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1. 发明授权

US4942316A Cascode logic circuit including a positive level shift at the input of the top logic stage 失效
标题翻译：串行逻辑电路包括在顶部逻辑级的输入端的正电平移位
公开(公告)号：US4942316A
公开(公告)日：1990-07-17
申请号：US275860
申请日：1988-11-25
申请人： Herve Beranger , Armand Brunin , Bruno Caplier , Jean-Paul Rousseau
发明人： Herve Beranger , Armand Brunin , Bruno Caplier , Jean-Paul Rousseau
IPC分类号： H03K3/289 , H03K19/0185 , H03K19/086 , H03K19/173
CPC分类号： H03K19/018514 , H03K19/0866 , H03K19/1738 , H03K3/289
摘要： A logic circuit family derived from the conventional 2 level single-ended cascode logic circuit. The basic logic circuit performing a 2--2 OA/AI logic function shown in the attached drawing is given for illustration purposes. It comprises: a logic tree 35 comprised of top and bottom stages 37, 36 dotted at the tree output 38 to perform a determined logic function; the top stage 37 includes a current switch comprised of two input transistors TX34, TX35 connected in a differential amplifier configuration with a reference transistor TX36. The bases of input transistors TX34, TX35 are provided with at least two level shifter devices. Preferably, input level shifter devices are Schottky diodes P31, . . . which move the voltages towards the more positive voltage VPP, to add an AND function on each of these input transistors.
摘要翻译：一种来自传统的2级单端串联逻辑电路的逻辑电路系列。为了说明的目的，给出了执行附图中所示的2-2 OA / AI逻辑功能的基本逻辑电路。它包括：逻辑树35，其由顶部和底部阶段37,36组成，其点缀在树形输出38以执行确定的逻辑功能; 顶级37包括由以差分放大器配置连接到参考晶体管TX36的两个输入晶体管TX34，TX35组成的电流开关。输入晶体管TX34，TX35的基极设置有至少两个电平移位器装置。优选地，输入电平转换器件是肖特基二极管P31。。。其将电压移向更正的正电压VPP，以在这些输入晶体管的每一个上添加AND功能。

2. 发明授权

US4592023A Latch for storing a data bit and a store incorporating said latch 失效
标题翻译：用于存储数据位的锁存器和包含所述锁存器的存储器
公开(公告)号：US4592023A
公开(公告)日：1986-05-27
申请号：US623052
申请日：1984-06-21
申请人： Herve Beranger , Armand Brunin , Jean-Paul Rousseau
发明人： Herve Beranger , Armand Brunin , Jean-Paul Rousseau
IPC分类号： H04B14/04 , G11C11/411 , H03K3/288 , G11C7/00
CPC分类号： H03K3/288 , G11C11/4113
摘要： A latch that can serve as a bit storage cell in a random-access store. The latch includes an AND gate (diodes D1 and D2) the input IN of which receives the bit to be stored and the other input of which is connected to a write control line WRL. When no write operation is being performed, transistor T1 is turned off and the state of transistor T2 is dependent on output potential OUT. To perform a write operation, line WRL is activated (goes high) and the state of transistor T3 will depend on the value of the bit applied to input IN. Read operations are performed by means of another AND gate (diodes D4 and D5) and an emitter follower (transistor T4) connected via a bit line BL to an output circuit 2. By adding input transistors and emitter followers to the latch, a multi-port storage can be realized, several rows of which can be simultaneously written into and/or read out.
摘要翻译：可以作为随机存取存储区中的位存储单元的锁存器。锁存器包括与门（二极管D1和D2），其输入端IN接收待存储的位，其另一个输入端连接到写控制线WRL。当不执行写入操作时，晶体管T1截止，晶体管T2的状态取决于输出电位OUT。为了执行写操作，线WRL被激活（变高），晶体管T3的状态将取决于施加到输入IN的位的值。通过另一个与门（二极管D4和D5）和经由位线BL连接到输出电路2的射极跟随器（晶体管T4）执行读取操作。通过将输入晶体管和发射极跟随器添加到锁存器，可以实现端口存储，其中几行可以被同时写入和/或读出。

