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1. 发明授权

US5374454A Method for conditioning halogenated polymeric materials and structures fabricated therewith 失效
标题翻译：用于调节卤化聚合物材料和用其制造的结构的方法
公开(公告)号：US5374454A
公开(公告)日：1994-12-20
申请号：US13652
申请日：1993-02-04
申请人： Harry R. Bickford , Peter J. Duke , Elizabeth Foster , Martin J. Goldberg , Voya R. Markovich , Linda C. Matthew , Donald G. McBride , Terrence R. O'Toole , Stephen L. Tisdale , Alfred Viehbeck
发明人： Harry R. Bickford , Peter J. Duke , Elizabeth Foster , Martin J. Goldberg , Voya R. Markovich , Linda C. Matthew , Donald G. McBride , Terrence R. O'Toole , Stephen L. Tisdale , Alfred Viehbeck
IPC分类号： C08J3/24 , C23C18/20 , C23C18/28 , C25D5/56 , H05K1/03 , H05K3/18 , H05K3/38 , H05K3/42 , B05D1/00
CPC分类号： H05K3/422 , C23C18/208 , C23C18/2093 , C23C18/30 , C25D5/56 , H05K3/381 , H05K1/034 , H05K3/181 , Y10S428/901 , Y10T428/24273 , Y10T428/24322 , Y10T428/24339 , Y10T428/24802 , Y10T428/3154 , Y10T428/31544 , Y10T428/31678
摘要： A halogenated polymeric material is exposed to a reducing agent and/or an electrolyte and applied voltage to render exposed portions capable of being metallized and of being etched. The exposed portions can also be doped to thereby induce electrical conductivity therein. Also, new structures containing a free standing halogenated polymeric-containing layer and electrical conductive pattern thereon are provided.
摘要翻译：将卤化聚合物材料暴露于还原剂和/或电解质和施加的电压以使得能够被金属化并被蚀刻的暴露部分。暴露部分也可以被掺杂从而在其中诱导电导率。此外，提供了含有独立卤代聚合物层和在其上的导电图案的新结构。

2. 发明授权

US5874154A Structure including a partially electrochemically reduced halogenated polymeric containing layer and an electrically conductive pattern 失效
标题翻译：包括部分电化学还原的卤化聚合物包含层和导电图案的结构
公开(公告)号：US5874154A
公开(公告)日：1999-02-23
申请号：US711865
申请日：1996-09-12
申请人： Harry Randall Bickford , Peter J. Duke , Elizabeth Foster , Martin Goldberg , Voya Rista Markovich , Linda Matthew , Donald G. McBride , Terrence Robert O'Toole , Stephen Leo Tisdale , Alfred Viehbeck
发明人： Harry Randall Bickford , Peter J. Duke , Elizabeth Foster , Martin Goldberg , Voya Rista Markovich , Linda Matthew , Donald G. McBride , Terrence Robert O'Toole , Stephen Leo Tisdale , Alfred Viehbeck
IPC分类号： C08J3/24 , C23C18/20 , C23C18/28 , C25D5/56 , H05K1/03 , H05K3/18 , H05K3/38 , H05K3/42 , B32B3/24 , B32B15/08
CPC分类号： H05K3/422 , C23C18/208 , C23C18/2093 , C23C18/30 , C25D5/56 , H05K3/381 , H05K1/034 , H05K3/181 , Y10S428/901 , Y10T428/24273 , Y10T428/24322 , Y10T428/24339 , Y10T428/24802 , Y10T428/3154 , Y10T428/31544 , Y10T428/31678
摘要： A structure including a halogenated polymeric-containing layer. At least a portion of a surface of the halogenated polymeric-containing layer is electrochemically reduced. An electrically conductive pattern is provided over at least a portion of the electrochemically reduced portion of the halogenated polymeric-containing layer.
摘要翻译：包含含卤代聚合物层的结构。含卤化聚合物层的至少一部分表面被电化学还原。在含卤化聚合物层的电化学还原部分的至少一部分上提供导电图案。

