专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5344793A Formation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formation 失效
标题翻译：通过缺陷增强CoSi2形成在深亚微米MOSFET中形成硅化物结
公开(公告)号：US5344793A
公开(公告)日：1994-09-06
申请号：US26944
申请日：1993-03-05
申请人： Heinrich Zeininger , Christoph Zeller , Udo Schwalke , Uwe Doebler , Wilfried Haensch
发明人： Heinrich Zeininger , Christoph Zeller , Udo Schwalke , Uwe Doebler , Wilfried Haensch
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L29/45 , H01L29/78 , H01L21/283 , H01L21/302
CPC分类号： H01L29/456 , H01L21/28518 , H01L2924/0002 , Y10S148/017 , Y10S148/019 , Y10S438/974
摘要： An method of providing defect enhanced CoSi2 formation and improved silicided junctions in deep submicron MOSFETs. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.
摘要翻译：在深亚微米MOSFET中提供缺陷增强的CoSi2形成和改进的硅化物结的方法。具有扩散窗的硅晶片首先用氢氟酸预清洗。在HF预清洗之后，将硅晶片转移到常规的钴溅射工具，其中通过用低能Ar +离子轰击进行溅射清洗，以形成超浅损伤区域。在溅射清洗之后，并且不从溅射工具移除晶片，在室温下将钴金属沉积在硅晶片上，并且在扩散窗中形成CoSi 2层。

2. 发明授权

US5780929A Formation of silicided junctions in deep submicron MOSFETS by defect enhanced CoSi2 formation 失效
标题翻译：通过缺陷增强CoSi2形成在深亚微米MOSFET中形成硅化物结
公开(公告)号：US5780929A
公开(公告)日：1998-07-14
申请号：US744132
申请日：1996-11-05
申请人： Heinrich Zeininger , Christoph Zeller , Udo Schwalke , Uwe Doebler , Wilfried Haensch
发明人： Heinrich Zeininger , Christoph Zeller , Udo Schwalke , Uwe Doebler , Wilfried Haensch
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L29/45 , H01L29/78 , H01L23/532 , H01L29/43
CPC分类号： H01L29/456 , H01L21/28518 , H01L2924/0002 , Y10S148/017 , Y10S148/019 , Y10S438/974
摘要： Deep submicran mosfets with defect enhanced CoSi2 formation and improved silicided junctions. A silicon wafer having a diffusion window is first precleaned with hydrofluoric acid. After the HF precleaning, the silicon wafer is transferred to a conventional cobalt sputtering tool where it is sputter cleaned by bombardment with low energy Ar+ions so as to form an ultra-shallow damage region. After the sputter cleaning, and without removing the wafer from the sputtering tool, Cobalt metal is deposited on the silicon wafer at room temperature and a CoSi2 layer is formed in the diffusion window.
摘要翻译：具有缺陷增强的CoSi 2形成和改进的硅化物结的深亚微米硅。具有扩散窗的硅晶片首先用氢氟酸预清洗。在HF预清洗之后，将硅晶片转移到常规的钴溅射工具，其中通过用低能Ar +离子轰击进行溅射清洗，以形成超浅损伤区域。在溅射清洗之后，并且不从溅射工具移除晶片，在室温下将钴金属沉积在硅晶片上，并且在扩散窗中形成CoSi 2层。

3. 发明授权

US5268317A Method of forming shallow junctions in field effect transistors 失效
标题翻译：在场效应晶体管中形成浅结的方法
公开(公告)号：US5268317A
公开(公告)日：1993-12-07
申请号：US790953
申请日：1991-11-12
申请人： Udo Schwalke , Christoph Zeller , Heinrich J. Zeininger , Wilfried Hansch
发明人： Udo Schwalke , Christoph Zeller , Heinrich J. Zeininger , Wilfried Hansch
IPC分类号： H01L29/78 , H01L21/225 , H01L21/265 , H01L21/336 , H01L21/44
CPC分类号： H01L29/6659 , H01L21/2257 , H01L21/2652 , H01L29/41783
摘要： A method of making a MOS field effect transistor having shallow source and drain regions with improved breakdown and leakage characteristics includes the step of forming a layer of a metal silicide along a surface of a body of silicon at each side of a gate which is on an insulated from the surface. A high concentration of an impurity of a desired conductivity type is implanted only into the metal silicide layers. A lower concentration of the impurity is then implanted through the metal silicide layers and into the body just beneath the metal silicide layers. The body is then annealed at a temperature which drives the impurities from the metal silicide layer into the body to form the junctions.