3. 发明授权

US5206060A Process and device for the deposition of thin layers and product made thereby 失效
标题翻译：用于沉积薄层及其制品的工艺和装置
公开(公告)号：US5206060A
公开(公告)日：1993-04-27
申请号：US565295
申请日：1990-08-09
申请人： Pierre Balian , Jean-Paul Rousseau
发明人： Pierre Balian , Jean-Paul Rousseau
IPC分类号： C23C16/00 , C03C17/38 , C23C16/458 , C23C16/50 , C23C16/509 , C23C16/511
CPC分类号： C23C16/509 , C03C17/38
摘要： This invention relates to a process and a device for the deposition of thin layers on a substrate using a plasma-CVD technique. The substrate itself, which previously has been made conductive by the deposition of conductive layers, is used as an electrode to create the discharge. In particular, the technique can be applied to the deposition of organosilicon layers on glass plates of large dimensions. The invention also relates to a glass substrate covered by thin layers including at least one metal layer, in particular silver, on which the organosilicon layer is deposited according to the process.
摘要翻译：本发明涉及一种使用等离子体CVD技术在衬底上沉积薄层的方法和装置。以前已经通过沉积导电层而导电的衬底本身被用作电极以产生放电。特别地，该技术可以应用于在大尺寸的玻璃板上沉积有机硅层。本发明还涉及由薄层覆盖的玻璃基板，该薄层包括根据该方法沉积有机硅层的至少一个金属层，特别是银。

4. 发明申请

US20110056825A1 DIELECTRIC-LAYER-COATED SUBSTRATE AND INSTALLATION FOR PRODUCTION THEREOF 审中-公开
标题翻译：电介质涂层基板及其生产安装
公开(公告)号：US20110056825A1
公开(公告)日：2011-03-10
申请号：US12876625
申请日：2010-09-07
申请人： Carole BAUBET , Klaus Fischer , Marcus Loergen , Jean-Christophe Giron , Nicolas Nadaud , Eric Mattman , Jean-Paul Rousseau , Alfred Hofrichter , Manfred Jansen
发明人： Carole BAUBET , Klaus Fischer , Marcus Loergen , Jean-Christophe Giron , Nicolas Nadaud , Eric Mattman , Jean-Paul Rousseau , Alfred Hofrichter , Manfred Jansen
IPC分类号： C23C14/34
CPC分类号： C03C17/22 , B32B17/10174 , C03C17/225 , C03C17/245 , C03C17/2456 , C03C17/36 , C03C17/3613 , C03C17/3618 , C03C17/3626 , C03C17/3644 , C03C17/3652 , C03C17/366 , C03C2217/21 , C03C2217/281 , C03C2217/78 , C03C2218/154 , C03C2218/155 , C23C14/0052 , C23C14/08 , C23C14/086 , C23C14/3442 , C23C14/5833 , H01J2211/446
摘要： The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam is crystallized.
摘要翻译：本发明涉及涂覆有通过溅射沉积的至少一个电介质薄膜层的衬底（1），特别是在氧气和/或氮气存在下，特别是磁性增强溅射和优选反应性溅射的衬底（1），暴露于来自离子源（4）的至少一个离子束（3），其特征在于暴露于离子束的所述电介质层结晶。

5. 发明授权

US08080108B2 Method for cleaning a substrate 有权
标题翻译：清洗基材的方法
公开(公告)号：US08080108B2
公开(公告)日：2011-12-20
申请号：US10586967
申请日：2005-01-21
申请人： Nicolas Nadaud , Eric Mattman , Jean-Paul Rousseau , Marcus Loergen
发明人： Nicolas Nadaud , Eric Mattman , Jean-Paul Rousseau , Marcus Loergen
IPC分类号： B08B6/00
CPC分类号： C23C14/022 , C03C23/006 , C03C23/0075 , C03C2218/31 , C23C16/0245 , Y10T428/24612
摘要： A method for the continuous vacuum cleaning of a substrate, characterized in that: a species is chosen that has a low sputtering efficiency and is chemically active with regard to the soiling matter; using at least one linear ion source, a plasma is generated from a gas mixture comprising predominantly the species having a low sputtering efficiency, especially one based on oxygen; and at least one surface portion of the substrate is subjected to the plasma so that said ionized species at least partly eliminates, by chemical reaction, the soiling matter possibly adsorbed or located on the surface portion.
摘要翻译：一种用于基材的连续真空清洁的方法，其特征在于：选择具有低溅射效率并且对于污染物质具有化学活性的物质; 使用至少一个线性离子源，从主要是具有低溅射效率的物质，特别是基于氧的物质的气体混合物产生等离子体; 并且基板的至少一个表面部分经受等离子体，使得所述离子化物质通过化学反应至少部分地消除可能吸附或位于表面部分上的污染物质。

