H01L25/167 , H01L24/48 , H01L27/15 , H01L2224/48464 , H01L2924/00014 , H01L2924/01012 , H01L2924/01029 , H01L2924/12035 , H01L2924/12036 , H01L2224/45099 , H01L2924/00 , H01L2224/85399 , H01L2224/05599
摘要： An LED includes a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating light. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflector of electroconductive material is formed on the other major surface of the semiconductor region for reflecting the light back toward the light-emitting surface of the semiconductor region. For protecting the LED against breakdown from overvoltages, a zener diode is employed which takes the form of a baseplate having two semiconductor regions of opposite conductivity types sandwiched between a pair of electrodes in the form of metal layers. The protector baseplate is integrated with the light-generating semiconductor region by joining one of the metal layers to the reflector under heat and pressure, thus serving as both mechanical support and overvoltage protector for the LED.
摘要翻译： LED包括具有夹在用于产生光的相反导电类型的两个约束层之间的有源层的发光半导体区域。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。在半导体区域的另一个主表面上形成导电材料的反射器，用于将光反射回半导体区域的发光表面。为了保护LED免受过电压击穿，采用齐纳二极管，其采用基板的形式，其具有夹在金属层形式的一对电极之间的具有相反导电类型的两个半导体区域的基板。保护器基板通过在加热和压力下将金属层之一连接到反射器而与发光半导体区域集成，从而用作LED的机械支撑和过电压保护器。

8. 发明授权

US07199401B2 Light-emitting semiconductor device 有权
标题翻译：发光半导体器件
公开(公告)号：US07199401B2
公开(公告)日：2007-04-03
申请号：US11058942
申请日：2005-02-16
申请人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
发明人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/30 , H01L33/14 , H01L33/405 , H01L33/42 , H01L33/46
摘要： An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. Attached to the other major surface of the semiconductor region, via an ohmic contact layer, is a reflective metal layer for reflecting the light that has traversed the ohmic contact layer, back toward the semiconductor region. A transparent antidiffusion layer is interposed between the ohmic contact layer and the reflective layer in order to prevent the ohmic contact layer and the reflective layer from thermally diffusing from one into the other to the impairment of the reflectivity of the reflective layer.
摘要翻译： LED包括半导体区域，其具有夹在相反导电类型的两个限制层之间的活性层，用于产生热量。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。通过欧姆接触层附着在半导体区域的另一个主表面上，是反射金属层，用于反射穿过欧姆接触层的光，朝向半导体区域。在欧姆接触层和反射层之间插入透明的反扩散层，以防止欧姆接触层和反射层从一个扩散到另一个到反射层的反射率的损害。

9. 发明申请

US20110140159A1 LIGHT-EMITTING ELEMENT 有权
标题翻译：发光元件
公开(公告)号：US20110140159A1
公开(公告)日：2011-06-16
申请号：US12685340
申请日：2010-01-11
申请人： Hidekazu Aoyagi
发明人： Hidekazu Aoyagi
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L27/15 , H01L33/38 , H01L2933/0016
摘要： Disclosed herein is a light-emitting element including: a first conductivity type semiconductor layer; a light-emitting functional layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the light-emitting functional layer; a first conductivity type electrode which has continuity with the exposed portion of the first conductivity type semiconductor layer; a second conductivity type electrode which has continuity with the second conductivity type semiconductor layer; an insulating layer which lies between the light-emitting functional layer, second conductivity type semiconductor layer and second conductivity type electrode on one part and the first conductivity type electrode on the other part; and an annex insulating layer annexed to the insulating layer to form a virtual diode having rectifying action in the opposite direction to that of a diode made up of the second conductivity type semiconductor layer, light-emitting functional layer and first conductivity type semiconductor layer.
摘要翻译：本发明公开了一种发光元件，包括：第一导电型半导体层; 形成在所述第一导电型半导体层上的发光功能层; 形成在所述发光功能层上的第二导电型半导体层; 与第一导电型半导体层的露出部分连续的第一导电型电极; 与第二导电类型半导体层具有连续性的第二导电类型电极; 位于发光功能层，第二导电型半导体层和第二导电型电极之间的绝缘层，另一部分上的第一导电型电极; 以及与绝缘层相邻的附件绝缘层，以形成具有与由第二导电类型半导体层，发光功能层和第一导电类型半导体层构成的二极管相反方向的整流作用的虚拟二极管。

10. 发明申请

US20050184300A1 Light-emitting semiconductor device and method of fabrication 有权
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US20050184300A1
公开(公告)日：2005-08-25
申请号：US11058942
申请日：2005-02-16
申请人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
发明人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
IPC分类号： H01L29/22 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/42 , H01L33/46
CPC分类号： H01L33/30 , H01L33/14 , H01L33/405 , H01L33/42 , H01L33/46
摘要： An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. Attached to the other major surface of the semiconductor region, via an ohmic contact layer, is a reflective metal layer for reflecting the light that has traversed the ohmic contact layer, back toward the semiconductor region. A transparent antidiffusion layer is interposed between the ohmic contact layer and the reflective layer in order to prevent the ohmic contact layer and the reflective layer from thermally diffusing from one into the other to the impairment of the reflectivity of the reflective layer.
摘要翻译： LED包括半导体区域，其具有夹在相反导电类型的两个限制层之间的活性层，用于产生热量。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。通过欧姆接触层附着在半导体区域的另一个主表面上，是反射金属层，用于反射穿过欧姆接触层的光，朝向半导体区域。在欧姆接触层和反射层之间插入透明的反扩散层，以防止欧姆接触层和反射层从一个扩散到另一个到反射层的反射率的损害。

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