3. 发明授权

US5709906A Method for conditioning halogenated polymeric materials and structures fabricated therewith 失效
标题翻译：用于调节卤化聚合物材料和用其制造的结构的方法
公开(公告)号：US5709906A
公开(公告)日：1998-01-20
申请号：US490930
申请日：1995-06-16
申请人： Harry Randall Bickford , Peter J. Duke , Elizabeth Foster , Martin Goldberg , Voya Rista Markovich , Linda Matthew , Donald G. McBride , Terrence Robert O'Toole , Stephen Leo Tisdale , Alfred Viehbeck
发明人： Harry Randall Bickford , Peter J. Duke , Elizabeth Foster , Martin Goldberg , Voya Rista Markovich , Linda Matthew , Donald G. McBride , Terrence Robert O'Toole , Stephen Leo Tisdale , Alfred Viehbeck
IPC分类号： C08J3/24 , C23C18/20 , C23C18/28 , C25D5/56 , H05K1/03 , H05K3/18 , H05K3/38 , H05K3/42 , B05D3/04
CPC分类号： H05K3/422 , C23C18/208 , C23C18/2093 , C23C18/30 , C25D5/56 , H05K3/381 , H05K1/034 , H05K3/181 , Y10S428/901 , Y10T428/24273 , Y10T428/24322 , Y10T428/24339 , Y10T428/24802 , Y10T428/3154 , Y10T428/31544 , Y10T428/31678
摘要： A method of treating a halogenated polymeric-containing substrate including exposing at least portions of the halogenated polymeric-containing substrate to a composition containing a reducing agent and an aprotic solvent selected from the group consisting of nitriles, nitro compounds, amides, esters, carbonates, oxides, sulfo compounds and mixtures thereof. The solvent is free of ethers, amines, ammonia. The composition is prepared by reacting a metal with an organic compound selected from the group consisting of polyaryl compounds, aromatic carbonyl containing compounds, aromatic nitriles, and aromatic heterocyclic nitrogen containing compounds in a reaction solvent that does not react with the metal but permits reaction between the metal and the organic compound to thereby provide the reducing agent. The reducing agent is isolated from the reaction solvent to obtain a reaction product as a solid. The reaction product is added to the aprotic solvent. The treated substrate is contacted with a material to promote adhesion of the material to the treated surface.
摘要翻译：一种处理卤化聚合物基质的方法，包括将含卤代聚合物的底物的至少一部分暴露于含有还原剂和非质子溶剂的组合物，所述组合物选自腈，硝基化合物，酰胺，酯，碳酸酯，氧化物，磺基化合物及其混合物。溶剂不含醚，胺，氨。该组合物是通过在不与金属反应的反应溶剂中使金属与选自由聚芳基化合物，含芳族羰基的化合物，芳族腈和含芳族杂环氮的化合物组成的组中的有机化合物反应而制备的，金属和有机化合物，从而提供还原剂。将还原剂从反应溶剂中分离，得到固体的反应产物。将反应产物加入到非质子溶剂中。经处理的基底与材料接触以促进材料粘附到经处理的表面。

4. 发明授权

US5800858A Method for conditioning halogenated polymeric materials and structures fabricated therewith 失效
公开(公告)号：US5800858A
公开(公告)日：1998-09-01
申请号：US711894
申请日：1996-09-12
申请人： Harry Randall Bickford , Peter J. Duke , Elizabeth Foster , Martin Goldberg , Voya Rista Markovich , Linda Matthew , Donald G. McBride , Terrence Robert O'Toole , Stephen Leo Tisdale , Alfred Viehbeck
发明人： Harry Randall Bickford , Peter J. Duke , Elizabeth Foster , Martin Goldberg , Voya Rista Markovich , Linda Matthew , Donald G. McBride , Terrence Robert O'Toole , Stephen Leo Tisdale , Alfred Viehbeck
IPC分类号： C08J3/24 , C23C18/20 , C23C18/28 , C25D5/56 , H05K1/03 , H05K3/18 , H05K3/38 , H05K3/42 , B05D5/12
CPC分类号： H05K3/422 , C23C18/208 , C23C18/2093 , C23C18/30 , C25D5/56 , H05K3/381 , H05K1/034 , H05K3/181 , Y10S428/901 , Y10T428/24273 , Y10T428/24322 , Y10T428/24339 , Y10T428/24802 , Y10T428/3154 , Y10T428/31544 , Y10T428/31678
摘要： A halogenated polymeric material is exposed to a reducing agent and/or an electrolyte and applied voltage to render exposed portions capable of being metallized and of being etched. The exposed portions can also be doped to thereby induce electrical conductivity therein. Also, new structures containing a free standing halogenated polymeric-containing layer and electrical conductive pattern thereon are provided.

5. 发明授权

US4088490A Single level masking process with two positive photoresist layers 失效
标题翻译：具有两个正光致抗蚀剂层的单层掩模工艺
公开(公告)号：US4088490A
公开(公告)日：1978-05-09
申请号：US695484
申请日：1976-06-14
申请人： Peter J. Duke , Jerry Leff , Leo C. Liclican , Mark V. Powell
发明人： Peter J. Duke , Jerry Leff , Leo C. Liclican , Mark V. Powell
IPC分类号： G11C11/14 , G03F7/00 , H01F10/18 , H01F10/193 , H01F41/14 , H01F41/34 , H01L21/027 , H01L21/28 , H05K3/10 , H05K3/24 , G03C5/00
CPC分类号： H05K3/243 , G03F7/0035 , H01F41/34 , H01L21/0271 , H01L21/28 , H05K2203/0574 , H05K3/108
摘要： This single level masking process includes the use of two layers of a positive photoresist. A pattern is formed in the first layer of photoresist. This photoresist pattern is heated and polymerized to a degree which permits it to be resistant to attack when covered with a second layer of the same positive photoresist, that is, the first photoresist pattern will maintain its integrity. After the heat treatment, the first layer pattern is substantially insensitive to actinic radiation and is easily stripped with conventional solvents. A pattern is formed in a second layer of photoresist that is different from the pattern formed in the first layer. After a first metal is deposited on portions of the substrates exposed in the second layer pattern, the second layer pattern is removed. A second metal is deposited on the portions of the substrate exposed in the first layer pattern and then that pattern is removed.
摘要翻译：该单级屏蔽工艺包括使用两层正性光致抗蚀剂。在第一层光致抗蚀剂中形成图案。该光致抗蚀剂图案被加热并聚合到一定程度，当其被同一正性光致抗蚀剂的第二层覆盖时，即可以抵抗侵蚀，即第一光致抗蚀剂图案将保持其完整性。在热处理之后，第一层图案对光化辐射基本上不敏感，并且容易用常规溶剂剥离。在与第一层中形成的图案不同的第二层光致抗蚀剂中形成图案。在第一金属沉积在以第二层图案曝光的基板的部分上之后，第二层图案被去除。第二金属沉积在以第一层图案曝光的基板的部分上，然后去除图案。

