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    • 8. 发明授权
    • Chemical mechanical polishing (CMP) apparatus and CMP method using the
same
    • 化学机械抛光(CMP)装置和使用其的CMP方法
    • US5837610A
    • 1998-11-17
    • US805659
    • 1997-02-27
    • Byoung-hun LeeJoon-hee Lee
    • Byoung-hun LeeJoon-hee Lee
    • B24B1/00B24B37/00B24B37/20B24B37/24B24B57/02H01L21/304H01L21/306H01L21/3105
    • B24B57/02B24B37/04H01L21/31051
    • A chemical mechanical polishing (CMP) apparatus for planarizing a semiconductor wafer includes a wafer carrier for loading and fixing a semiconductor wafer to be polished and a polishing platen rotating at a constant speed, disposed at a lower portion of the wafer carrier. A polishing pad is provided on an upper surface of the polishing platen, and is in contact with a surface of the semiconductor wafer. A spiral slurry feed line supplies a slurry solution to the polishing pad. An end of the spiral slurry feed line is provided with a plurality of nozzles and the spiral slurry feed line is connected to a deionized water feed line that is opened or closed by a valve. Accordingly, abrasives are prevented from being precipitated, and the slurry solution is uniformly supplied to the semiconductor wafer, to thereby enhance polishing uniformity.
    • 用于平坦化半导体晶片的化学机械抛光(CMP)装置包括用于加载和固定待抛光的半导体晶片的晶片载体和设置在晶片载体的下部的以恒定速度旋转的研磨平板。 抛光垫设置在研磨台板的上表面上并与半导体晶片的表面接触。 螺旋浆料进料管线将浆液提供给抛光垫。 螺旋浆料供给管线的端部设置有多个喷嘴,并且螺旋浆料进料管线连接到由阀打开或关闭的去离子水进料管线。 因此,防止了研磨剂的沉淀,将浆液溶液均匀地供给到半导体晶片,从而提高了研磨均匀性。