4. 发明授权

US4906585A Method for manufacturing wells for CMOS transistor circuits separated by insulating trenches 失效
标题翻译：用于制造由绝缘沟槽分开的CMOS晶体管电路的阱的方法
公开(公告)号：US4906585A
公开(公告)日：1990-03-06
申请号：US197663
申请日：1988-05-20
申请人： Franz Neppl , Carlos-Alb Mazure-Espejo , Christoph Zeller
发明人： Franz Neppl , Carlos-Alb Mazure-Espejo , Christoph Zeller
IPC分类号： H01L21/76 , H01L21/033 , H01L21/308 , H01L21/762 , H01L21/8238 , H01L27/08 , H01L27/092
CPC分类号： H01L21/823892 , H01L21/033 , H01L21/308 , H01L21/76221 , H01L27/0928 , Y10S438/944
摘要： A double well CMOS process wherein the wells are separated by insulating trenches introduced into a semiconductor substrate, the position of the insulating trench along the isotropic under-etching in a silicon oxide layer employed together with a silicon nitride layer used as a masking layer in the implantation of the well which is first implanted. The trench itself is produced by anisotropic etching with silicon oxide masks used in the well implantations as etching masks. The trench width is defined with the isotropic etching and the trench depth is defined by the anisotropic etching. In this method, both well implantations and the trench etching are carried out with only one photo-technique. The implantation of the second well and the trench etching are self-adjusting. As a result, minimum spacings between the active zones are provided, and a space saving design is possible. The method is used in LSI CMOS processes.
摘要翻译：一种双井CMOS工艺，其中通过引入半导体衬底的绝缘沟槽分离阱，绝缘沟槽沿着各向同性底蚀刻在氧化硅层中的位置，与用作掩模层的氮化硅层一起使用植入首先植入的孔。沟槽本身是通过各向异性蚀刻产生的，其中氧化硅掩模用于井注入中作为蚀刻掩模。沟槽宽度由各向同性蚀刻限定，沟槽深度由各向异性蚀刻限定。在这种方法中，两种孔注入和沟槽蚀刻只用一种光学技术进行。第二阱的注入和沟槽蚀刻是自调节的。结果，提供了活动区域之间的最小间距，并且节省空间的设计是可能的。该方法用于LSI CMOS工艺。

5. 发明授权

US06414300B1 Circuit with a sensor and non-volatile memory having a ferroelectric dielectric capacitor 有权
标题翻译：具有传感器的电路和具有铁电介质电容器的非易失性存储器
公开(公告)号：US06414300B1
公开(公告)日：2002-07-02
申请号：US09674628
申请日：2000-02-05
申请人： Carlos Mazure-Espejo , Christoph Zeller
发明人： Carlos Mazure-Espejo , Christoph Zeller
IPC分类号： H01L3100
CPC分类号： G11C11/2259 , G11C11/221 , H01L27/14609
摘要： A circuit includes a sensor delivering a charge, a capacitor non-volatilely storing the charge, and a read and reset circuit reading out the stored charge. The capacitor has further connection terminals connected to the read and reset circuit and in parallel with the sensor terminals, and a ferroelectric storage dielectric intermittently connected to the sensor. The sensor can be a photodiode, a phototransistor, a Hall sensor, or a thermoelement. A switch can be connected between one of the further terminals and one of the sensor terminals. Preferably, the switch is a transistor and a drive circuit drives it. The sensor and the capacitor are formed in a semiconductor body. During a storage procedure, time periods during which the switch is on are coordinated with the sensor and/or capacitor to keep an electrical field present between the further terminals below a maximum value at which the ferroelectric dielectric saturates.
摘要翻译：电路包括传送电荷的传感器，非易失性地存储电荷的电容器以及读出存储的电荷的读取和复位电路。电容器具有连接到读取和复位电路并与传感器端子并联的另外的连接端子，以及间断地连接到传感器的铁电存储介质。传感器可以是光电二极管，光电晶体管，霍尔传感器或热电偶。开关可以连接在其他端子之一和传感器端子之一之间。优选地，开关是晶体管，驱动电路驱动它。传感器和电容器形成在半导体本体中。在存储过程期间，开关导通的时间周期与传感器和/或电容器协调，以使得在另外的端子之间存在低于铁电介质饱和的最大值的电场。

