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1. 发明申请

US20100308439A1 DUAL WAVELENGTH EXPOSURE METHOD AND SYSTEM FOR SEMICONDUCTOR DEVICE MANUFACTURING 有权
标题翻译：双波长曝光方法和半导体器件制造系统
公开(公告)号：US20100308439A1
公开(公告)日：2010-12-09
申请号：US12478426
申请日：2009-06-04
申请人： Heng-Jen LEE , Jui-Chun PENG , I-Hsiung HUANG
发明人： Heng-Jen LEE , Jui-Chun PENG , I-Hsiung HUANG
IPC分类号： H01L29/02 , G03F7/20 , G03B27/42
CPC分类号： G03F7/203 , G03F7/7045 , G03F7/70458 , G03F7/70466
摘要： A dual wavelength exposure system provides for patterning a resist layer formed on a wafer for forming semiconductor devices, using two exposure operations, one including a first radiation having a first wavelength and the other including a second radiation including a second wavelength. Different or the same lithography tool may be used to generate the first and second radiation. For each die formed on the semiconductor device, a critical portion of the pattern is exposed using a first exposure operation that uses a first radiation with a first wavelength and a non-critical portion of the pattern is exposed using a second exposure operation utilizing the second radiation at a second wavelength. The resist material is chosen to be sensitive to both the first radiation having a first wavelength and the second radiation having the second wavelength.
摘要翻译：双波长曝光系统提供了使用两个曝光操作来形成在晶片上形成的晶片上的抗蚀剂层，一个包括具有第一波长的第一辐射，另一个包括包括第二波长的第二辐射。可以使用不同或相同的光刻工具来产生第一和第二辐射。对于形成在半导体器件上的每个裸片，使用第一曝光操作曝光图案的关键部分，该第一曝光操作使用第一波长的第一辐射，并且使用第二曝光操作曝光图案的非关键部分第二波长的辐射。抗蚀剂材料被选择为对具有第一波长的第一辐射和具有第二波长的第二辐射都敏感。

2. 发明申请

US20130293857A1 LITHOGRAPHY APPARATUS HAVING DUAL RETICLE EDGE MASKING ASSEMBLIES AND METHOD OF USE 有权
标题翻译：具有双重边缘屏蔽装置的平面设备及其使用方法
公开(公告)号：US20130293857A1
公开(公告)日：2013-11-07
申请号：US13461500
申请日：2012-05-01
申请人： Tung-Li WU , Chin-Hsiang LIN , Heng-Hsin LIU , Jui-Chun PENG
发明人： Tung-Li WU , Chin-Hsiang LIN , Heng-Hsin LIU , Jui-Chun PENG
IPC分类号： G03B27/50
CPC分类号： G03F7/70725 , G03F7/70066 , G03F7/70283 , G03F7/70341 , G03F7/70641
摘要： A lithography apparatus includes at least two reticle edge masking assemblies (REMAs). The lithography apparatus further includes a light source configured to emit a light beam having a wavelength and a beam separating element configured to divide the light beam into more than one collimated light beam. Each REMA is positioned to receive one of the more than one collimating light beams and each REMA comprises a movable slit for passing the one collimated light beam therethrough. The lithography apparatus further includes at least one mask having a pattern, where the at least one mask is configured to receive light from at least one of the REMA and a projection lens configured to receive light from the at least one mask. A method of using a lithography apparatus is also discussed.
摘要翻译：光刻设备包括至少两个掩模版边缘掩蔽组件（REMA）。光刻设备还包括被配置为发射具有波长的光束的光源和被配置为将光束分成多于一个准直光束的光束分离元件。每个REMA被定位成接收多于一个准直光束中的一个，并且每个REMA包括用于使一个准直光束通过的可移动狭缝。光刻设备还包括具有图案的至少一个掩模，其中所述至少一个掩模被配置为接收来自REMA和配置为接收来自所述至少一个掩模的光的投影透镜中的至少一个的光。还讨论了使用光刻设备的方法。

3. 发明申请

US20130258339A1 WAFER ALIGNMENT MARK SCHEME 审中-公开
标题翻译： WAFER对齐标记方案
公开(公告)号：US20130258339A1
公开(公告)日：2013-10-03
申请号：US13485224
申请日：2012-05-31
申请人： Wei-Hsiang TSENG , Chin-Hsiang LIN , Heng-Hsin LIU , Jui-Chun PENG , Ho-Ping CHEN
发明人： Wei-Hsiang TSENG , Chin-Hsiang LIN , Heng-Hsin LIU , Jui-Chun PENG , Ho-Ping CHEN
IPC分类号： G01B11/02
CPC分类号： G01B11/02 , G03F9/7011 , G03F9/7084 , H01L23/544 , H01L2924/0002 , H01L2924/00
摘要： A wafer alignment apparatus includes a light source, a light detection device, and a rotation device configured to rotate a wafer. The light source is configured to provide light directed to a backside of the wafer. The light detection device is configured to detect reflected light intensity from the backside of the wafer to find a position of at least one wafer alignment mark formed on the back side of the wafer.
摘要翻译：晶片对准装置包括光源，光检测装置和被配置为旋转晶片的旋转装置。光源被配置为提供指向晶片背面的光。光检测装置被配置为从晶片的背面检测反射光强度，以找到形成在晶片的背面上的至少一个晶片对准标记的位置。

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