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1. 发明申请

US20140252465A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140252465A1
公开(公告)日：2014-09-11
申请号：US14352142
申请日：2012-10-17
申请人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa , Narumasa Soejima , Yukihiko Watanabe
发明人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa , Narumasa Soejima , Yukihiko Watanabe
IPC分类号： H01L29/423 , H01L29/66 , H01L21/28 , H01L29/78
CPC分类号： H01L29/4236 , H01L21/047 , H01L21/28008 , H01L21/823487 , H01L29/0619 , H01L29/0623 , H01L29/1608 , H01L29/41741 , H01L29/42368 , H01L29/66068 , H01L29/66666 , H01L29/7806 , H01L29/7813 , H01L29/7827
摘要： A semiconductor device has a semiconductor substrate including a body region, a drift region, a trench that extends from a surface of the semiconductor substrate into the drift region through the body region, and a source region located adjacent to the trench in a range exposed to the surface of the semiconductor substrate, the source region being isolated from the drift region by the body region. A specific layer is disposed on a bottom of the trench, and it has a characteristic of forming a depletion layer at a junction between the specific layer and the drift region. An insulating layer covers an upper surface of the specific layer and a sidewall of the trench. A conductive portion is formed on a part of the side wall of the trench. The conductive portion is joined to the specific layer, and reaches the surface of the semiconductor substrate.
摘要翻译：半导体器件具有半导体衬底，其包括体区，漂移区，从半导体衬底的表面延伸通过体区的漂移区的沟槽，以及与暴露于半导体衬底的表面，源区域通过身体区域与漂移区隔离。特定层设置在沟槽的底部，并且具有在特定层和漂移区之间的结处形成耗尽层的特征。绝缘层覆盖特定层的上表面和沟槽的侧壁。导电部分形成在沟槽的侧壁的一部分上。导电部分连接到特定层，并到达半导体衬底的表面。

2. 发明授权

US09276075B2 Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the same 有权
标题翻译：具有利用沟槽型栅电极的垂直MOSFET结构的半导体器件及其制造方法
公开(公告)号：US09276075B2
公开(公告)日：2016-03-01
申请号：US14352142
申请日：2012-10-17
申请人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa , Narumasa Soejima , Yukihiko Watanabe
发明人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa , Narumasa Soejima , Yukihiko Watanabe
IPC分类号： H01L29/78 , H01L21/8234 , H01L29/423 , H01L29/417 , H01L29/66 , H01L29/06 , H01L21/28 , H01L21/04 , H01L29/16
CPC分类号： H01L29/4236 , H01L21/047 , H01L21/28008 , H01L21/823487 , H01L29/0619 , H01L29/0623 , H01L29/1608 , H01L29/41741 , H01L29/42368 , H01L29/66068 , H01L29/66666 , H01L29/7806 , H01L29/7813 , H01L29/7827
摘要： A semiconductor device has a semiconductor substrate including a body region, a drift region, a trench that extends from a surface of the semiconductor substrate into the drift region through the body region, and a source region located adjacent to the trench in a range exposed to the surface of the semiconductor substrate, the source region being isolated from the drift region by the body region. A specific layer is disposed on a bottom of the trench, and it has a characteristic of forming a depletion layer at a junction between the specific layer and the drift region. An insulating layer covers an upper surface of the specific layer and a sidewall of the trench. A conductive portion is formed on a part of the side wall of the trench. The conductive portion is joined to the specific layer, and reaches the surface of the semiconductor substrate.
摘要翻译：半导体器件具有半导体衬底，其包括体区，漂移区，从半导体衬底的表面延伸通过体区的漂移区的沟槽，以及与暴露于半导体衬底的表面，源区域通过身体区域与漂移区隔离。特定层设置在沟槽的底部，并且具有在特定层和漂移区之间的结处形成耗尽层的特征。绝缘层覆盖特定层的上表面和沟槽的侧壁。导电部分形成在沟槽的侧壁的一部分上。导电部分连接到特定层，并到达半导体衬底的表面。

