专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5952705A Monolithically integrated planar semi-conductor arrangement with temperature compensation 失效
标题翻译：具有温度补偿的单片整体平面半导体布置
公开(公告)号：US5952705A
公开(公告)日：1999-09-14
申请号：US981985
申请日：1998-01-09
申请人： Hartmut Michel , Christian Pluntke , Alfred Goerlach
发明人： Hartmut Michel , Christian Pluntke , Alfred Goerlach
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L27/02 , H01L27/06 , H01L29/06 , H01L29/40 , H01L29/732 , H01L29/78 , H01L29/70 , H01L29/735
CPC分类号： H01L29/402 , H01L27/0211 , H01L29/7813
摘要： A semiconductor, where a region is introduced into a semiconductor substrate and, together with this substrate, forms a p-n junction. Provision is made in the vicinity of the space charge region being formed for a covering electrode and a heavily doped region. The covering electrode is coupled to a voltage divider, through which the potential of the covering electrode is adjusted with temperature compensation.
摘要翻译： PCT No.PCT / DE96 / 01073 Sec。 371日期1998年1月9日 102（e）1998年1月9日PCT PCT 1996年6月18日PCT公布。出版物WO97 / 04486 日期1997年2月6日一种半导体，其中将区域引入半导体衬底中，并与该衬底一起形成p-n结。在为覆盖电极和重掺杂区域形成的空间电荷区域附近进行设置。覆盖电极耦合到分压器，通过该分压器，覆盖电极的电位通过温度补偿进行调节。

2. 发明授权

US6137124A Integrated vertical semiconductor component 失效
标题翻译：集成垂直半导体元件
公开(公告)号：US6137124A
公开(公告)日：2000-10-24
申请号：US963447
申请日：1997-11-03
申请人： Hartmut Michel , Peter Flohrs , Christian Pluntke , Alfred Goerlach , Anton Mindl , Ning Qu
发明人： Hartmut Michel , Peter Flohrs , Christian Pluntke , Alfred Goerlach , Anton Mindl , Ning Qu
IPC分类号： H01L23/58 , H01L29/80 , H01L29/8605 , H01L29/772 , H01L29/745 , H01L29/808
CPC分类号： H01L29/8605
摘要： A vertical semiconductor component has an integrated switching device, which delivers an electric value correlating with the rear potential. The semiconductor component includes a doping region with a hole, which is free of the doping atoms of the doping region. The hole, when properly sized and contacted, can supply an electric current correlating with the rear potential.
摘要翻译：垂直半导体部件具有集成开关器件，其提供与后部电势相关的电气值。半导体元件包括具有空穴的掺杂区，其没有掺杂区的掺杂原子。该孔在适当的尺寸和接触时可以提供与后方电位相关的电流。

3. 发明授权

US6028470A Integrated circuit for current control of a power transistor 失效
标题翻译：用于功率晶体管电流控制的集成电路
公开(公告)号：US6028470A
公开(公告)日：2000-02-22
申请号：US930669
申请日：1997-10-14
申请人： Hartmut Michel , Christian Pluntke
发明人： Hartmut Michel , Christian Pluntke
IPC分类号： H03K17/14 , H02H5/04 , H02H9/00 , H03K17/08 , H03K17/0812 , H03K17/60 , H02H7/20
CPC分类号： H03K17/08126 , H02H5/042 , H02H9/001 , H03K2017/0806
摘要： An integrated circuit comprising a power transistor and a circuit arrangement. The circuit arrangement is thermally coupled to the power transistor and operates in a temperature-dependent fashion. The integrated circuit includes a pnp or npn transistor with a temperature dependent resistor coupled between the base and emitter of the transistor. The off-state current of the transistor changes as a function of temperature and initiates a change in a base current of the power transistor.
摘要翻译： PCT No.PCT / DE96 / 00689。 371日期1997年10月14日第 102（e）日期1997年10月14日PCT 1996年4月20日PCT PCT。第WO96 / 37955号公报日期：1996年11月28日包括功率晶体管和电路装置的集成电路。电路装置热耦合到功率晶体管并以温度依赖的方式工作。集成电路包括具有耦合在晶体管的基极和发射极之间的温度依赖电阻器的pnp或npn晶体管。晶体管的截止电流随温度的变化而变化，并引发功率晶体管的基极电流的变化。

