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    • 1. 发明申请
    • DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    • 显示装置及其制造方法
    • US20110018000A1
    • 2011-01-27
    • US12813308
    • 2010-06-10
    • Hee-Dong CHOIHye-Young ChoiJun-Min Lee
    • Hee-Dong CHOIHye-Young ChoiJun-Min Lee
    • H01L33/16H01L21/336
    • H01L27/1259H01L27/1214H01L27/1274H01L27/1288
    • Disclosed is a method of fabricating a display device that includes forming a buffer layer; forming a gate electrode of extrinsic polycrystalline silicon, a gate insulating layer, an active layer of intrinsic polycrystalline silicon and an auxiliary active layer of intrinsic amorphous silicon on the buffer layer; forming an ohmic contact layer of extrinsic amorphous silicon and contacting the auxiliary active layer, source and drain electrodes and a data line; patterning a first passivation layer, an insulating interlayer and the gate insulating layer to form a gate contact hole exposing the gate electrode; forming a gate line on the first passivation layer, made of a metal material, and contacting the gate electrode through the gate contact hole; forming a second passivation layer on the gate line; patterning the first and second passivation layers to form a drain contact hole exposing the drain electrode; and forming a pixel electrode on the second passivation layer in the pixel region and contacting the drain electrode through the drain contact hole.
    • 公开了一种制造显示装置的方法,包括形成缓冲层; 在绝缘多晶硅上形成栅电极,栅极绝缘层,本征多晶硅的有源层和本征非晶硅的辅助有源层在缓冲层上; 形成外部非晶硅的欧姆接触层,并与辅助有源层,源极和漏极以及数据线接触; 图案化第一钝化层,绝缘中间层和栅极绝缘层,以形成暴露栅电极的栅极接触孔; 在所述第一钝化层上形成由金属材料制成的栅极线,并且通过所述栅极接触孔与所述栅电极接触; 在栅极线上形成第二钝化层; 图案化第一和第二钝化层以形成暴露漏电极的漏极接触孔; 以及在所述像素区域中的所述第二钝化层上形成像素电极,并且通过所述漏极接触孔与所述漏电极接触。
    • 3. 发明申请
    • ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    • 用于有机电致发光显示装置的阵列基板及其制造方法
    • US20120104399A1
    • 2012-05-03
    • US13285489
    • 2011-10-31
    • Hee-Dong CHOIJin-Chae JeonSeung-Joon JeonHoe-Yong Kim
    • Hee-Dong CHOIJin-Chae JeonSeung-Joon JeonHoe-Yong Kim
    • H01L33/08H01L21/336
    • H01L27/1255H01L27/1288H01L27/3223H01L27/3265
    • A method of fabricating an array substrate for an organic electroluminescent display device includes forming a semiconductor layer, a semiconductor dummy pattern, a first storage electrode and a first gate insulating layer on a substrate; forming a second gate insulating layer on the semiconductor layer and the first storage electrode; forming a gate electrode and a second storage electrode on the second gate insulating layer; forming ohmic contact layers by doping impurities into both sides of the semiconductor layer; forming an inter insulating layer on the gate electrode and the second storage electrode; forming source and drain electrodes and a third storage electrode on the inter insulating layer; forming a passivation layer on the source and drain electrodes and the third storage electrode; forming a first electrode and a fourth storage electrode on the passivation layer; and forming a spacer and a bank on the first electrode.
