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    • 6. 发明授权
    • Semiconductor storage device
    • 半导体存储设备
    • US07843717B2
    • 2010-11-30
    • US12292380
    • 2008-11-18
    • Tomoyuki KaminoToru IshikawaHiroshi Ichikawa
    • Tomoyuki KaminoToru IshikawaHiroshi Ichikawa
    • G11C5/06
    • G11C11/4097G11C5/063G11C11/4076G11C11/4096
    • A semiconductor storage device includes a memory array compartmentalized into first and second regions alternately arranged. The second regions are formed by odd and even columns alternately arranged. The semiconductor storage device includes: a memory mat array arranged in each first region; a sense amp array arranged in each second region; local IO lines arranged in each second region and connected to the sense amp array; main IO lines crossing the first and second regions; and a read/write amplifier arranged in each second region and at an intersection region where the local IO lines cross the main IO lines. The read/write amplifier in an odd column is connected to a local IO line therein and to a local IO line in the next odd column. The read/write amplifier in an even column is connected to a local IO line therein and to a local IO line in the next even column.
    • 半导体存储装置包括分隔成交替布置的第一和第二区域的存储器阵列。 第二区域由奇数和偶数列交替布置形成。 半导体存储装置包括:布置在每个第一区域中的存储器阵列阵列; 布置在每个第二区域中的感测放大器阵列; 局部IO线布置在每个第二区域中并连接到感测放大器阵列; 跨越第一和第二区域的主IO线; 以及布置在每个第二区域和本地IO线与主IO线交叉的交叉区域的读/写放大器。 奇数列中的读/写放大器连接到其中的本地IO线,并连接到下一个奇数列中的本地IO线。 偶数列中的读/写放大器连接到其中的本地IO线,并连接到下一偶数列中的本地IO线。
    • 7. 发明申请
    • Semiconductor storage device
    • 半导体存储设备
    • US20090129137A1
    • 2009-05-21
    • US12292380
    • 2008-11-18
    • Tomoyuki KaminoToru IshikawaHiroshi Ichikawa
    • Tomoyuki KaminoToru IshikawaHiroshi Ichikawa
    • G11C5/06G11C7/06
    • G11C11/4097G11C5/063G11C11/4076G11C11/4096
    • A semiconductor storage device includes a memory array compartmentalized into first and second regions alternately arranged. The second regions are formed by odd and even columns alternately arranged. The semiconductor storage device includes: a memory mat array arranged in each first region; a sense amp array arranged in each second region; local IO lines arranged in each second region and connected to the sense amp array; main IO lines crossing the first and second regions; and a read/write amplifier arranged in each second region and at an intersection region where the local IO lines cross the main IO lines. The read/write amplifier in an odd column is connected to a local IO line therein and to a local IO line in the next odd column. The read/write amplifier in an even column is connected to a local 10 line therein and to a local IO line in the next even column.
    • 半导体存储装置包括分隔成交替布置的第一和第二区域的存储器阵列。 第二区域由奇数和偶数列交替布置形成。 半导体存储装置包括:布置在每个第一区域中的存储器阵列阵列; 布置在每个第二区域中的感测放大器阵列; 局部IO线布置在每个第二区域中并连接到感测放大器阵列; 跨越第一和第二区域的主IO线; 以及布置在每个第二区域和本地IO线与主IO线交叉的交叉区域的读/写放大器。 奇数列中的读/写放大器连接到其中的本地IO线,并连接到下一个奇数列中的本地IO线。 偶数列中的读/写放大器连接到其中的本地10线,并连接到下一偶数列中的本地IO线。