4. 发明授权

US06597556B1 Circuit for protection from excess temperature 失效
标题翻译：保护温度过高的电路
公开(公告)号：US06597556B1
公开(公告)日：2003-07-22
申请号：US09424478
申请日：2000-06-01
申请人： Hartmut Michel , Christian Pluntke , Manfred Thanner , Bernd Bireckoven
发明人： Hartmut Michel , Christian Pluntke , Manfred Thanner , Bernd Bireckoven
IPC分类号： H02H504
CPC分类号： H03K17/16 , H03K17/0826 , H03K2017/0806
摘要： An integrated circuit having a power transistor and a circuit arrangement functioning in a temperature dependant manner and thermally coupled to the power transitor. The integrated circuit is used to reliably disconnect the power transistor in the event of overheating., particularly in the case of inductive loads, and does not reactivate the power transistor until, for example, an edge change has occurred at the base terminal of the integrated circuit.
摘要翻译：一种具有功率晶体管和电路装置的集成电路，其以温度依赖的方式工作并热耦合到功率转换器。集成电路用于在过热的情况下可靠地断开功率晶体管，特别是在感性负载的情况下，并且不会重新激活功率晶体管，直到例如在集成的基极端子上发生边缘变化电路。

5. 发明授权

US5466959A Semiconductor device for influencing the breakdown voltage of transistors 失效
标题翻译：用于影响晶体管击穿电压的半导体器件
公开(公告)号：US5466959A
公开(公告)日：1995-11-14
申请号：US349720
申请日：1994-12-05
申请人： Alfred Goerlach , Hartmut Michel , Anton Mindl
发明人： Alfred Goerlach , Hartmut Michel , Anton Mindl
IPC分类号： H01L29/73 , H01L21/331 , H01L27/02 , H01L29/732 , H01L29/72 , H01L29/40
CPC分类号： H01L27/0248
摘要： A semiconductor device for influencing the breakdown voltage of a transistor with a surface electrode arranged over a space charge region, separated from the same by an oxide layer. The surface electrode is at a potential, as determined by a voltage divider, between the potentials of the base and collector of the transistor. The surface electrode includes two electrode plates insulated from one another, with the first electrode plate extending over a junction between a highly doped n.sup.+ collector region and a lightly doped n.sup.- collector region, and a junction between the lightly doped n.sup.- collector region and a p-type base region. The second electrode plate is bonded partly over the oxide layer and partly with the highly doped n.sup.+ collector region.
摘要翻译：一种用于影响晶体管的击穿电压的半导体器件，其具有布置在空间电荷区域上的表面电极，其由氧化物层与其隔开。表面电极在晶体管的基极和集电极的电位之间处于由分压器确定的电位。表面电极包括彼此绝缘的两个电极板，第一电极板延伸在高掺杂的n +集电极区域和轻掺杂的n-集电极区域之间的结点处，并且轻掺杂的n-集电极区域和 p型基区。第二电极板部分地结合在氧化物层上，部分地接合高掺杂的n +集电极区域。

