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1. 发明申请

US20070066139A1 Electronic plug unit 审中-公开
标题翻译：电子插头单元
公开(公告)号：US20070066139A1
公开(公告)日：2007-03-22
申请号：US11513504
申请日：2006-08-31
申请人： Heiko Roeper , Johannes Hankofer , Armin Kohlhase , Elard Kamienski , Harry Hedler
发明人： Heiko Roeper , Johannes Hankofer , Armin Kohlhase , Elard Kamienski , Harry Hedler
IPC分类号： H01R13/648
CPC分类号： H01L23/49575 , H01L23/3107 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/16 , H01L25/18 , H01L2224/16225 , H01L2224/32145 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2225/06558 , H01L2924/00014 , H01L2924/01029 , H01L2924/01079 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , H01L2924/19106 , H01L2924/3025 , H05K3/284 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： An electronic device includes a first semiconductor device and a second semiconductor device mounted over the first semiconductor device. An encapsulation material surrounds the first and second semiconductor devices so that the first and second semiconductor devices are embedded within a molded package. A plug connector extends from the molded package and is electrically coupled to at least one of the first and second semiconductor devices.
摘要翻译：电子设备包括安装在第一半导体器件上的第一半导体器件和第二半导体器件。封装材料围绕第一和第二半导体器件，使得第一和第二半导体器件嵌入在模制封装内。插头连接器从模制封装延伸并且电耦合到第一和第二半导体器件中的至少一个。

2. 发明申请

US20060114724A1 Non-volatile semiconductor memory 失效
标题翻译：非易失性半导体存储器
公开(公告)号：US20060114724A1
公开(公告)日：2006-06-01
申请号：US11000335
申请日：2004-11-30
申请人： Stephan Riedel , Elard Kamienski , Norbert Schulze
发明人： Stephan Riedel , Elard Kamienski , Norbert Schulze
IPC分类号： G11C16/04 , G11C11/34
CPC分类号： H01L27/115 , G11C16/0466 , H01L27/1203
摘要： A non-volatile semiconductor memory includes a substrate having a substrate region, at least one word line, a plurality of non-volatile memory cells arranged in a plurality of sectors and further comprising first wells of a first doping type, electrically insulating elements and switching elements. Each sector comprises a plurality of non-volatile memory cells commonly arranged in a respective first well. The at least one word line electrically connecting memory cells of a group of sectors among the plurality of sectors. The first wells are separated from the substrate region and from each other by means of the electrically insulating elements. Each first well is connected to a respective switching element and the semiconductor memory is constructed such that each first well is biasable to a predetermined potential by means of the respective switching element. Further, a method is provided for operating the above non-volatile semiconductor memory.
摘要翻译：非挥发性半导体存储器包括具有衬底区域，至少一个字线，布置在多个扇区中的多个非易失性存储单元的衬底，并且还包括第一掺杂类型的第一阱，电绝缘元件和开关元素。每个扇区包括通常布置在相应的第一阱中的多个非易失性存储单元。所述至少一个字线电连接所述多个扇区中的一组扇区的存储单元。第一个阱通过电绝缘元件从衬底区域和彼此分离。每个第一阱连接到相应的开关元件，并且半导体存储器被构造成使得每个第一阱通过相应的开关元件可偏置到预定电位。此外，提供了用于操作上述非易失性半导体存储器的方法。

3. 发明申请

US20070221988A1 Charge trapping device and method of producing the charge trapping device 有权
标题翻译：电荷俘获装置及电荷俘获装置的制造方法
公开(公告)号：US20070221988A1
公开(公告)日：2007-09-27
申请号：US11390997
申请日：2006-03-27
申请人： Rainer Hagenbeck , Christoph Ludwig , Mark Isler , Elard Kamienski
发明人： Rainer Hagenbeck , Christoph Ludwig , Mark Isler , Elard Kamienski
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L29/0847 , H01L27/115 , H01L27/11568 , H01L29/66833 , H01L29/792
摘要： A charge-trapping device includes a field effect transistor, which has source and drain regions. The source and drain regions have a dopant concentration profile, which has a gradient each in a vertical and a lateral direction with respect to a surface of a semiconductor substrate. The gradient in the lateral direction towards a depletion region of the transistor is larger than the gradient in the vertical direction towards a well region.
摘要翻译：电荷捕获器件包括具有源极和漏极区域的场效应晶体管。源区和漏区具有掺杂剂浓度分布，其具有相对于半导体衬底的表面的垂直和横向方向的梯度。朝向晶体管的耗尽区域的横向的梯度大于朝向阱区域的垂直方向上的梯度。

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