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1. 发明申请

US20070052041A1 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070052041A1
公开(公告)日：2007-03-08
申请号：US10558671
申请日：2004-05-31
申请人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Yoshihiko Kanzawa , Kouji Katayama , Junko Iwanaga
发明人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Yoshihiko Kanzawa , Kouji Katayama , Junko Iwanaga
IPC分类号： H01L29/94
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/78687
摘要： A semiconductor device according to this invention includes: a first insulating layer (11); a first body section (13) including an island-shaped semiconductor formed on the first insulating layer; a second body section (14) including an island-shaped semiconductor formed on the first insulating layer; a ridge-shaped connecting section (15) formed on the first insulating layer to interconnect the first body section and the second body section; a channel region (15a) formed by at least a part of the connecting section in lengthwise direction of the connecting section; a gate electrode (18) formed to cover a periphery of the channel region, with a second insulating layer intervening therebetween; a source region formed to extend over the first body section and a portion of the connecting section between the first body section and the channel region; and a drain region formed to extend over the second body section and a portion of the connecting section between the second body section and the channel region, wherein a semiconductor forming the channel region has a lattice strain.
摘要翻译：根据本发明的半导体器件包括：第一绝缘层（11）; 第一主体部分（13），其包括形成在所述第一绝缘层上的岛状半导体; 包括形成在所述第一绝缘层上的岛状半导体的第二主体部分（14）形成在第一绝缘层上以互连第一主体部分和第二主体部分的脊形连接部分（15）; 由所述连接部的至少一部分在所述连接部的长度方向上形成的通路区域（15a）形成为覆盖沟道区域的周边的栅极电极（18），其间插入有第二绝缘层; 形成为在第一主体部分上延伸的源极区域和在第一主体部分和沟道区域之间的连接部分的一部分; 以及形成为在第二主体部分上延伸的漏极区域和在第二主体部分和沟道区域之间的连接部分的一部分，其中形成沟道区域的半导体具有晶格应变。

2. 发明授权

US07473967B2 Strained channel finFET device 失效
标题翻译：应变通道finFET器件
公开(公告)号：US07473967B2
公开(公告)日：2009-01-06
申请号：US10558671
申请日：2004-05-31
申请人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Yoshihiko Kanzawa , Kouji Katayama , Junko Iwanaga
发明人： Haruyuki Sorada , Takeshi Takagi , Akira Asai , Yoshihiko Kanzawa , Kouji Katayama , Junko Iwanaga
IPC分类号： H01L27/088
CPC分类号： H01L29/785 , H01L29/66795 , H01L29/78687
摘要： A semiconductor device according to this invention includes: a first insulating layer (11); a first body section (13) including an island-shaped semiconductor formed on the first insulating layer; a second body section (14) including an island-shaped semiconductor formed on the first insulating layer; a ridge-shaped connecting section (15) formed on the first insulating layer to interconnect the first body section and the second body section; a channel region (15a) formed by at least a part of the connecting section in lengthwise direction of the connecting section; a gate electrode (18) formed to cover a periphery of the channel region, with a second insulating layer intervening therebetween; a source region formed to extend over the first body section and a portion of the connecting section between the first body section and the channel region; and a drain region formed to extend over the second body section and a portion of the connecting section between the second body section and the channel region, wherein a semiconductor forming the channel region has a lattice strain.
摘要翻译：根据本发明的半导体器件包括：第一绝缘层（11）; 第一主体部分（13），其包括形成在所述第一绝缘层上的岛状半导体; 包括形成在所述第一绝缘层上的岛状半导体的第二主体部分（14）形成在第一绝缘层上以互连第一主体部分和第二主体部分的脊形连接部分（15）; 由连接部的长度方向的至少一部分形成的通道区域（15a）; 形成为覆盖沟道区域的周边的栅极电极（18），其间插入有第二绝缘层; 形成为在第一主体部分上延伸的源极区域和在第一主体部分和沟道区域之间的连接部分的一部分; 以及形成为在第二主体部分上延伸的漏极区域和在第二主体部分和沟道区域之间的连接部分的一部分，其中形成沟道区域的半导体具有晶格应变。

3. 发明申请

US20090002084A1 Oscillator 审中-公开
标题翻译：振荡器
公开(公告)号：US20090002084A1
公开(公告)日：2009-01-01
申请号：US11658615
申请日：2005-07-13
申请人： Akira Inoue , Kouji Katayama , Takeshi Takagi
发明人： Akira Inoue , Kouji Katayama , Takeshi Takagi
IPC分类号： H03B5/12
CPC分类号： H01L27/088 , H01L27/0617 , H01L27/092 , H03B5/1203 , H03B5/1215 , H03B5/1228 , H03K3/0315 , H03K3/0322 , H03K3/354
摘要： In an oscillator of the present invention, each of field-effect transistors (12) and (13) contained as amplifier elements is a buried-channel transistor including: a body region formed on a semiconductor substrate, a source region and a drain region formed on the body region and having a different conductivity type from that of the body region, a buried channel layer formed between the source region and the drain region, and a gate electrode formed above the buried channel layer with a gate insulating film interposed therebetween, wherein body terminals (b12) and (b13) electrically connected to the body region are connected to a power supply wire to which a power supply potential (Vdd) is applied.
摘要翻译：在本发明的振荡器中，包含作为放大器元件的场效应晶体管（12）和（13）中的每一个是埋入沟道晶体管，其包括：形成在半导体衬底上的体区，形成源区和漏区在体区域具有与体区不同的导电类型，形成在源极区域和漏极区域之间的掩埋沟道层，以及在掩埋沟道层上方形成有栅极绝缘膜的栅电极，其中，电连接到主体区域的主体端子（b12）和（b13）连接到施加电源电位（Vdd）的电源线。

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