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1. 发明授权

US09124240B2 Acoustic wave device and antenna duplexer employing the same 有权
标题翻译：声波装置和采用它的天线双工器
公开(公告)号：US09124240B2
公开(公告)日：2015-09-01
申请号：US13807070
申请日：2012-03-12
申请人： Hidehito Shimizu , Hiroyuki Nakamura , Takahiro Sato
发明人： Hidehito Shimizu , Hiroyuki Nakamura , Takahiro Sato
IPC分类号： H03H9/72 , H03H9/145 , H03H9/64 , H03H9/25 , H03H7/46
CPC分类号： H03H9/25 , H03H7/463 , H03H9/14594 , H03H9/6483 , H03H9/725
摘要： The present invention is an acoustic wave device including first and second acoustic wave resonators. A first tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the first acoustic wave resonator extend and a direction along which the electrode fingers are arranged is different from a second tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the second acoustic wave resonator extend and a direction along which the electrode fingers are arranged.
摘要翻译：本发明是一种包括第一和第二声波谐振器的声波装置。第一倾斜角是在与第一声波谐振器的电极指的延伸方向垂直的方向与电极指的排列方向之间形成的角度不同于第二倾斜角，垂直于第二声波谐振器的电极指的方向延伸的方向和电极指的排列方向。

2. 发明授权

US09118302B2 Filter module 有权
标题翻译：过滤模块
公开(公告)号：US09118302B2
公开(公告)日：2015-08-25
申请号：US14237168
申请日：2012-08-07
申请人： Hidehito Shimizu , Hiroyuki Nakamura , Takahiro Sato , Tetsuya Tsurunari
发明人： Hidehito Shimizu , Hiroyuki Nakamura , Takahiro Sato , Tetsuya Tsurunari
IPC分类号： H03H9/70 , H04B1/44 , H03H7/46 , H03H7/38 , H03H11/34 , H04B1/00
CPC分类号： H03H7/461 , H03H7/38 , H03H7/463 , H03H7/465 , H03H9/70 , H03H11/344 , H04B1/006
摘要： In a filter module capable of handling multiple bands, cross wiring with an RF-IC is to be solved. The filter module includes: an antenna terminal; first and second transmission filters; first and second reception filters; a first switch circuit connected to the antenna terminal, and selectively connected to the first and second transmission filters; a second switch circuit connected to the antenna terminal, and selectively connected to the first and second reception filters; a first matching circuit connected between the first switch circuit and the first transmission filter or between the second switch circuit and the first reception filter; and a second matching circuit connected between the first switch circuit and the second transmission filter or between the second switch circuit and the second reception filter.
摘要翻译：在能够处理多个频带的滤波器模块中，要解决与RF-IC的交叉布线。滤波器模块包括：天线端子; 第一和第二传输滤波器; 第一和第二接收滤波器; 连接到所述天线端子的第一开关电路，并且选择性地连接到所述第一和第二传输滤波器; 连接到天线端子的第二开关电路，并且选择性地连接到第一和第二接收滤波器; 连接在第一开关电路和第一发送滤波器之间或第二开关电路和第一接收滤波器之间的第一匹配电路; 以及连接在第一开关电路和第二发送滤波器之间或第二开关电路和第二接收滤波器之间的第二匹配电路。