6. 发明授权

US5449949A Monolithic integrated semiconductor device 失效
标题翻译：单片集成半导体器件
公开(公告)号：US5449949A
公开(公告)日：1995-09-12
申请号：US74874
申请日：1993-06-11
申请人： Hartmut Michel , Peter Flohrs , Alfred Goerlach
发明人： Hartmut Michel , Peter Flohrs , Alfred Goerlach
IPC分类号： H01L21/331 , H01L27/06 , H01L27/082 , H01L29/06 , H01L29/40 , H01L29/72 , H01L29/73 , H01L29/732 , H01L29/78 , H01L29/861
CPC分类号： H01L27/0825 , H01L29/402 , H01L29/7813
摘要： A monolithic integrated semiconductor is proposed, in which on the main surface of a monolithically integrated n-p-n transistor or p-n-p transistor, a cover electrode (D1) is mounted for internal voltage limitation, covering only a single junction region between a highly doped zone (5) and the weakly doped substrate (1). An adjacent highly doped zone (4) is not covered by the cover electrode (D1). By connecting the metal cover electrode (D1) to the pickup (12) for a voltage divider (R1, R2), a breakdown voltage can be adjusted that is higher than the sum of the depletion breakdown voltage and the enhancement breakdown voltage.
摘要翻译： PCT No.PCT / DE91 / 00909 Sec。 371日期：1993年6月11日 102（e）日期1993年6月11日PCT 1991年11月19日PCT公布。公开号WO92 / 10855 日期：1992年6月25日。提出了一种单片集成半导体，其中在单片集成的npn晶体管或pnp晶体管的主表面上安装用于内部电压限制的覆盖电极（D1），仅覆盖高掺杂区（5）和弱掺杂衬底（1）。相邻的高掺杂区（4）不被覆盖电极（D1）覆盖。通过将金属盖电极（D1）连接到用于分压器（R1，R2）的拾取器（12），可以调节高于耗尽击穿电压和增强击穿电压之和的击穿电压。

7. 发明授权

US06445561B1 Circuit arrangement, in particular for triggering an ignition end stage 失效
标题翻译：电路布置，特别是用于触发点火结束阶段
公开(公告)号：US06445561B1
公开(公告)日：2002-09-03
申请号：US09462393
申请日：2000-04-28
申请人： Hartmut Michel
发明人： Hartmut Michel
IPC分类号： H01H4726
CPC分类号： F02P9/002 , H01L27/0647 , H03K17/08146 , H03K17/64
摘要： A circuit arrangement, in particular for triggering an ignition output stage, having a power switching transistor and a switchable freewheeling circuit or an auxiliary channel. The freewheeling circuit or the auxiliary channel may be constituted by a triggerable four-layer element.
摘要翻译：特别是用于触发点火输出级的电路装置，具有功率开关晶体管和可切换续流电路或辅助通道。续流电路或辅助通道可以由可触发的四层元件构成。

8. 发明授权

US4539492A Darlington transistor circuit 失效
标题翻译：达林顿晶体管电路
公开(公告)号：US4539492A
公开(公告)日：1985-09-03
申请号：US464503
申请日：1983-01-27
申请人： Hartmut Michel , Lothar Gademann , Erich Jesse
发明人： Hartmut Michel , Lothar Gademann , Erich Jesse
IPC分类号： H03K17/04 , H03K17/0412 , H03K17/14 , H03K17/60 , H03K17/615 , H03K3/26 , H03K3/313
CPC分类号： H03K17/615 , H03K17/04126
摘要： A three-stage Darlington transistor circuit having a power transistor (T.sub.3), a driver transistor (T.sub.2) and an initial transistor (T.sub.1) is provided. The collectors of these three transistors are connected with one another, while the emitter of the driver transistor (T.sub.2) is connected to the base of the power transistor (T.sub.3), and the emitter of the initial transistor (T.sub.1) is connected to the base of the driver transistor (T.sub.2). Connected to the base of the driver transistor (T.sub.2) is a series circuit comprising a first resistor (R.sub.1), which is connected directly to this base, and a Zener diode (ZD), the anode of the Zener diode being connected with the resistor (R.sub.1); and a second resistor (R.sub.2); the second resistor (R.sub.2) is connected in parallel to the emitter-base path of the driver transistor (T.sub.2). Upon the attainment of a predetermined voltage at the cathode of the Zener diode (ZD), the driver transistor (T.sub.2) and the power transistor (T.sub.3) are switched ON. The temperature dependency of this switch-on voltage can be adjusted by varying the resistance ratio of these two resistors (R.sub.1, R.sub.2).
摘要翻译： PCT No.PCT / DE82 / 00045 Sec。 371日期1983年1月27日 102（e）日期1983年1月27日PCT提交1982年3月5日PCT公布。出版物WO82 / 04509 日期为1982年12月23日。提供具有功率晶体管（T3），驱动晶体管（T2）和初始晶体管（T1）的三阶段达林顿晶体管电路。这三个晶体管的集电极彼此连接，而驱动晶体管（T2）的发射极连接到功率晶体管（T3）的基极，并且初始晶体管（T1）的发射极连接到基极的驱动晶体管（T2）。连接到驱动晶体管（T2）的基极的是串联电路，其包括直接连接到该基极的第一电阻器（R1）和齐纳二极管（ZD），齐纳二极管的阳极与电阻器（R1）; 和第二电阻器（R2）; 第二电阻器（R2）并联连接到驱动晶体管（T2）的发射极 - 基极路径。当在齐纳二极管（ZD）的阴极达到预定电压时，驱动晶体管（T2）和功率晶体管（T3）导通。可以通过改变这两个电阻（R1，R2）的电阻比来调节该接通电压的温度依赖性。

