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    • 4. 发明授权
    • Oxide semiconductor, thin-film transistor and method for producing the same
    • 氧化物半导体,薄膜晶体管及其制造方法
    • US07807515B2
    • 2010-10-05
    • US12086628
    • 2007-05-25
    • Hisato KatoHaruo KawakamiNobuyuki SekineKyoko Kato
    • Hisato KatoHaruo KawakamiNobuyuki SekineKyoko Kato
    • H01L21/00H01L21/84
    • H01L29/78693C01G19/006C01P2006/40H01L29/66969
    • Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.
    • 公开了具有非晶结构的氧化物半导体,其中实现了更高的迁移率和降低的载流子浓度。 还公开了薄膜晶体管,氧化物半导体的制造方法以及薄膜晶体管的制造方法。 具体公开了一种氧化物半导体,其特征在于由以下通式表示的无定形氧化物组成:Inx + 1MZny + 1SnzO(4 + 1.5x + y + 2z)(其中M为Ga或Al,0≦̸ x&nlE ; 1,-0.2≦̸ y≦̸ 1.2,z≥0.4和0.5≦̸(x + y)/ z≦̸ 3)。 该氧化物半导体优选在成膜后在氧化气体气氛中进行热处理。 还具体公开了一种薄膜晶体管,其特征在于包括氧化物半导体。