3. 发明申请

US20140167877A1 FILTER MODULE 有权
标题翻译：过滤器模块
公开(公告)号：US20140167877A1
公开(公告)日：2014-06-19
申请号：US14237168
申请日：2012-08-07
申请人： Hidehito Shimizu , Hiroyuki Nakamura , Takahiro Sato , Tetsuya Tsurunari
发明人： Hidehito Shimizu , Hiroyuki Nakamura , Takahiro Sato , Tetsuya Tsurunari
IPC分类号： H03H7/46
CPC分类号： H03H7/461 , H03H7/38 , H03H7/463 , H03H7/465 , H03H9/70 , H03H11/344 , H04B1/006
摘要： In a filter module capable of handling multiple bands, cross wiring with an RF-IC is to be solved. The filter module includes: an antenna terminal; first and second transmission filters; first and second reception filters; a first switch circuit connected to the antenna terminal, and selectively connected to the first and second transmission filters; a second switch circuit connected to the antenna terminal, and selectively connected to the first and second reception filters; a first matching circuit connected between the first switch circuit and the first transmission filter or between the second switch circuit and the first reception filter; and a second matching circuit connected between the first switch circuit and the second transmission filter or between the second switch circuit and the second reception filter.
摘要翻译：在能够处理多个频带的滤波器模块中，要解决与RF-IC的交叉布线。滤波器模块包括：天线端子; 第一和第二传输滤波器; 第一和第二接收滤波器; 连接到所述天线端子的第一开关电路，并且选择性地连接到所述第一和第二传输滤波器; 连接到天线端子的第二开关电路，并且选择性地连接到第一和第二接收滤波器; 连接在第一开关电路和第一发送滤波器之间或第二开关电路和第一接收滤波器之间的第一匹配电路; 以及连接在第一开关电路和第二发送滤波器之间或第二开关电路和第二接收滤波器之间的第二匹配电路。

4. 发明申请

US20130099875A1 ACOUSTIC WAVE DEVICE AND ANTENNA DUPLEXER EMPLOYING THE SAME 有权
标题翻译：声波设备和使用其的天线双工器
公开(公告)号：US20130099875A1
公开(公告)日：2013-04-25
申请号：US13807070
申请日：2012-03-12
申请人： Hidehito Shimizu , Hiroyuki Nakamura , Takahiro Sato
发明人： Hidehito Shimizu , Hiroyuki Nakamura , Takahiro Sato
IPC分类号： H03H9/72 , H03H9/64
CPC分类号： H03H9/25 , H03H7/463 , H03H9/14594 , H03H9/6483 , H03H9/725
摘要： The present invention is an acoustic wave device including first and second acoustic wave resonators. A first tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the first acoustic wave resonator extend and a direction along which the electrode fingers are arranged is different from a second tilt angle that is an angle formed between a direction perpendicular to a direction in which electrode fingers of the second acoustic wave resonator extend and a direction along which the electrode fingers are arranged.
摘要翻译：本发明是一种包括第一和第二声波谐振器的声波装置。第一倾斜角是在与第一声波谐振器的电极指的延伸方向垂直的方向与电极指的排列方向之间形成的角度不同于第二倾斜角，垂直于第二声波谐振器的电极指的方向延伸的方向和电极指的排列方向。

5. 发明申请

US20120049690A1 ACOUSTIC WAVE DEVICE 有权
标题翻译：声波设备
公开(公告)号：US20120049690A1
公开(公告)日：2012-03-01
申请号：US13206660
申请日：2011-08-10
申请人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
发明人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
IPC分类号： H01L41/02
CPC分类号： H03H9/02637 , H03H9/02921 , H03H9/14538
摘要： An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, a reflector electrode, and a dummy electrode. The IDT electrode includes electrode fingers extending in a predetermined direction. The reflector electrode faces the IDT electrode across a gap. The dummy electrode is situated on a straight line extending in the predetermined direction through the gap. At least one of the distance between the dummy electrode and the IDT electrode and the distance between the dummy electrode and the reflector electrode is larger than the distance between the IDT electrode and the reflector electrode. This acoustic wave device prevents a short circuit between the IDT electrode and the reflector electrode, thereby avoiding a decrease in its yield.
摘要翻译：声波装置包括压电基板，叉指式换能器（IDT）电极，反射器电极和虚拟电极。 IDT电极包括沿预定方向延伸的电极指。反射器电极跨越间隙面对IDT电极。虚拟电极位于沿预定方向延伸穿过间隙的直线上。虚拟电极和IDT电极之间的距离和虚拟电极与反射器电极之间的距离中的至少一个大于IDT电极和反射器电极之间的距离。该声波器件防止IDT电极和反射器电极之间的短路，从而避免其产量的降低。