3. 发明授权

US08618555B2 Silicon carbide semiconductor device and method of manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US08618555B2
公开(公告)日：2013-12-31
申请号：US13117575
申请日：2011-05-27
申请人： Naohiro Suzuki , Hideo Matsuki , Masahiro Sugimoto , Hidefumi Takaya , Jun Morimoto , Tsuyoshi Ishikawa , Narumasa Soejima , Yukihiko Watanabe
发明人： Naohiro Suzuki , Hideo Matsuki , Masahiro Sugimoto , Hidefumi Takaya , Jun Morimoto , Tsuyoshi Ishikawa , Narumasa Soejima , Yukihiko Watanabe
IPC分类号： H01L29/66
CPC分类号： H01L29/7813 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068
摘要： The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.
摘要翻译：碳化硅半导体器件包括衬底，漂移层，基极区域，源极区域，沟槽，栅极绝缘层，栅极电极，源极电极，漏极电极和深层。深层设置在基底区域下方并且位于比沟槽更深的深度。深层在与沟槽的纵向方向交叉的方向上分成多个部分。这些部分包括设置在与沟槽相对应的位置处的一组部分，其在沟槽的纵向方向上以相等的间隔布置。该组部分围绕沟槽的底部的角落。

4. 发明申请

US20120319136A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：US20120319136A1
公开(公告)日：2012-12-20
申请号：US13581497
申请日：2012-02-06
申请人： Masato Noborio , Kensaku Yamamoto , Hideo Matsuki , Hidefumi Takaya , Masahiro Sugimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
发明人： Masato Noborio , Kensaku Yamamoto , Hideo Matsuki , Hidefumi Takaya , Masahiro Sugimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
IPC分类号： H01L29/24 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/66348 , H01L29/7397
摘要： A SiC device includes an inversion type MOSFET having: a substrate, a drift layer, and a base region stacked in this order; source and contact regions in upper portions of the base region; a trench penetrating the source and base regions; a gate electrode on a gate insulating film in the trench; a source electrode coupled with the source and base region; a drain electrode on a back of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has an impurity concentration distribution in a depth direction, and an inversion layer is provided in a portion of the deep layer on the side of the trench under application of the gate voltage.
摘要翻译： SiC器件包括反转型MOSFET，其具有：依次堆叠的衬底，漂移层和基极区域; 源极和接触区域在基极区域的上部; 穿透源区和基区的沟槽; 沟槽中的栅极绝缘膜上的栅电极; 源极与源极和基极区域耦合; 位于衬底背面的漏电极; 以及在漂移层的上部比沟槽更深的多个深层。每个深层在深度方向上具有杂质浓度分布，并且在施加栅极电压下在沟槽侧的深层的一部分中设置反转层。

5. 发明申请

US20140175459A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：US20140175459A1
公开(公告)日：2014-06-26
申请号：US13994855
申请日：2012-02-06
申请人： Kensaku Yamamoto , Masato Noborio , Hideo Matsuki , Hidefumi Takaya , Masahiro Sugimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
发明人： Kensaku Yamamoto , Masato Noborio , Hideo Matsuki , Hidefumi Takaya , Masahiro Sugimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
IPC分类号： H01L29/78 , H01L29/16 , H01L29/66
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/66348 , H01L29/7397
摘要： A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion.
摘要翻译： SiC半导体器件包括：半导体开关元件，其具有：依次层叠的基板，漂移层和基极区域; 源极区域和基极区域中的接触区域; 从源极区域的表面延伸以穿透基部区域的沟槽; 沟槽中的栅极绝缘膜上的栅电极; 源极，与源极区域和基极区域电耦合; 位于所述基板的背面的漏电极; 以及在漂移层的上部比沟槽更深的多个深层。每个深层具有上部和下部。上部的宽度小于下部。