9. 发明授权

US5418411A Voltage limiter for transistor circuit 失效
标题翻译：晶体管电路的限压器
公开(公告)号：US5418411A
公开(公告)日：1995-05-23
申请号：US39214
申请日：1993-04-05
申请人： Hartmut Michel , Ulrich Nelle , Anton Mindl , Bernd Bireckoven
发明人： Hartmut Michel , Ulrich Nelle , Anton Mindl , Bernd Bireckoven
IPC分类号： H03G11/00 , H03K5/00 , H03B1/04
CPC分类号： H03G11/002
摘要： The invention relates to a voltage limiter for a transistor circuit with semiconductors (T.sub.20 and T.sub.21) in the arrangement of a plurality of successive amplifier stages, with a reference element (Zener diode Z.sub.20) and with at least one voltage divider arrangement (voltage divider R.sub.21 /R.sub.22). In accordance with the invention, the reference element (Zener diode Z.sub.20) is disposed downstream of the triggering circuit of the first stage or even closer at the output of the voltage limiter circuit for reducing the oscillation tendency.
摘要翻译：本发明涉及一种用于具有半导体（T20和T21）的晶体管电路的电压限制器，其中多个连续放大器级具有参考元件（齐纳二极管Z20）和至少一个分压器装置（分压器R21 / R22）。根据本发明，参考元件（齐纳二极管Z20）设置在第一级的触发电路的下游，或者甚至更靠近限流器电路的输出端，用于降低振荡趋势。

10. 发明授权

US3949722A Semiconductor controlled ignition systems for internal combustion engines 失效
标题翻译：用于内燃机的半导体控制点火系统
公开(公告)号：US3949722A
公开(公告)日：1976-04-13
申请号：US491047
申请日：1974-07-23
申请人： Hans Linstedt , Helmut Roth , Gotz Bundschuh , Gerd Hohne , Bernd Bodig , Gert Strelow , Peter Schmidt , Gerhard Sohner , Herman Roozenbeek , Hartmut Michel
发明人： Hans Linstedt , Helmut Roth , Gotz Bundschuh , Gerd Hohne , Bernd Bodig , Gert Strelow , Peter Schmidt , Gerhard Sohner , Herman Roozenbeek , Hartmut Michel
IPC分类号： F02P3/04 , F02P3/045 , F02P3/055 , F02P3/02
CPC分类号： F02P3/0552
摘要： To improve the operation of semiconductor control ignition systems under widely varying supply voltage conditions, a voltage divider having a division tap point is connected in parallel to the main switching part of the switching transistor of the ignition system, and a voltage breakdown element, typically a Zener diode is connected from the tap point to the control electrodes of the semiconductor switch to provide an additional control voltage thereto if the voltage at the tap point exceeds a value leading to breakdown of the breakdown device (Zener diode); the main control circuit for the main ignition transistor may be conventional.
摘要翻译：为了改善在不断变化的电源电压条件下的半导体控制点火系统的操作，具有分割抽头点的分压器与点火系统的开关晶体管的主开关部分并联连接，典型地为如果分接点处的电压超过导致击穿器件（齐纳二极管）击穿的值，则齐纳二极管从分接点连接到半导体开关的控制电极，以向其提供额外的控制电压。主点火晶体管的主控制电路可以是常规的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式