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2. 发明公开

EP0384145A1 Multilevel resist plated transfer layer process for fine line lithography 失效
标题翻译： Feinstruktur-Litographieverfahren unter Verwendung von Fotolackschichten und einer plattierten Transferschicht。
公开(公告)号：EP0384145A1
公开(公告)日：1990-08-29
申请号：EP90101421.7
申请日：1990-01-24
申请人： Hewlett-Packard Company
发明人： Studebaker, Lawrence G. , Wong, Edward H.
IPC分类号： H01L21/027 , H01L29/812 , H01L21/28 , H01L21/328
CPC分类号： H01L29/66863 , H01L21/0272 , H01L21/31144 , Y10S148/10 , Y10S148/105 , Y10S148/143 , Y10S438/945 , Y10S438/947 , Y10S438/949
摘要： A multilevel resist process for fine line e-beam lithography, or, alternatively, deep ultraviolet (DUV) optical lithography with a clear field mask involving the use of a plated transfer layer for image reversal. The process preferably uses a high brightness, quarter-micron diameter electron beam and a high speed negative resist to fabricate microwave MESFETs, MODFETS, and integrated circuits with gate lengths of 0.25 micron and below. This is achieved by producing a line of negative resist which can be developed to 0.25 micron or below. A plated transfer layer is then applied which provides image reversal, converting the line of resist into an opening suitable for conventional gate recess etching, gate metal deposition, and lift-off. A positive resist can be substituted for the negative e-beam resist and exposed with DUV through a clear field mask instead of an electron beam for the fabrication of MESFETs.
摘要翻译：用于细线电子束光刻的多层抗蚀剂工艺，或者具有涉及使用电镀转移层进行图像反转的清晰场屏蔽的深紫外（DUV）光刻。该工艺优选使用高亮度，四分之一微米直径的电子束和高速负抗蚀剂来制造微米MESFET，MODFET和栅极长度为0.25微米及以下的集成电路。这是通过生产可以显影至0.25微米或更低的负性抗蚀剂线来实现的。然后施加电镀转印层，其提供图像反转，将抗蚀剂线转换成适合于常规栅极凹槽蚀刻，栅极金属沉积和剥离的开口。正抗蚀剂可以代替负电子束抗蚀剂，并通过清除场掩膜而不是用于制造MESFET的电子束用DUV曝光。

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