6. 发明授权

US08952430B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08952430B2
公开(公告)日：2015-02-10
申请号：US13703284
申请日：2011-06-02
申请人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa
发明人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa
IPC分类号： H01L29/76 , H01L29/16 , H01L29/49 , H01L29/40 , H01L29/739 , H01L29/06 , H01L29/66 , H01L29/78 , H01L29/423
CPC分类号： H01L29/1608 , H01L21/046 , H01L29/0619 , H01L29/0623 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/407 , H01L29/41741 , H01L29/4236 , H01L29/42368 , H01L29/49 , H01L29/66068 , H01L29/7397 , H01L29/7811 , H01L29/7813
摘要： The present application relates to technology for improving a withstand voltage of a semiconductor device. The semiconductor device includes a termination area that surrounds a cell area. The cell area is provided with a plurality of main trenches. The termination area is provided with one or more termination trenches surrounding the cell area. A termination trench is disposed at an innermost circumference of one or more termination trenches. A body region is disposed on a surface of a drift region. Each main trench reaches the drift region. A gate electrode is provided within each main trench. The termination trench reaches the drift region. Sidewalls and a bottom surface of the termination trench are covered with a insulating layer. A surface of the insulating layer covering the bottom surface of the termination trench is covered with a buried electrode. A gate potential is applied to the buried electrode.
摘要翻译：本申请涉及用于提高半导体器件耐受电压的技术。半导体器件包括围绕单元区域的终止区域。单元区域设置有多个主沟槽。终端区域设置有围绕单元区域的一个或多个终止沟槽。终端沟槽设置在一个或多个端接沟槽的最内圆周处。体区域设置在漂移区域的表面上。每个主沟槽到达漂移区域。在每个主沟槽内设置栅电极。端接沟槽到达漂移区域。侧壁和终端沟槽的底表面被绝缘层覆盖。覆盖终端沟槽的底面的绝缘层的表面被掩埋电极覆盖。将栅极电位施加到掩埋电极。

7. 发明申请

US20130075760A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20130075760A1
公开(公告)日：2013-03-28
申请号：US13703284
申请日：2011-06-02
申请人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa
发明人： Hidefumi Takaya , Hideo Matsuki , Naohiro Suzuki , Tsuyoshi Ishikawa
IPC分类号： H01L29/16 , H01L29/49
CPC分类号： H01L29/1608 , H01L21/046 , H01L29/0619 , H01L29/0623 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/407 , H01L29/41741 , H01L29/4236 , H01L29/42368 , H01L29/49 , H01L29/66068 , H01L29/7397 , H01L29/7811 , H01L29/7813
摘要： The present application relates to technology for improving a withstand voltage of a semiconductor device. The semiconductor device includes a termination area that surrounds a cell area. The cell area is provided with a plurality of main trenches. The termination area is provided with one or more termination trenches surrounding the cell area. A termination trench is disposed at an innermost circumference of one or more termination trenches. A body region is disposed on a surface of a drift region. Each main trench reaches the drift region. A gate electrode is provided within each main trench. The termination trench reaches the drift region. Sidewalls and a bottom surface of the termination trench are covered with a insulating layer. A surface of the insulating layer covering the bottom surface of the termination trench is covered with a buried electrode. A gate potential is applied to the buried electrode.
摘要翻译：本申请涉及用于提高半导体器件耐受电压的技术。半导体器件包括围绕单元区域的终止区域。单元区域设置有多个主沟槽。终端区域设置有围绕单元区域的一个或多个终止沟槽。终端沟槽设置在一个或多个端接沟槽的最内圆周处。体区域设置在漂移区域的表面上。每个主沟槽到达漂移区域。在每个主沟槽内设置栅电极。端接沟槽到达漂移区域。侧壁和终端沟槽的底表面被绝缘层覆盖。覆盖终端沟槽的底面的绝缘层的表面被掩埋电极覆盖。将栅极电位施加到掩埋电极。

