会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • MEMORY FOR STORING INFORMATION
    • 存储信息记忆
    • WO2005017908A1
    • 2005-02-24
    • PCT/US2003/024550
    • 2003-08-06
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    • RADOMINSKI, GeorgeWEBER, Timothy, L.LEITH, Steven, D.
    • G11C13/02
    • G11C13/02G11B9/00G11B2005/0002G11B2005/0005
    • A memory apparatus (10) has a plurality of first electrodes (12) and at least one second electrode (14) separated by an electrolyte solution (16). Information may be recorded by causing an electrical current to flow between a selected of the first electrodes (12) and the second electrode (14) to deposit an electrochemically active material (26) on one of the selected first (12) or the second electrodes (14). A method for recording and reading information has steps of writing the information by causing a current to flow between a first (12) and a second electrode (14) through an electrolyte solution (16) to cause a material (26) to electrodeposit, and reading the information by sensing the material (26) with a sensor (18).
    • 存储装置(10)具有多个第一电极(12)和由电解质溶液(16)分离的至少一个第二电极(14)。 可以通过使电流在选定的第一电极(12)和第二电极(14)之间流动,以将电化学活性材料(26)沉积在所选择的第一(12)或第二电极 (14)。 用于记录和读取信息的方法具有通过使电流通过电解质溶液(16)在第一电极(12)和第二电极(14)之间流动以使材料(26)电沉积的方式来写入信息的步骤,以及 通过用传感器(18)感测材料(26)来读取信息。