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    • 5. 发明申请
    • Multi-Bit Data Converter Using Data Weight Averaging
    • 使用数据权重平均的多位数据转换器
    • US20080079615A1
    • 2008-04-03
    • US11844132
    • 2007-08-23
    • Sang-Ho KIM
    • Sang-Ho KIM
    • H03M1/00
    • H03M1/0665H03M1/747H03M3/502
    • A method for converting data includes matching dynamic elements by repeatedly selecting a portion of unit elements among N unit elements according to data and a circulation direction. An existence of a tone generation possibility is determined by comparing a present pointer position with a previous pointer position and by comparing present data with previous data. At least one of the present pointer position and the circulation direction is changed based on the existence of the tone generation possibility. The present pointer position and the present data are stored or the changed pointer position and the present data are stored. Unit elements are sequentially selected by the present data from the stored pointer position in the circulation direction or the changed circulation direction. The present pointer position is moved by the present data in the circulation direction or the changed circulation direction.
    • 用于转换数据的方法包括通过根据数据和循环方向重复地选择N个单元中的单位元素的一部分来匹配动态元素。 通过将当前指针位置与先前的指针位置进行比较并通过将当前数据与先前数据进行比较来确定音调生成可能性的存在。 本指针位置和循环方向中的至少一个基于音调生成可能性的存在而改变。 存储当前指针位置和当前数据,或存储改变的指针位置和当前数据。 通过来自循环方向或改变的循环方向上存储的指示器位置的当前数据顺序地选择单位元素。 当前数据在循环方向或改变的循环方向上移动当前指针位置。
    • 8. 发明申请
    • SEMICONDUCTOR DEVICE HAVING BOX-SHAPED CYLINDRICAL STORAGE NODES AND FABRICATION METHOD THEREOF
    • 具有盒形储存仓的半导体器件及其制造方法
    • US20080035976A1
    • 2008-02-14
    • US11840569
    • 2007-08-17
    • Sang-Ho KIM
    • Sang-Ho KIM
    • H01L27/108
    • H01L28/91H01L21/76816H01L27/10852
    • A method of forming box-shaped cylindrical storage nodes includes forming an interlayer insulating layer on a semiconductor substrate. Buried contact plugs are formed to penetrate the interlayer insulating layer. A molding layer and a photoresist layer are then sequentially formed on the substrate. Using a first phase shift mask having line-and-space patterns, the photoresist layer is exposed, forming first exposure regions. Using a second phase shift mask having line-and-space patterns, the photoresist layer is exposed again, forming second exposure regions intersecting the first exposure regions. The photoresist layer is then developed, forming a photoresist pattern having rectangular-shaped openings formed at intersections of the first and the second exposure regions. The molding layer is etched using the photoresist pattern as an etch mask, forming storage node holes exposing the buried contact plugs. Storage nodes are formed inside the storage node holes.
    • 一种形成盒形圆柱形存储节点的方法包括在半导体衬底上形成层间绝缘层。 埋入的接触塞形成为穿透层间绝缘层。 然后在基板上依次形成成型层和光致抗蚀剂层。 使用具有线间距图案的第一相移掩模,曝光光致抗蚀剂层,形成第一曝光区域。 使用具有线间距图案的第二相移掩模,再次暴露光致抗蚀剂层,形成与第一曝光区域相交的第二曝光区域。 然后显影光致抗蚀剂层,形成在第一和第二曝光区域的交叉处形成的具有矩形开口的光致抗蚀剂图案。 使用光致抗蚀剂图案作为蚀刻掩模蚀刻成型层,形成暴露埋入的接触塞的存储节点孔。 存储节点形成在存储节点孔内。