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1. 发明申请

US20080169892A1 Permanent Magnet Magnetizing Apparatus And Permanent Magnet Magnetizing Method 有权
标题翻译：永磁磁化装置及永磁磁化法
公开(公告)号：US20080169892A1
公开(公告)日：2008-07-17
申请号：US11886081
申请日：2006-03-16
申请人： Haruhiro Komura , Mikio Kitaoka , Ikuo Ohashi , Teruo Kiyomiya , Sachiko Shinmura , Masutaro Suzuki
发明人： Haruhiro Komura , Mikio Kitaoka , Ikuo Ohashi , Teruo Kiyomiya , Sachiko Shinmura , Masutaro Suzuki
IPC分类号： H01F13/00
CPC分类号： H01F13/003 , H01F41/028 , H02K15/03
摘要： To provide a magnetizing apparatus and magnetizing method in which, even in preparation of a ring-shaped permanent magnet having a narrow magnetization pitch with multiple poles magnetized on an extremely small diameter, sufficient magnetization and high magnetization quality can be achieved and powerful magnetization can be carried out efficiently and quickly at low cost.A permanent magnet magnetizing apparatus includes a heating section 10, a magnetizing section 12 axially disposed as a discrete structure from the heating section 10, and a holding member 22 for holding magnetization object 20 and movable relative to the heating section and the magnetizing section. The magnetization object heated in the heating section is transferred to the magnetizing section and is magnetized therein.
摘要翻译：为了提供一种磁化装置和磁化方法，其中，即使制备具有窄磁化距离的环形永磁体，具有极小磁极的多个磁极，可以实现足够的磁化和高的磁化质量，并且可以实现强大的磁化以低成本高效快速地进行。永磁体磁化装置包括加热部分10，从加热部分10轴向设置为离散结构的磁化部分12和用于保持磁化物体20并相对于加热部分和磁化部分可移动的保持部件22。在加热部分加热的磁化物体被转移到磁化部分并被磁化。

2. 发明授权

US07821365B2 Permanent magnet magnetizing apparatus and permanent magnet magnetizing method 有权
标题翻译：永磁磁化装置和永磁体磁化方法
公开(公告)号：US07821365B2
公开(公告)日：2010-10-26
申请号：US11886081
申请日：2006-03-16
申请人： Haruhiro Komura , Mikio Kitaoka , Ikuo Ohashi , Teruo Kiyomiya , Sachiko Shinmura , Masutaro Suzuki
发明人： Haruhiro Komura , Mikio Kitaoka , Ikuo Ohashi , Teruo Kiyomiya , Sachiko Shinmura , Masutaro Suzuki
IPC分类号： H01F13/00
CPC分类号： H01F13/003 , H01F41/028 , H02K15/03
摘要： To provide a magnetizing apparatus and magnetizing method in which, even in preparation of a ring-shaped permanent magnet having a narrow magnetization pitch with multiple poles magnetized on an extremely small diameter, sufficient magnetization and high magnetization quality can be achieved and powerful magnetization can be carried out efficiently and quickly at low cost.A permanent magnet magnetizing apparatus includes a heating section 10, a magnetizing section 12 axially disposed as a discrete structure from the heating section 10, and a holding member 22 for holding magnetization object 20 and movable relative to the heating section and the magnetizing section. The magnetization object heated in the heating section is transferred to the magnetizing section and is magnetized therein.
摘要翻译：为了提供一种磁化装置和磁化方法，其中，即使制备具有窄磁化距离的环形永磁体，具有极小磁极的多个磁极，可以实现足够的磁化和高的磁化质量，并且可以实现强大的磁化以低成本高效快速地进行。永磁体磁化装置包括加热部分10，从加热部分10轴向设置为离散结构的磁化部分12和用于保持磁化物体20并相对于加热部分和磁化部分可移动的保持部件22。在加热部分加热的磁化物体被转移到磁化部分并被磁化。

