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    • 5. 发明申请
    • METHOD AND APPARATUS FOR PRE-SCHEDULING IN CLOSED-LOOP MU-MIMO ANTENNA SYSTEM
    • 用于在闭环MU-MIMO天线系统中预调度的方法和装置
    • US20110188599A1
    • 2011-08-04
    • US13019366
    • 2011-02-02
    • Seung-Won KangSung-Woo ParkSoon-Young YoonKeun-Chul Hwang
    • Seung-Won KangSung-Woo ParkSoon-Young YoonKeun-Chul Hwang
    • H04B7/02
    • H04B7/02
    • A method and an apparatus for pre-scheduling in a closed-loop multiple user multiple input multiple output (MU-MIMO) antenna system. A base station receives channel information representing a downlink channel condition of each mobile station from mobile stations in a cell, and determines a candidate user group for each of frequency bands included in an entire frequency band, based on the channel information, the candidate user group including mobile stations to which resources can be simultaneously allocated. The base station also instructs a mobile station included in each candidate user group to transmit a sounding signal through a corresponding frequency band. If the sounding signal is received through the corresponding frequency band, the base station performs a scheduling with regard to the mobile station included in each candidate user group.
    • 一种用于在闭环多用户多输入多输出(MU-MIMO)天线系统中进行预调度的方法和装置。 基站从小区中的移动台接收表示各移动站的下行链路信道状态的信道信息,并根据信道信息确定候选用户组,该候选用户组中包含在整个频带中的频带中的每个频带,候选用户组 包括可以同时分配资源的移动台。 基站还指示包括在每个候选用户组中的移动台通过对应的频带发送探测信号。 如果通过相应的频带接收到探测信号,则基站对每个候选用户组中包括的移动台进行调度。
    • 10. 发明申请
    • Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the method
    • 使用热处理制造薄介电层的方法和使用该方法形成的半导体器件
    • US20050106897A1
    • 2005-05-19
    • US10832952
    • 2004-04-27
    • Sung-Taeg KangJeong-Uk HanSung-Woo ParkSeung-Beom YoonJi-Hoon ParkBo-Young Seo
    • Sung-Taeg KangJeong-Uk HanSung-Woo ParkSeung-Beom YoonJi-Hoon ParkBo-Young Seo
    • H01L27/115H01L21/28H01L21/314H01L21/8234H01L21/44H01L21/31H01L21/469
    • H01L21/0214H01L21/02249H01L21/02252H01L21/28273H01L21/3144
    • In a method for forming a semiconductor device and a semiconductor device formed in accordance with the method, a thin dielectric layer is provided between a lower conductive layer and an upper conductive layer. In one embodiment, the thin dielectric layer comprises an inter-gate dielectric layer, the lower conductive layer comprises a floating gate and the upper dielectric layer comprises a control gate of a transistor, for example, a non-volatile memory cell transistor. The thin dielectric layer is formed using a heat treating process that results in reduction of surface roughness of the underlying floating gate, and results in a thin silicon oxy-nitride layer being formed on the floating gate. In this manner, the thin dielectric layer provides for increased capacitive coupling between the lower floating gate and the upper control gate. This also leads to a lowered programming voltage, erasing voltage and read voltage for the transistor, while maintaining the threshold voltage in a desired range. In addition, the size of the transistor and resulting storage cell can be minimized and the need for a high-voltage region in the circuit is mitigated, since, assuming a lowered programming voltage, pumping circuitry is not required.
    • 在根据该方法形成的半导体器件和半导体器件的形成方法中,在下导电层和上导电层之间设置有薄的电介质层。 在一个实施例中,薄介电层包括栅极间电介质层,下导电层包括浮动栅极,上介电层包括晶体管的控制栅极,例如非易失性存储单元晶体管。 使用导致下面的浮置栅极的表面粗糙度降低的热处理工艺形成薄介电层,并且导致在浮动栅极上形成薄的氧氮化硅层。 以这种方式,薄介电层提供在下浮动栅极和上控制栅极之间增加的电容耦合。 这也导致降低的编程电压,擦除晶体管的电压和读取电压,同时将阈值电压保持在期望的范围内。 此外,晶体管和所得到的存储单元的尺寸可以被最小化,并且减轻了对电路中的高电压区域的需要,因为假设降低的编程电压,不需要泵浦电路。