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1. 发明授权

US06797199B2 Clathrate compounds, manufacture thereof, and thermoelectric materials, thermoelectric modules, semiconductor materials and hard materials based thereon 有权
标题翻译：包覆化合物，其制造方法，热电材料，热电模块，半导体材料和基于其的硬质材料
公开(公告)号：US06797199B2
公开(公告)日：2004-09-28
申请号：US10214857
申请日：2002-08-08
申请人： Haruki Eguchi , Akihiko Suzuki , Satoshi Takahashi , Kaoru Miyahara , Tohru Tanaka , Shigemitsu Kihara , Kazuo Tsumuraya
发明人： Haruki Eguchi , Akihiko Suzuki , Satoshi Takahashi , Kaoru Miyahara , Tohru Tanaka , Shigemitsu Kihara , Kazuo Tsumuraya
IPC分类号： H01B104
CPC分类号： H01L35/14 , C01B33/06 , Y02P20/129 , Y02P20/13
摘要： In high-tech fields such as electronics, the development of new high performance materials which differ from conventional materials has received much attention. An object of the present invention is to provide a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Atoms of an element from group 4B of the periodic table are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table. Suitable manufacturing methods include melt methods and sintering methods, and moreover intercalant intercalation compounds or the like may also be used as raw materials.
摘要翻译：在电子等高科技领域，与传统材料不同的新型高性能材料的开发受到重视。本发明的目的是提供一种可用作热电材料，硬质材料或半导体材料的包合化合物。元素周期表4B的元素的原子形成包合物晶格，然后形成包合物化合物，其中特定的掺杂原子被包封在包合物晶格内，并且包合物晶格的一部分原子被指定的取代原子。合适的掺杂原子是1A组，2A组，3A组，1B组，2B组，3B组，4A组，5A组，6A组和8组的原子，合适的取代原子是来自1A组，2A组， 3A组，1B组，2B组，3B组，5A组，6A组，7A组，5B组，6B组，7B组和8周期。合适的制造方法包括熔融法和烧结方法，而且插入剂插层化合物等也可以用作原料。

2. 发明授权

US06461581B1 Clathrate compounds and manufacturing method thereof 有权
标题翻译：包合物及其制造方法
公开(公告)号：US06461581B1
公开(公告)日：2002-10-08
申请号：US09631176
申请日：2000-08-02
申请人： Haruki Eguchi , Akihiko Suzuki , Satoshi Takahashi , Kaoru Miyahara , Tohru Tanaka , Shigemitsu Kihara , Kazuo Tsumuraya
发明人： Haruki Eguchi , Akihiko Suzuki , Satoshi Takahashi , Kaoru Miyahara , Tohru Tanaka , Shigemitsu Kihara , Kazuo Tsumuraya
IPC分类号： C01B3100
CPC分类号： H01L35/14 , C01B33/06 , Y02P20/129 , Y02P20/13
摘要： The present invention provides a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Silicon or carbon are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. The clathrate lattice is, for example, a silicon clathrate 34 (Si34) mixed lattice of a Si20 cluster including a dodecahedron of Si atoms, and a Si28 cluster including a hexahedron of Si atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table. Suitable manufacturing methods include melt methods and sintering methods, and moreover intercalant intercalation compounds or the like may also be used as raw materials.
摘要翻译：本发明提供可用作热电材料，硬质材料或半导体材料的包合物。硅或碳形成包合物晶格，然后形成包合物化合物，其中特定的掺杂原子被包封在包合物晶格内，并且包合物晶格的一部分原子被指定的取代原子取代。包合物晶格是例如包含Si原子的十二面体的Si 20簇的硅包合物34（Si34）混合晶格和包含Si原子的六面体的Si28簇。合适的掺杂原子是1A组，2A组，3A组，1B组，2B组，3B组，4A组，5A组，6A组和8组的原子，合适的取代原子是来自1A组，2A组， 3A组，1B组，2B组，3B组，5A组，6A组，7A组，5B组，6B组，7B组和8周期。合适的制造方法包括熔融法和烧结方法，而且插入剂插层化合物等也可以用作原料。

3. 发明授权

US5211911A High vanadium austenitic heat resistant alloy 失效
标题翻译：高钒奥氏体耐热合金
公开(公告)号：US5211911A
公开(公告)日：1993-05-18
申请号：US848026
申请日：1992-03-09
申请人： Yozo Hayase , Yoshiatsu Sawaragi , Shigemitsu Kihara , Wate T. Bakker
发明人： Yozo Hayase , Yoshiatsu Sawaragi , Shigemitsu Kihara , Wate T. Bakker
IPC分类号： C22C19/05 , C22C30/00 , F28F21/08
CPC分类号： F28F21/087 , C22C30/00
摘要： High-vanadium austenitic alloys, which are structurally stable and have improved corrosion resistance in wet corrosive environments and high-temperature corrosion resistance in reducing atmosphere, contain Ni by 33.0 to 60.0 weight %, Cr by 23.0 to 28.0 weight %, V by 2.4 to 5.0 weight %, C by 0.10 weight % or less, N by 0.05 weight % or less, Si by 0.35% weight % or less, Al by 0.5 weight % or less, Mn by 1.5% weight % or less, P by 0.020 weight % or less, S by 0.005 weight % or less, and one or more selected from the group consisting of B by 0.0010 to 0.010 weight %, Zr by 0.010 to 0.06 weight %, Ti by 0.03 to 0.50% weight %, and Nb by 0.05 to 1.0 weight %, the balance being Fe and impurities.
摘要翻译：结构稳定，耐湿腐蚀环境下耐蚀性提高，还原气氛耐高温腐蚀性高的钒奥氏体合金，含有33.0〜60.0重量％的Cr，23.0〜28.0重量％，V：2.4〜 5.0重量％，C：0.10重量％以下，N：0.05重量％以下，Si：0.35重量％以下，Al：0.5重量％以下，Mn：1.5重量％以下，P：0.020重量％％以下，S：0.005重量％以下，以及选自B：0.0010〜0.010重量％，Zr：0.010〜0.06重量％，Ti：0.03〜0.50重量％，Nb： 0.05〜1.0重量％，余量为Fe和杂质。

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