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    • 8. 发明授权
    • Phase shift mask and fabricating method thereof
    • 相移掩模及其制造方法
    • US07332098B2
    • 2008-02-19
    • US11024435
    • 2004-12-30
    • Jun Seok Lee
    • Jun Seok Lee
    • B44C1/22G03F1/00
    • G03F1/32G03F1/28
    • The present invention provides a phase shift mask and fabricating method thereof, by which a critical dimension of a semiconductor pattern can be accurately formed in a manner of compensating a boundary step difference between an active area and an insulating layer. The present invention includes a transparent substrate and at least two halftone layers on the transparent substrate to have light transmittance lower than that of the transparent substrate, each comprising front and rear parts differing in thickness from each other.
    • 本发明提供了一种相移掩模及其制造方法,通过该相移掩模及其制造方法,可以以补偿有源区和绝缘层之间的边界阶跃差的方式精确地形成半导体图案的临界尺寸。 本发明包括透明基板和透明基板上的至少两个半色调层,其透光率低于透明基板的透光率,每个半透明层包括彼此厚度不同的前部和后部。
    • 10. 发明授权
    • Phase shifting photomask fabrication method
    • 相移光掩模制造方法
    • US5932378A
    • 1999-08-03
    • US41600
    • 1998-03-13
    • Jun Seok Lee
    • Jun Seok Lee
    • G03F1/29G03F1/30G03F1/36G03F1/68H01L21/027G03F9/00
    • G03F1/30G03F1/29
    • A phase shifting photomask fabrication method includes the steps of forming a recess in an upper surface of a transparent substrate having a depth sufficient to shift a phase of light, forming an opaque layer on the transparent substrate including the recess, forming a first patterning layer having a plurality of openings on the opaque layer, forming a plurality of side wall spacers on each side wall of the first patterning layer, etching the opaque layer by using the side wall spacers and exposing the transparent substrate, forming a second patterning layer on the exposed transparent substrate exposing a portion of the transparent substrate by selectively etching portions covered by the first patterning layer and the opaque layer, etching the exposed transparent substrate to a depth sufficient to effect a phase shift, and removing the side wall spacers and the second patterning layer. This method eliminates a micro loading effect by separately forming a wider main opening pattern unit and a narrower sub-opening pattern unit, and accurately controls the phase shift, improving reliability of the photomask.
    • 相移光掩模制造方法包括以下步骤:在透明基板的上表面中形成具有足以移动相位的深度的凹部,在包括凹部的透明基板上形成不透明层,形成具有 在所述不透明层上的多个开口,在所述第一图案化层的每个侧壁上形成多个侧壁间隔物,通过使用所述侧壁间隔物来蚀刻所述不透明层并暴露所述透明基板,在所述暴露的所述第二图案形成层上形成第二图案形成层 透明基板通过选择性地蚀刻由第一图案化层和不透明层覆盖的部分来暴露透明基板的一部分,将暴露的透明基板蚀刻到足以实现相移的深度,以及去除侧壁间隔物和第二图案形成层 。 该方法通过分开形成更宽的主开口图案单元和较窄的子开口图案单元来消除微加载效应,并且精确地控制相移,提高光掩模的可靠性。