6. 发明授权

US08421307B2 Acoustic wave device 有权
标题翻译：声波装置
公开(公告)号：US08421307B2
公开(公告)日：2013-04-16
申请号：US13206660
申请日：2011-08-10
申请人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
发明人： Shoji Okamoto , Takashi Inoue , Takahiro Sato , Rei Goto , Hidehito Shimizu , Toru Jibu
IPC分类号： H01L41/08
CPC分类号： H03H9/02637 , H03H9/02921 , H03H9/14538
摘要： An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode, a reflector electrode, and a dummy electrode. The IDT electrode includes electrode fingers extending in a predetermined direction. The reflector electrode faces the IDT electrode across a gap. The dummy electrode is situated on a straight line extending in the predetermined direction through the gap. At least one of the distance between the dummy electrode and the IDT electrode and the distance between the dummy electrode and the reflector electrode is larger than the distance between the IDT electrode and the reflector electrode. This acoustic wave device prevents a short circuit between the IDT electrode and the reflector electrode, thereby avoiding a decrease in its yield.
摘要翻译：声波装置包括压电基板，叉指式换能器（IDT）电极，反射器电极和虚拟电极。 IDT电极包括沿预定方向延伸的电极指。反射器电极跨越间隙面对IDT电极。虚拟电极位于沿预定方向延伸穿过间隙的直线上。虚拟电极和IDT电极之间的距离和虚拟电极与反射器电极之间的距离中的至少一个大于IDT电极和反射器电极之间的距离。该声波装置防止IDT电极和反射器电极之间的短路，从而避免其产量的降低。

7. 发明授权

US09353310B2 Luminous material using fluorescence amorphous solid 有权
标题翻译：发光材料使用荧光无定形固体
公开(公告)号：US09353310B2
公开(公告)日：2016-05-31
申请号：US12716728
申请日：2010-03-03
申请人： Hiroki Iwanaga , Takahiro Sato
发明人： Hiroki Iwanaga , Takahiro Sato
IPC分类号： C09K11/06 , H01J1/62 , H01J63/04 , H05B33/14
CPC分类号： C09K11/06 , C09K2211/1096 , C09K2211/182 , H05B33/14
摘要： An amorphous luminous material, which is substantially composed of only rare earth complex compounds, wherein the compounds are two or more kinds of rare earth complexes, and rare earth metal ions, which are center ions of the two or more kinds of rare earth complexes, are different ions.
摘要翻译：一种无机发光材料，其基本上仅由稀土配合物组成，其中化合物为两种或多种稀土配合物，稀土金属离子为两种或多种稀土络合物的中心离子，是不同的离子。

8. 发明授权

US09331207B2 Oxide semiconductor device and manufacturing method therof 有权
标题翻译：氧化物半导体器件及其制造方法
公开(公告)号：US09331207B2
公开(公告)日：2016-05-03
申请号：US13937591
申请日：2013-07-09
申请人： Shunpei Yamazaki , Naoya Sakamoto , Takahiro Sato , Shunsuke Koshioka , Takayuki Cho , Yoshitaka Yamamoto , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki
发明人： Shunpei Yamazaki , Naoya Sakamoto , Takahiro Sato , Shunsuke Koshioka , Takayuki Cho , Yoshitaka Yamamoto , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki
IPC分类号： H01L29/10 , H01L29/786 , H01L29/201
CPC分类号： H01L29/7869 , H01L29/201
摘要： A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.
摘要翻译：半导体器件包括栅电极; 栅电极上的栅极绝缘膜; 与所述栅极绝缘膜接触并且包括与所述栅电极重叠的沟道形成区域的氧化物半导体膜; 氧化物半导体膜上的源电极和漏电极; 以及氧化物半导体膜，源电极和漏电极上的氧化物绝缘膜。源极电极和漏极电极各自包括在沟道形成区域的端部具有端部的第一金属膜，在第一金属膜上的含有铜的第二金属膜和在第二金属膜上的第三金属膜。第二金属膜形成在比第一金属膜的端部的内侧。