    • 一种制造有机电致发光显示装置用阵列基板的方法包括在基板上形成半导体层,半导体虚设图形,第一存储电极和第一栅极绝缘层; 在所述半导体层和所述第一存储电极上形成第二栅极绝缘层; 在所述第二栅极绝缘层上形成栅电极和第二存储电极; 通过将杂质掺杂到半导体层的两侧来形成欧姆接触层; 在栅电极和第二存储电极上形成绝缘层; 在绝缘层上形成源电极和漏电极和第三存储电极; 在源电极和漏电极和第三存储电极上形成钝化层; 在钝化层上形成第一电极和第四存储电极; 以及在所述第一电极上形成间隔物和堤岸。
    • 4. 发明申请
    • DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 显示装置及其制造方法
    • US20110315994A1
    • 2011-12-29
    • US13229272
    • 2011-09-09
    • Hee-Dong CHOISeong-Moh SEO
    • Hee-Dong CHOISeong-Moh SEO
    • H01L29/786H01L33/08
    • H01L27/124H01L27/1288H01L29/4908H01L29/66765
    • A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.
    • 一种制造显示装置的方法包括:在基板上形成栅电极,在栅电极上形成栅极绝缘层,在栅极绝缘层上形成有源层,由外部多晶硅制成的栅电极,由内在的 多晶硅; 在所述有源层上形成蚀刻停止层; 在蚀刻停止器上形成彼此间隔开的源极和漏极; 在所述有源层的一侧和所述源极之间以及所述有源层和所述漏电极的相对侧之间形成欧姆接触层; 形成连接到栅电极的栅极线; 并形成跨越栅极线的数据线。
    • 5. 发明申请
    • ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    • 用于显示装置的阵列基板及其制造方法
    • US20110079787A1
    • 2011-04-07
    • US12840941
    • 2010-07-21
    • Hee-Dong CHOI
    • Hee-Dong CHOI
    • H01L33/16
    • H01L27/1222H01L27/12H01L27/124H01L27/1255H01L27/1262H01L27/127H01L27/1274H01L29/4908H01L29/78648
    • An array substrate for a display device includes: a substrate; first and second gate electrodes of impurity-doped polycrystalline silicon on the substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers of intrinsic polycrystalline silicon on the gate insulating layer, the first and second active layers corresponding to the first and second active layers, respectively; an interlayer insulating layer on the first and second active layers and including first to fourth active contact holes, the first and second active contact holes exposing side portions of the first active layer, the third and fourth active contact holes exposing side portions of the second active layer; first and second ohmic contact layers of impurity-doped amorphous silicon on the interlayer insulating layer, the first ohmic contact layer contacting the first active layer through the first and second active contact holes, the second ohmic contact layer contacting the second active layer through the third and fourth active contact hole; first source and drain electrodes on the first ohmic contact layer and second source and drain electrodes on the second ohmic contact layer; a data line on the interlayer insulating layer, the data line connected to the first source electrode; a first passivation layer on the first source and drain electrodes, the second source and drain electrodes and the data line; a gate line on the first passivation layer, the gate line connected to the first gate electrode and crossing the data line to define a pixel region; a second passivation layer on the gate line; and a pixel electrode on the second passivation layer, the pixel electrode connected to the second drain electrode.
    • 用于显示装置的阵列基板包括:基板; 在衬底上的杂质掺杂多晶硅的第一和第二栅电极; 在第一和第二栅电极上的栅极绝缘层; 栅极绝缘层上的本征多晶硅的第一和第二有源层,分别对应于第一和第二有源层的第一和第二有源层; 在所述第一和第二有源层上的层间绝缘层,并且包括第一至第四有源接触孔,所述第一和第二有源接触孔暴露所述第一有源层的侧部,所述第三和第四有源接触孔暴露所述第二有源接触孔的侧部分 层; 所述第一和第二欧姆接触层在所述层间绝缘层上的杂质掺杂非晶硅,所述第一欧姆接触层通过所述第一和第二有源接触孔接触所述第一有源层,所述第二欧姆接触层通过所述第三有源层接触所述第二有源层, 和第四活动接触孔; 第一欧姆接触层上的第一源极和漏极电极以及第二欧姆接触层上的第二源极和漏极电极; 在所述层间绝缘层上的数据线,所述数据线与所述第一源极连接; 第一源极和漏极上的第一钝化层,第二源极和漏极以及数据线; 在第一钝化层上的栅极线,栅极线连接到第一栅电极并与数据线交叉以限定像素区域; 栅极线上的第二钝化层; 以及在所述第二钝化层上的像素电极,所述像素电极连接到所述第二漏电极。