3. 发明申请

US20080122565A1 Method of magnetizing into permanent magnet 有权
标题翻译：磁化成永磁体的方法
公开(公告)号：US20080122565A1
公开(公告)日：2008-05-29
申请号：US11821508
申请日：2007-06-22
申请人： Haruhiro Komura , Mikio Kitaoka , Ikuo Ohashi , Teruo Kiyomiya , Sachiko Shinmura , Nobuyuki Sueyoshi
发明人： Haruhiro Komura , Mikio Kitaoka , Ikuo Ohashi , Teruo Kiyomiya , Sachiko Shinmura , Nobuyuki Sueyoshi
IPC分类号： H01F13/00
CPC分类号： H01F41/028 , H01F1/40 , H01F13/003 , H01F41/0253
摘要： A method of magnetizing into a permanent magnet comprises placing magnetizing magnetic field applying means to be adjacent to an object to be magnetized into the permanent magnet, and continuing to apply a magnetizing magnetic field to the object by the magnetizing magnetic field applying means while cooling the object from a temperature of its Curie point or above to a temperature of below the Curie point.
摘要翻译：磁化成永久磁铁的方法包括将磁化磁场施加装置放置在与要被磁化的物体相邻的永磁体中，并且通过磁化磁场施加装置将磁化磁场施加到物体上，同时冷却从居里点以上的温度到低于居里点的温度。

4. 发明授权

US09082546B2 Method of magnetizing into permanent magnet 有权
标题翻译：磁化成永磁体的方法
公开(公告)号：US09082546B2
公开(公告)日：2015-07-14
申请号：US11821508
申请日：2007-06-22
申请人： Haruhiro Komura , Mikio Kitaoka , Ikuo Ohashi , Teruo Kiyomiya , Sachiko Shinmura , Nobuyuki Sueyoshi
发明人： Haruhiro Komura , Mikio Kitaoka , Ikuo Ohashi , Teruo Kiyomiya , Sachiko Shinmura , Nobuyuki Sueyoshi
IPC分类号： H01F41/02 , H01F1/40 , H01F13/00
CPC分类号： H01F41/028 , H01F1/40 , H01F13/003 , H01F41/0253
摘要： A method of magnetizing into a permanent magnet comprises placing magnetizing magnetic field applying means to be adjacent to an object to be magnetized into the permanent magnet, and continuing to apply a magnetizing magnetic field to the object by the magnetizing magnetic field applying means while cooling the object from a temperature of its Curie point or above to a temperature of below the Curie point.
摘要翻译：磁化成永久磁铁的方法包括将磁化磁场施加装置放置在与要被磁化的物体相邻的永磁体中，并且通过磁化磁场施加装置将磁化磁场施加到物体上，同时冷却从居里点以上的温度到低于居里点的温度。

5. 发明授权

US5880621A Analog switch circuit 失效
标题翻译：模拟开关电路
公开(公告)号：US5880621A
公开(公告)日：1999-03-09
申请号：US904341
申请日：1997-07-31
申请人： Ikuo Ohashi
发明人： Ikuo Ohashi
IPC分类号： H01L27/06 , H01L21/8249 , H03K17/16 , H03K17/687 , H03K3/01
CPC分类号： H03K17/162
摘要： Disclosed is an analog switch circuit which has: an analog switch which is composed of a P-channel first transistor and a N-channel second transistor whose drains are connected to each other and whose sources are connected to each other; first and second diodes which are in parallel and reversely to each other connected between a back gate of the first transistor and a high-potential power source; and third and fourth diodes which are in parallel and reversely to each other connected between a back gate of the second transistor and a low-potential power source. Further disclosed is an analog switch circuit which has: an analog switch which is composed of a P-channel first transistor and a N-channel second transistor whose drains are connected to each other and whose sources are connected to each other; and a N-channel third transistor whose gate is connected to a high-potential power source and/or a P-channel fourth transistor whose gate is connected to a low-potential power source; wherein the third transistor and/or the fourth transistor are/is in series connected between an input terminal and an input terminal of the analog switch.
摘要翻译：公开了一种模拟开关电路，其具有：模拟开关，其由P沟道第一晶体管和N沟道第二晶体管组成，漏极彼此连接并且源极彼此连接; 彼此并联并相反地连接在第一晶体管的背栅极和高电位电源之间的第一和第二二极管; 并且彼此并联并相反地连接在第二晶体管的背栅极和低电位电源之间的第三和第四二极管。还公开了一种模拟开关电路，其具有：由P沟道第一晶体管和N沟道第二晶体管组成的模拟开关，漏极彼此连接并且源极彼此连接; 以及N沟道第三晶体管，其栅极连接到高电位电源和/或栅极连接到低电位电源的P沟道第四晶体管; 其中第三晶体管和/或第四晶体管串联连接在模拟开关的输入端和输入端之间。