9. 发明授权

US09287424B2 Polyimide resin composition for use in forming reverse reflecting layer in photovoltaic cell and method of forming reverse reflecting layer in photovoltaic cell used therewith 有权
标题翻译：用于在光伏电池中形成反向反射层的聚酰亚胺树脂组合物及在其中使用的光伏电池中形成反向反射层的方法
公开(公告)号：US09287424B2
公开(公告)日：2016-03-15
申请号：US13822955
申请日：2011-09-20
申请人： Maw Soe Win , Toshiyuki Goshima , Takahiro Sato , Hidenao Takato , Isao Sakata
发明人： Maw Soe Win , Toshiyuki Goshima , Takahiro Sato , Hidenao Takato , Isao Sakata
IPC分类号： H01L31/0232 , C09D179/08 , H01L31/056 , C08G73/10
CPC分类号： H01L31/02327 , C08G73/1039 , C08G73/1042 , C08G73/1046 , C08G73/106 , C08G73/1064 , C08G73/1067 , C08G73/1071 , C08L2203/204 , C09D179/08 , H01L31/056 , Y02E10/52 , Y02E10/547 , C08K3/22
摘要： Disclosed are a method of forming a back reflection layer in a solar cell, a composition used therefor, and a solar cell having a back reflection layer formed by the method, which layer has superior heat-resistance and various types of durabilities, and can contribute to improving the conversion rate of solar cells and reliability during long-term use, and which method can form a back reflection layer in a solar cell easily and at low cost. The polyimide resin composition for use in forming a back reflection layer in a solar cell includes an organic solvent, a polyimide resin dissolved in the organic solvent, and light-reflecting particles dispersed in the organic solvent.
摘要翻译：公开了一种在太阳能电池中形成背反射层的方法，用于其的组合物和具有通过该方法形成的背面反射层的太阳能电池，该层具有优异的耐热性和各种类型的耐久性，并且可以贡献提高太阳能电池的转换率和长期使用中的可靠性，哪种方法可以容易地且低成本地在太阳能电池中形成背反射层。用于在太阳能电池中形成背反射层的聚酰亚胺树脂组合物包括有机溶剂，溶于有机溶剂中的聚酰亚胺树脂和分散在有机溶剂中的光反射颗粒。

10. 发明授权

US09234263B2 Weldment 有权
标题翻译：焊接
公开(公告)号：US09234263B2
公开(公告)日：2016-01-12
申请号：US13317463
申请日：2011-10-19
申请人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
发明人： Hiromitsu Kuroda , Toru Sumi , Hideyuki Sagawa , Seigi Aoyama , Masayoshi Goto , Takahiko Hanada , Takahiro Sato , Hidenori Abe
IPC分类号： B32B15/20 , C22C9/00 , B23K31/00 , C22C1/02 , C22C1/10 , C22F1/00 , C22F1/08
CPC分类号： C22C9/00 , B23K31/00 , B32B15/20 , C22C1/02 , C22C1/1036 , C22F1/00 , C22F1/08 , Y10T428/1266 , Y10T428/12667 , Y10T428/12882 , Y10T428/12903 , Y10T428/1291
摘要： A weldment includes metal materials that are welded to each other. At least one of the metal materials includes pure copper including an inevitable impurity, more than 2 mass ppm of oxygen, and an additive element selected from the group consisting of Mg, Zr, Nb, Fe, Si, Al, Ca, V, Ni, Mn, Ti and Cr. A method of manufacturing a weldment includes melting a dilute copper alloy material by SCR continuous casting and rolling at a molten copper temperature of not less than 1100° C. and not more than 1320° C. to make a molten metal, forming a cast bar from the molten metal, forming a dilute copper alloy member by hot-rolling the cast bar, and welding the dilute copper alloy member to a metal material. The dilute copper alloy material includes the pure copper, more than 2 mass ppm of oxygen, and the additive element,?
摘要翻译：焊件包括彼此焊接的金属材料。至少一种金属材料包括包含不可避免的杂质的纯铜，大于2质量ppm的氧，以及选自Mg，Zr，Nb，Fe，Si，Al，Ca，V，Ni ，Mn，Ti和Cr。一种焊接件的制造方法，其特征在于，以不低于1100℃，不高于1320℃的熔融铜温度，通过SCR连续铸造，熔融稀释的铜合金材料，形成熔融金属从熔融金属中，通过对铸造棒进行热轧而形成稀铜合金构件，并将稀铜合金构件焊接到金属材料上。稀铜合金材料包括纯铜，超过2质量ppm的氧和添加元素，

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