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    • 9. 发明授权
    • Silicon carbide single crystal wafer and manufacturing method for same
    • 碳化硅单晶晶片及其制造方法相同
    • US09234297B2
    • 2016-01-12
    • US14241623
    • 2012-08-29
    • Shinya SatoTatsuo FujimotoHiroshi TsugeMasakazu Katsuno
    • Shinya SatoTatsuo FujimotoHiroshi TsugeMasakazu Katsuno
    • B32B3/02C30B23/02C30B29/36C30B23/00H01L29/16
    • C30B23/02C30B23/00C30B29/36H01L29/1608Y10T428/21
    • Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced.The method is a method for manufacturing a SiC single crystal by the PVT method using a seed crystal and the ingot is a SiC single crystal ingot obtained by the method. Particularly, the silicon carbide single crystal substrate is a silicon carbide single crystal substrate in which when, by representing the diameter of the substrate as R, a center circle region having a diameter of 0.5×R centered around a center point O of the substrate and a doughnut-shaped peripheral region remaining by excluding the center circle region are defined, the average value of screw dislocation densities observed in the doughnut-shaped peripheral region is 80% or less of the average value of screw dislocation densities observed in the center circle region.
    • 提供一种制造具有高结晶质量,特别是极低螺旋位错密度的SiC单晶的方法和通过该方法获得的SiC单晶锭。 特别地,提供了碳化硅单晶基板,其是从通过物理运输(PVT)方法生长的块状碳化硅单晶切割的基板,其中在周边区域中的螺旋位错密度小于中心 区域,使得螺旋位错部分减少。 该方法是通过使用晶种的PVT方法制造SiC单晶的方法,并且该锭是通过该方法获得的SiC单晶锭。 特别地,碳化硅单晶衬底是碳化硅单晶衬底,其中当通过将衬底的直径表示为R时,以衬底的中心点O为中心的直径为0.5×R的中心圆区域, 定义了通过排除中心圆区域而剩余的环状周边区域,在圆环状周边区域观察到的螺旋位错密度的平均值为在中心圆区域观察到的螺旋位错密度的平均值的80%以下 。
    • 10. 发明授权
    • Liquid crystal optical element and optical pickup apparatus
    • 液晶光学元件和光学拾取装置
    • US08891034B2
    • 2014-11-18
    • US12413414
    • 2009-03-27
    • Yoshiharu TakaneShinya SatoNobuhiro Sato
    • Yoshiharu TakaneShinya SatoNobuhiro Sato
    • G02F1/133G02F1/13G09G3/36G02B5/18G11B7/1369G11B7/1353
    • G11B7/1353G02B5/1828G11B7/1369
    • A liquid crystal optical element having a crystal liquid optical element adapted to positively function as a diffraction element and an optical pickup apparatus including the liquid crystal optical element are disclosed. A transparent electrode having a diffraction pattern is arranged on one of a pair of transparent substrates. A liquid crystal panel has a transparent opposed electrode arranged on the other one of the pair of the transparent substrates. A driving unit generates a phase difference distribution in the liquid crystal layer by generating a potential difference between the transparent electrode and the transparent opposed electrode and causes the liquid crystal panel to function as a diffraction element for diffracting the incoming light beam transmitted therethrough. The diffraction pattern or the transparent opposed electrode is divided into a plurality of regions. The driving unit adjusts the potential difference for each of the regions.
    • 公开了一种液晶光学元件,其具有适用于作为衍射元件的结晶液体光学元件和包括该液晶光学元件的光学拾取装置。 具有衍射图案的透明电极设置在一对透明基板中的一个上。 液晶面板具有布置在一对透明基板中的另一个上的透明相对电极。 驱动单元通过产生透明电极和透明相对电极之间的电位差而在液晶层中产生相位差分布,并使液晶面板用作用于衍射透射入射光束的衍射元件。 衍射图案或透明相对电极被分成多个区域。 驱动单元调整每个区域的电位差。