6. 外观设计

USD595321S1 Angle head 有权
标题翻译：角头
公开(公告)号：USD595321S1
公开(公告)日：2009-06-30
申请号：US29293856
申请日：2007-12-14
申请人： Andreas Neumann , Christoph Zeller
设计人： Andreas Neumann , Christoph Zeller

7. 外观设计

USD567830S1 Angle head 有权
标题翻译：角头
公开(公告)号：USD567830S1
公开(公告)日：2008-04-29
申请号：US29225013
申请日：2005-03-09
申请人： Andreas Neumann , Christoph Zeller
设计人： Andreas Neumann , Christoph Zeller

8. 发明授权

US4680809A Light waveguide coupling device 失效
标题翻译：光波导耦合器件
公开(公告)号：US4680809A
公开(公告)日：1987-07-14
申请号：US607014
申请日：1984-05-04
申请人： Hans-Otto Hartkopf , Christoph Zeller
发明人： Hans-Otto Hartkopf , Christoph Zeller
IPC分类号： H04B10/29 , G02F1/00 , G02B6/28 , H04B3/38
CPC分类号： H04B10/29
摘要： A light waveguide coupling device which is inserted at regular intervals along the light wave transmission link with each coupling device for each direction of transmission having a channel having a transducer module for converting optical signals into electrical signals, a regenerating amplifier to amplify the electrical signals and a transducer module for converting electrical signals back into optical signals for further transmission characterized by at least one external electrical connection terminal for each channel so that a remote control element can be connected into the waveguide system at the coupling device.
摘要翻译：一种光波导耦合装置，沿着光波传输链路以规则的间隔插入每个耦合装置，用于每个传输方向，具有一个通道，该通道具有用于将光信号转换为电信号的换能器模块;再生放大器，用于放大电信号;以及用于将电信号转换回到用于进一步传输的光信号的换能器模块，其特征在于用于每个通道的至少一个外部电连接端子，使得遥控元件可以在耦合装置处连接到波导系统中。

9. 外观设计

USD584750S1 Angle head 有权
公开(公告)号：USD584750S1
公开(公告)日：2009-01-13
申请号：US29293852
申请日：2007-12-14
申请人： Andreas Neumann , Christoph Zeller
设计人： Andreas Neumann , Christoph Zeller

10. 发明授权

US06350032B1 Vision testing apparatus 失效
标题翻译：视力检测仪器
公开(公告)号：US06350032B1
公开(公告)日：2002-02-26
申请号：US09500922
申请日：2000-02-09
申请人： Marino Menozzi , Christoph Zeller
发明人： Marino Menozzi , Christoph Zeller
IPC分类号： A61B302
CPC分类号： A61B3/08 , A61B3/032
摘要： A vision test apparatus includes a light occluding casing and viewer connected to the casing which comprises a front lens. A mirror is rotatably mounted to the inside of the casing behind the front lens. An image display is movably mounted to the inside of the casing. An auxiliary lens is movably mounted to the inside of the casing and in alignment between the image display and the mirror whereby an image that is displayed on the image display passes through the auxiliary lens reflects off of the mirror and passes through the front lens.
摘要翻译：视觉测试装置包括连接到壳体的遮光壳体和观察器，其包括前透镜。镜子可旋转地安装在前透镜后面的壳体的内部。图像显示器可移动地安装到壳体的内部。辅助透镜可移动地安装到壳体的内部并且在图像显示器和反射镜之间对准，由此显示在图像显示器上的图像通过辅助透镜从镜子反射并穿过前透镜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式