8. 发明授权

US08193564B2 Silicon carbide semiconductor device including deep layer 有权
标题翻译：碳化硅半导体器件包括深层
公开(公告)号：US08193564B2
公开(公告)日：2012-06-05
申请号：US12379076
申请日：2009-02-12
申请人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
发明人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
IPC分类号： H01L29/71
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0638 , H01L29/0661 , H01L29/0847 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7811 , H01L29/7828
摘要： A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench penetrating the source region and the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer. The deep layer is located under the base region, extends to a depth deeper than the trench and is formed along an approximately normal direction to a sidewall of the trench.
摘要翻译：碳化硅半导体器件包括衬底，位于衬底的第一表面上的漂移层，位于漂移层上的基极区域，位于基极区域上的源极区域，穿透源极区域和基极区域的沟槽漂移层，位于沟槽中的沟道层，位于沟道层上的栅极绝缘层，位于栅极绝缘层上的栅电极，与源区和基极区电耦合的源电极，位于在衬底的第二表面上和深层。深层位于基底区域下方，延伸到比沟槽更深的深度，并且沿着大致正常的方向形成在沟槽的侧壁上。

9. 发明申请

US20090200559A1 Silicon carbide semiconductor device including deep layer 有权
标题翻译：碳化硅半导体器件包括深层
公开(公告)号：US20090200559A1
公开(公告)日：2009-08-13
申请号：US12379076
申请日：2009-02-12
申请人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
发明人： Naohiro Suzuki , Eiichi Okuno , Hideo Matsuki
IPC分类号： H01L29/15
CPC分类号： H01L29/7813 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0638 , H01L29/0661 , H01L29/0847 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7811 , H01L29/7828
摘要： A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench penetrating the source region and the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer. The deep layer is located under the base region, extends to a depth deeper than the trench and is formed along an approximately normal direction to a sidewall of the trench.
摘要翻译：碳化硅半导体器件包括衬底，位于衬底的第一表面上的漂移层，位于漂移层上的基极区域，位于基极区域上的源极区域，穿透源极区域和基极区域的沟槽漂移层，位于沟槽中的沟道层，位于沟道层上的栅极绝缘层，位于栅极绝缘层上的栅电极，与源区和基极区电耦合的源电极，位于在衬底的第二表面上和深层。深层位于基底区域下方，延伸到比沟槽更深的深度，并且沿着大致正常的方向形成在沟槽的侧壁上。

10. 发明授权

US07855412B2 Silicon carbide semiconductor device and method of manufacturing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US07855412B2
公开(公告)日：2010-12-21
申请号：US12453520
申请日：2009-05-14
申请人： Hideo Matsuki , Eiichi Okuno , Naohiro Suzuki
发明人： Hideo Matsuki , Eiichi Okuno , Naohiro Suzuki
IPC分类号： H01L27/108 , H01L29/76
CPC分类号： H01L21/0465 , H01L21/0475 , H01L29/1608 , H01L29/66068
摘要： An SiC semiconductor device includes a substrate, a drift layer disposed on a first surface of the substrate, a base region disposed above the drift layer, a source region disposed above the base region, a trench penetrating the source region and the base region to the drift layer, a gate insulating layer disposed on a surface of the trench, a gate electrode disposed on a surface of the gate insulating layer, a first electrode electrically coupled with the source region and the base region, a second electrode disposed on the second surface of the substrate, and a second conductivity-type layer disposed at a portion of the base region located under the source region. The second conductivity-type layer has the second conductivity type and has an impurity concentration higher than the base region.
摘要翻译： SiC半导体器件包括衬底，设置在衬底的第一表面上的漂移层，设置在漂移层上方的基极区域，设置在基极区域上方的源极区域，穿透源极区域和基极区域的沟槽漂移层，设置在沟槽表面上的栅极绝缘层，设置在栅极绝缘层的表面上的栅极电极，与源极区域和基极区域电耦合的第一电极，设置在第二表面上的第二电极以及设置在位于源极区域下方的基极区域的一部分的第二导电型层。第二导电型层具有第二导电类型并且具有高于基极区的杂质浓度。

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