6. 发明申请

US20060275612A1 Dielectric-layer-coated substrate and installation for production thereof 审中-公开
标题翻译：电介质层被覆基板和其制造的安装
公开(公告)号：US20060275612A1
公开(公告)日：2006-12-07
申请号：US10562121
申请日：2004-06-28
申请人： Carole Baubet , Klaus Fischer , Marcus Loergen , Jean-Christophe Giron , Nicole Nadaud , Eric Mattman , Jean-Paul Rousseau , Alfred Hofrichter , Manfred Jansen
发明人： Carole Baubet , Klaus Fischer , Marcus Loergen , Jean-Christophe Giron , Nicole Nadaud , Eric Mattman , Jean-Paul Rousseau , Alfred Hofrichter , Manfred Jansen
IPC分类号： C23C14/32 , C23C14/00 , B32B17/06 , B32B9/00
CPC分类号： C03C17/22 , B32B17/10174 , C03C17/225 , C03C17/245 , C03C17/2456 , C03C17/36 , C03C17/3613 , C03C17/3618 , C03C17/3626 , C03C17/3644 , C03C17/3652 , C03C17/366 , C03C2217/21 , C03C2217/281 , C03C2217/78 , C03C2218/154 , C03C2218/155 , C23C14/0052 , C23C14/08 , C23C14/086 , C23C14/3442 , C23C14/5833 , H01J2211/446
摘要： The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam is crystallized.
摘要翻译：本发明涉及涂覆有通过溅射沉积的至少一个电介质薄膜层的衬底（1），特别是在氧气和/或氮气存在下，特别是磁性增强溅射和优选反应性溅射的衬底（1），暴露于来自离子源（4）的至少一个离子束（3），其特征在于暴露于离子束的所述电介质层结晶。

7. 发明申请

US20140120341A1 PROCESS FOR MANUFACTURING GLAZING COMPRISING A POROUS LAYER 有权
标题翻译：制造包含多孔层的玻璃的方法
公开(公告)号：US20140120341A1
公开(公告)日：2014-05-01
申请号：US14126767
申请日：2012-06-15
申请人： Andriy Kharchenko , Jean-Paul Rousseau , Antje Jung , Christian Bernhard Petersen
发明人： Andriy Kharchenko , Jean-Paul Rousseau , Antje Jung , Christian Bernhard Petersen
IPC分类号： C23C14/08 , C23C14/10
CPC分类号： C23C14/083 , C03C17/001 , C03C17/006 , C03C2217/425 , C23C14/0057 , C23C14/06 , C23C14/0605 , C23C14/10 , Y10T428/249969 , Y10T428/24997
摘要： A process for manufacturing glazing including a substrate provided with a coating including a layer consisting of a porous material, includes depositing on the substrate, via a physical vapor deposition (PVD) process in a vacuum chamber, a coating including a layer of a material including an element selected from Si, Ti, Sn, Al, Zr, In or a mixture of at least two of these elements, oxygen and carbon, the layer in addition optionally including hydrogen, heat treatment of the layer thus deposited, under conditions that enable at least one portion of the carbon to be removed and the layer of porous material to be obtained, wherein the deposition is carried out, on the substrate passing through the chamber, by the sputtering of a carbon target, under a reactive plasma atmosphere including a precursor of the element or elements.
摘要翻译：一种用于制造玻璃的方法，其包括具有包括由多孔材料构成的层的涂层的基底，包括通过真空室中的物理气相沉积（PVD）工艺在基底上沉积包括包含选自Si，Ti，Sn，Al，Zr，In或这些元素中的至少两个的混合物，氧和碳，该层另外任选地包括氢，在如此沉积的层上进行热处理，将待除去的碳的至少一部分和要获得的多孔材料层，其中通过溅射碳靶，在穿过所述室的基板上进行沉积，所述反应性等离子体气氛包括元素或元素的前体。

