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    • 8. 发明授权
    • Polarizing photochromic articles
    • 极化光致变色制品
    • US08545015B2
    • 2013-10-01
    • US13296867
    • 2011-11-15
    • Anil KumarRachael L. YoestChenguang LiDelwin S. JacksonHenry Nguyen
    • Anil KumarRachael L. YoestChenguang LiDelwin S. JacksonHenry Nguyen
    • G02C3/00G02B5/30G02B5/23
    • C09B57/00C09B67/0083C09K19/60G02B5/23G02F1/1335
    • Provided are photochromic articles including a substrate, a primer layer that includes a first photochromic compound, and a photochromic-dichroic layer over the primer layer that includes a photochromic-dichroic compound. The first photochromic compound and the photochromic-dichroic compound each are selected such that the photochromic-dichroic compound has an unactivated state terminal minimum absorbance wavelength that is less than or equal to the unactivated state terminal minimum absorbance of the underlying first photochromic compound. The present invention also relates to such photochromic articles that further include a topcoat layer over the photochromic-dichroic layer, the topcoat layer including a second photochromic compound that has an unactivated state terminal minimum absorbance wavelength that is less than the unactivated state terminal minimum absorbance wavelength of the underlying photochromic-dichroic compound.
    • 本发明提供的光致变色制品包括基材,包含第一光致变色化合物的底漆层和包含光致变色二色性化合物的底漆层上的光致变色二色性层。 选择第一光致变色化合物和光致变色二色性化合物,使得光致变色二色性化合物具有小于或等于下层第一光致变色化合物的未活化状态末端最小吸光度的未活化状态末端最小吸光度波长。 本发明还涉及这样的光致变色制品,其进一步包括在光致变色二色层上面的顶涂层,该顶涂层包括第二光致变色化合物,该第二光致变色化合物具有小于未活化状态末端最小吸光度波长的未活化状态末端最小吸收波长 的底色光致变色二色性化合物。
    • 10. 发明申请
    • Voltage stabilizer memory module
    • 稳压器内存模块
    • US20070280010A1
    • 2007-12-06
    • US11442818
    • 2006-05-30
    • Henry NguyenNgoc Le
    • Henry NguyenNgoc Le
    • G11C7/00G11C5/14
    • G11C5/14G11C5/04G11C11/4074
    • A memory module is disclosed. The memory module comprises a voltage supply; a memory interface coupled to the voltage supply; a plurality of memory components; and a voltage stabilizer converter (VSC) coupled to the memory interface and to the plurality of memory components, the VSC for ensuring that the plurality of memory components operate at their optimum performance level. A voltage stabilizer memory module (VSMM) in accordance with the present invention includes a printed circuit board (PCB) that contains memory chips, discrete components, a voltage stabilizer converter, and other related components. The voltage stabilizer converter uses system voltage supply as its input and its output is the voltage supply for the DRAM components. Accordingly, the VSSM is more adaptable, more stable and has better performance than conventional memory modules.
    • 公开了一种存储器模块。 存储器模块包括电压源; 耦合到电压源的存储器接口; 多个存储器组件; 以及耦合到存储器接口和多个存储器组件的稳压器转换器(VSC),VSC用于确保多个存储器组件以其最佳性能水平运行。 根据本发明的稳压器存储器模块(VSMM)包括包含存储器芯片的印刷电路板(PCB),分立元件,稳压器转换器和其它相关元件。 稳压器转换器采用系统电压作为输入,其输出为DRAM组件的电源。 因此,VSSM比传统的内存模块更适应,更稳定,性能更好。