6. 发明授权

US5108562A Electrolytic method for forming vias and through holes in copper-invar-copper core structures 失效
标题翻译：用于在铜 - 铜 - 铜芯结构中形成通孔和通孔的电解方法
公开(公告)号：US5108562A
公开(公告)日：1992-04-28
申请号：US651175
申请日：1991-02-06
申请人： Peter J. Duke , Leann G. Keim , Krystyna W. Semkow
发明人： Peter J. Duke , Leann G. Keim , Krystyna W. Semkow
IPC分类号： C25F3/02 , C25F3/12 , H01L21/3063 , H01L21/48 , H01L23/14 , H05K3/00 , H05K3/06 , H05K3/07 , H05K3/44
CPC分类号： C25F3/12 , H01L21/4803 , H01L23/142 , H05K3/44 , H01L2924/0002 , H05K2201/0338 , H05K2201/068 , H05K2203/0323 , H05K2203/0361 , H05K2203/1184 , H05K3/062 , H05K3/067 , H05K3/07
摘要： Disclosed is a method of fabricating a microelectronic package having least one layer formed of a Cu-Invar-Cu core encapsulated between a pair of dielectric films. The package is intended to carry surface circuitization on an external surface, with internal circuitization from the surface circuitization passing through the core. The method includes contacting the copper within the Cu-Invar-Cu core with a copper etching aqueous solution of a strong base and a strong oxidizing acid, while maintaining the copper anodic. This electrolytically converts the copper to soluble copper oxides. In a separate step the Invar of the Cu-Invar-Cu core is electrolytically etched with an Invar etching aqueous solution of sodium chloride. This step is carried out under conditions to electrolytically form soluble iron and nickel chlorides while passivating the copper.

7. 发明授权

US5098533A Electrolytic method for the etch back of encapsulated copper-Invar-copper core structures 失效
标题翻译：封装的铜 - 堇青铜核心结构的回蚀电解方法
公开(公告)号：US5098533A
公开(公告)日：1992-03-24
申请号：US651073
申请日：1991-02-06
申请人： Peter J. Duke , Krystyna W. Semkow
发明人： Peter J. Duke , Krystyna W. Semkow
IPC分类号： C25F3/02 , H01L21/48 , H05K3/06 , H05K3/07 , H05K3/44
CPC分类号： H05K3/44 , H01L21/4803 , H01L21/486 , H05K2201/0338 , H05K2201/068 , H05K2203/0285 , H05K2203/0323 , H05K2203/1184 , H05K3/062 , H05K3/07 , H05K3/445
摘要： Disclosed is a method of fabricating a microelectronic package having least one layer formed of a copper-Invar-copper core encapsulated between a pair of dielectric films. The method includes exposing a copper-Invar-copper surface of the copper-Invar-copper core, for example, exposing an edge of the copper-Invar-copper core or drilling a whole through the layer to expose internal copper-Invar-copper. The copper-Invar-copper is then shaped, that is, back etched. This is an electrolytic process where the package is immersed in a substantially pH neutral electrolyte including a counter- electrode. A preferred electrolyte is an aqueous alkali metal nitrate solution. The electrolyte wets the exposed surface of said copper-Invar-copper core. The exposed surface of the copper-Invar-copper core is rendered anodic with respect to the counter-electrode and an electrical potential is applied therebetween. This results in electrochemically etching and shaping the copper-Invar-copper surface.
摘要翻译：公开了一种制造微电子封装的方法，该微电子封装具有封装在一对电介质膜之间的由铜 - 英巴铜芯形成的至少一层。该方法包括将铜 - Inv铜 - 铜芯的铜 - Inv铜 - 铜表面暴露出来，例如，暴露出铜 - Inv铜 - 铜芯的边缘，或者穿过该层进行整体钻孔以暴露内部铜 - Inv铜。然后将铜 - 殷铜铜成形，即后蚀刻。这是一种电解方法，其中将封装浸入包括反电极的基本上pH中性的电解质中。优选的电解质是碱金属硝酸盐水溶液。电解液润湿所述铜 - Inv铜 - 铜芯的暴露表面。铜 - 铱铜芯的暴露表面相对于反电极呈阳极，并且在其间施加电位。这导致电化学蚀刻和成形铜 - 阴极铜表面。

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