6. 发明授权

US06316971B1 Comparing and amplifying detector circuit 失效
标题翻译：比较和放大检测电路
公开(公告)号：US06316971B1
公开(公告)日：2001-11-13
申请号：US09397279
申请日：1999-09-16
申请人： Ikuo Ohashi
发明人： Ikuo Ohashi
IPC分类号： H03K522
CPC分类号： H03F3/45183 , G01K7/01 , G05F3/262 , G05F3/30 , H01L2924/0002 , H03F3/505 , H03F2203/45394 , H01L2924/00
摘要： A comparing detector circuit capable of operating regardless of input voltages thereto includes a first pair of transistors to which first and second input signal voltages are input for functioning as a buffer; a second pair of transistors constructing a current mirror circuit in which an input side and an output side are connected to the first pair of transistors via first and second resistors, respectively; and an output transistor to which potential at the output side of the current mirror circuit is applied as an input.
摘要翻译：能够与输入电压无关地操作的比较检测器电路包括第一和第二输入信号电压输入的第一对晶体管，用作缓冲器; 构成电流镜电路的第二对晶体管，其中输入侧和输出侧分别经由第一和第二电阻器连接到第一对晶体管; 以及施加电流镜电路的输出侧的电位的输出晶体管作为输入。

7. 发明授权

US5912496A Semiconductor device having power MOS transistor including parasitic transistor 失效
标题翻译：具有功率MOS晶体管的半导体器件包括寄生晶体管
公开(公告)号：US5912496A
公开(公告)日：1999-06-15
申请号：US795630
申请日：1997-02-06
申请人： Ikuo Ohashi
发明人： Ikuo Ohashi
IPC分类号： H01L21/822 , H01L21/8238 , H01L27/02 , H01L27/04 , H01L27/092 , H03K17/08 , H01L23/62
CPC分类号： H01L27/0251 , H01L2924/0002
摘要： A semiconductor device has a power MOSFET 12 connected between a semiconductor substrate 21 of N-type as an output terminal 15 and a GND terminal 16 connected to a first semiconductor layer 22 formed on the semiconductor substrate 21 and having a gate connected to a first node for controlling the supply of electric current to a load connected between the GND terminal and the output terminal, a control circuit receiving an input signal and controlling an operation of the power MOSFET in response to the input signal, an input terminal provided in a second semiconductor layer 23 of N-type formed on the first semiconductor layer 22, a parasitic transistor 24 connected between the semiconductor substrate and the second semiconductor layer, and having a base connected to the first semiconductor layer, and switching circuit for keeping the parasitic transistor at a non-conductive state.
摘要翻译：半导体器件具有连接在作为输出端子15的N型半导体衬底21和连接到形成在半导体衬底21上的第一半导体层22并且具有连接到第一节点的栅极的GND端子16之间的功率MOSFET 12 用于控制对连接在GND端子和输出端子之间的负载的电流的供应;控制电路，接收输入信号并根据输入信号控制功率MOSFET的工作;第二半导体形成在第一半导体层22上的N型层23，连接在半导体衬底和第二半导体层之间并具有连接到第一半导体层的基极的寄生晶体管24，以及用于将寄生晶体管保持在第一半导体层非导电状态。

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