8. 发明申请

US20060234064A1 Dielectric-layer-coated substrate and installation for production thereof 有权
标题翻译：电介质层被覆基板和其制造的安装
公开(公告)号：US20060234064A1
公开(公告)日：2006-10-19
申请号：US10562451
申请日：2004-06-28
申请人： Carole Baubet , Klaus Fischer , Marcus Loergen , Jean-Christophe Giron , Nicolas Nadaud , Eric Mattman , Jean-Paul Rousseau , Alfred Hofrichter , Manfred Jansen
发明人： Carole Baubet , Klaus Fischer , Marcus Loergen , Jean-Christophe Giron , Nicolas Nadaud , Eric Mattman , Jean-Paul Rousseau , Alfred Hofrichter , Manfred Jansen
IPC分类号： C23C14/00 , B32B17/06 , B32B9/00 , C23C16/00
CPC分类号： C03C17/22 , B32B17/10174 , C03C17/225 , C03C17/245 , C03C17/2456 , C03C17/36 , C03C17/3613 , C03C17/3618 , C03C17/3626 , C03C17/3644 , C03C17/3652 , C03C17/366 , C03C2217/21 , C03C2217/281 , C03C2217/78 , C03C2218/154 , C03C2218/155 , C23C14/0052 , C23C14/08 , C23C14/086 , C23C14/3442 , C23C14/5833 , H01J2211/446
摘要： The invention relates to a substrate (1), especially a glass substrate, coated with at least one dielectric thin-film layer deposited by sputtering, especially magnetically enhanced sputtering and preferably reactive sputtering in the presence of oxygen and/or nitrogen, with exposure to at least one ion beam (3) coming from an ion source (4), characterized in that said dielectric layer exposed to the ion beam has a refractive index that can be adjusted according to the parameters of the ion source, said ion source being a linear source.
摘要翻译：本发明涉及涂覆有通过溅射沉积的至少一个电介质薄膜层的衬底（1），特别是在氧气和/或氮气存在下，特别是磁性增强溅射和优选反应性溅射的衬底（1），暴露于来自离子源（4）的至少一个离子束（3），其特征在于，暴露于离子束的所述电介质层具有可根据离子源的参数进行调节的折射率，所述离子源为线性源。

9. 发明授权

US5952084A Transparent substrate provided with a thin-film coating 失效
标题翻译：透明基材设有薄膜涂层
公开(公告)号：US5952084A
公开(公告)日：1999-09-14
申请号：US804187
申请日：1997-02-21
申请人： Charles-Edward Anderson , Jean-Paul Rousseau
发明人： Charles-Edward Anderson , Jean-Paul Rousseau
IPC分类号： B32B7/02 , B32B9/00 , B32B17/10 , B32B27/18 , C03C17/22 , C03C17/34 , B32B17/06
CPC分类号： C03C17/3452 , C03C17/22 , C03C2217/285 , C03C2217/29 , Y10T428/24942
摘要： The subject of the invention is a transparent substrate (1), in particular a glass substrate, including a coating (6) of one or more thin films on at least one of its faces, comprising at least one A film containing an aluminum fluoride or aluminum oxyfluoride Al.sub.x O.sub.y F.sub.z, with y.gtoreq.0.
摘要翻译：本发明的主题是透明基板（1），特别是玻璃基板，其包括在其至少一个表面上的一个或多个薄膜的涂层（6），其包含至少一个含有氟化铝的A膜或氧氟化铝AlxOyFz，y> / = 0。

10. 发明授权

US09394602B2 Process for manufacturing glazing comprising a porous layer 有权
标题翻译：包括多孔层的制造玻璃的方法
公开(公告)号：US09394602B2
公开(公告)日：2016-07-19
申请号：US14126767
申请日：2012-06-15
申请人： Andriy Kharchenko , Jean-Paul Rousseau , Antje Jung , Christian Bernhard Petersen
发明人： Andriy Kharchenko , Jean-Paul Rousseau , Antje Jung , Christian Bernhard Petersen
IPC分类号： C23C14/34 , C23C14/08 , C23C14/06 , C03C17/00 , C23C14/00 , C23C14/10
CPC分类号： C23C14/083 , C03C17/001 , C03C17/006 , C03C2217/425 , C23C14/0057 , C23C14/06 , C23C14/0605 , C23C14/10 , Y10T428/249969 , Y10T428/24997
摘要： A process for manufacturing glazing including a substrate provided with a coating including a layer consisting of a porous material, includes depositing on the substrate, via a physical vapor deposition (PVD) process in a vacuum chamber, a coating including a layer of a material including an element selected from Si, Ti, Sn, Al, Zr, In or a mixture of at least two of these elements, oxygen and carbon, the layer in addition optionally including hydrogen, heat treatment of the layer thus deposited, under conditions that enable at least one portion of the carbon to be removed and the layer of porous material to be obtained, wherein the deposition is carried out, on the substrate passing through the chamber, by the sputtering of a carbon target, under a reactive plasma atmosphere including a precursor of the element or elements.
摘要翻译：一种用于制造玻璃的方法，其包括具有包括由多孔材料构成的层的涂层的基底，包括通过真空室中的物理气相沉积（PVD）工艺在基底上沉积包括包含选自Si，Ti，Sn，Al，Zr，In或这些元素中的至少两个的混合物，氧和碳，该层另外任选地包括氢，在如此沉积的层上进行热处理，将待除去的碳的至少一部分和要获得的多孔材料层，其中通过溅射碳靶，在穿过所述室的基板上进行沉积，所述反应性等离子体气氛包括元素或元素的前体。

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