    • 6. 发明申请
    • ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE
    • 有机电致发光器件的阵列基板
    • US20110079783A1
    • 2011-04-07
    • US12890112
    • 2010-09-24
    • Hee-Dong CHOI
    • Hee-Dong CHOI
    • H01L51/50
    • H01L27/124H01L27/3211H01L27/3258H01L27/3262H01L29/78618H01L51/5265H01L2251/558
    • An array substrate for an organic electroluminescent device includes a substrate; first and second gate electrodes; first and second gate insulating layers; first and second active layers; an interlayer insulating layer; first to fourth ohmic contact layers; first and second source electrodes; first and second drain electrodes; a data line connected to the first source electrode; a first power line connected to the second source electrode; a first passivation layer on the first and second source electrodes; a gate line contacting the first gate electrode; a second passivation layer on the gate line; a pixel electrode on the second passivation layer and contacting the second drain electrode; an organic luminescent layer on the pixel electrode; and a reference electrode on the organic luminescent layer, wherein portions of the pixel electrodes respectively contacting the organic luminescent layers in one pixel region and in another one pixel region have different heights from the substrate.
    • 用于有机电致发光器件的阵列衬底包括衬底; 第一和第二栅电极; 第一和第二栅极绝缘层; 第一和第二活性层; 层间绝缘层; 第一至第四欧姆接触层; 第一和第二源电极; 第一和第二漏电极; 连接到第一源电极的数据线; 连接到所述第二源电极的第一电源线; 在第一和第二源电极上的第一钝化层; 与第一栅电极接触的栅极线; 栅极线上的第二钝化层; 所述第二钝化层上的像素电极和所述第二漏电极接触; 像素电极上的有机发光层; 以及有机发光层上的参考电极,其中分别与一个像素区域和另一个像素区域中的有机发光层接触的像素电极的部分与衬底具有不同的高度。
    • 7. 发明申请
    • ARRAY SUBSTRATE FOR ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD OF FABRICATING THE SAME
    • 有机电致发光器件的阵列基板及其制造方法
    • US20120104405A1
    • 2012-05-03
    • US13285584
    • 2011-10-31
    • Hee-Dong CHOIKi-Sul ChoSeong-Moh Seo
    • Hee-Dong CHOIKi-Sul ChoSeong-Moh Seo
    • H01L33/08H01L33/16
    • H01L29/4908H01L27/124H01L27/1255H01L27/3246H01L27/3265H01L2227/323
    • A method of fabricating an array substrate for an organic electroluminescent device includes forming a semiconductor layer of polysilicon in an element region, and a semiconductor pattern of polysilicon in a storage region on a substrate; forming a multiple-layered gate electrode corresponding to a center portion of the semiconductor layer and a first storage electrode corresponding to the semiconductor pattern; performing an impurity-doping to make a portion of the semiconductor layer not covered by the gate electrode into an ohmic contact layer and make the semiconductor pattern into a second storage electrode; forming source and drain electrodes and a third storage electrode corresponding to the first storage electrode; forming a first electrode contacting the drain electrode and a fourth storage electrode corresponding to the third storage electrode.
    • 一种制造有机电致发光器件用阵列基板的方法包括:在元件区域中形成多晶硅的半导体层,以及在基板上的存储区域中形成多晶硅的半导体图案; 形成对应于所述半导体层的中心部分的多层栅电极和对应于所述半导体图案的第一存储电极; 进行杂质掺杂,使未被栅电极覆盖的半导体层的一部分成为欧姆接触层,并使半导体图案成为第二存储电极; 形成源极和漏极;以及对应于第一存储电极的第三存储电极; 形成与所述漏电极接触的第一电极和对应于所述第三存储电极的第四存储电极。