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    • 2. 发明申请
    • Correction of Delay-Based Metric Measurements Using Delay Circuits Having Differing Metric Sensitivities
    • 使用具有不同公制灵敏度的延迟电路校正基于延迟的公制测量
    • US20080288196A1
    • 2008-11-20
    • US11750385
    • 2007-05-18
    • Harmander SinghAlan J. DrakeFadi H. GebaraJohn P. KeaneJeremy D. SchaubRobert M. Senger
    • Harmander SinghAlan J. DrakeFadi H. GebaraJohn P. KeaneJeremy D. SchaubRobert M. Senger
    • G01R29/00G01R29/02
    • G01R31/3016
    • Correction of delay-based metric measurements using delay circuits having differing metric sensitivities provides improved accuracy for environmental and other circuit metric measurements that used delay lines. A delay line measurement, which may be a one-shot measurement or a ring oscillator frequency measurement is performed either simultaneously or sequentially using at least two delay lines that have differing sensitivities to a particular metric under measurement. A correction circuit or algorithm uses the measured delays or ring oscillator frequencies and corrects at least one of the metric measurements determined from one of the delays or ring oscillator frequencies in conformity with the other delay or ring oscillator frequency. The delays may be inverter chains, with one chain having a higher sensitivity to supply voltage than the other delay chain, with the other delay chain having a higher sensitivity to temperature. Temperature results can then be corrected for supply voltage variation and vice-versa.
    • 使用具有不同的度量灵敏度的延迟电路对基于延迟的度量测量进行校正为使用延迟线的环境和其他电路量度测量提供了改进的精度。 可以使用对测量的特定度量具有不同灵敏度的至少两个延迟线来同时或顺序地执行可以是单次测量或环形振荡器频率测量的延迟线测量。 校正电路或算法使用测量的延迟或环形振荡器频率,并根据其他延迟或环形振荡器频率来校正从延迟或环形振荡器频率之一确定的度量测量中的至少一个。 延迟可以是逆变器链,一个链对电源电压的敏感性高于另一个延迟链,另一个延迟链对温度具有较高的灵敏度。 然后可以对电源电压变化校正温度结果,反之亦然。
    • 4. 发明授权
    • Correction of delay-based metric measurements using delay circuits having differing metric sensitivities
    • 使用具有不同度量灵敏度的延迟电路校正基于延迟的度量测量
    • US07548823B2
    • 2009-06-16
    • US11750385
    • 2007-05-18
    • Harmander SinghAlan J. DrakeFadi H. GebaraJohn P. KeaneJeremy D. SchaubRobert M. Senger
    • Harmander SinghAlan J. DrakeFadi H. GebaraJohn P. KeaneJeremy D. SchaubRobert M. Senger
    • G01R29/00
    • G01R31/3016
    • Correction of delay-based metric measurements using delay circuits having differing metric sensitivities provides improved accuracy for environmental and other circuit metric measurements that used delay lines. A delay line measurement, which may be a one-shot measurement or a ring oscillator frequency measurement is performed either simultaneously or sequentially using at least two delay lines that have differing sensitivities to a particular metric under measurement. A correction circuit or algorithm uses the measured delays or ring oscillator frequencies and corrects at least one of the metric measurements determined from one of the delays or ring oscillator frequencies in conformity with the other delay or ring oscillator frequency. The delays may be inverter chains, with one chain having a higher sensitivity to supply voltage than the other delay chain, with the other delay chain having a higher sensitivity to temperature. Temperature results can then be corrected for supply voltage variation and vice-versa.
    • 使用具有不同的度量灵敏度的延迟电路对基于延迟的度量测量进行校正为使用延迟线的环境和其他电路量度测量提供了改进的精度。 可以使用对测量的特定度量具有不同灵敏度的至少两个延迟线来同时或顺序地执行可以是单次测量或环形振荡器频率测量的延迟线测量。 校正电路或算法使用测量的延迟或环形振荡器频率,并根据其他延迟或环形振荡器频率来校正从延迟或环形振荡器频率之一确定的度量测量中的至少一个。 延迟可以是逆变器链,一个链对电源电压的敏感性高于另一个延迟链,另一个延迟链对温度具有较高的灵敏度。 然后可以对电源电压变化校正温度结果,反之亦然。
    • 6. 发明授权
    • Delay-based bias temperature instability recovery measurements for characterizing stress degradation and recovery
    • 基于延迟的偏置温度不稳定性恢复测量,用于表征应力退化和恢复
    • US07949482B2
    • 2011-05-24
    • US12142294
    • 2008-06-19
    • Fadi H. GebaraJerry D. HayesJohn P. KeaneSani R. NassifJeremy D. Schaub
    • Fadi H. GebaraJerry D. HayesJohn P. KeaneSani R. NassifJeremy D. Schaub
    • G01L1/00
    • G01R31/31725G01R31/2856
    • A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
    • 一种方法,测试电路和测试系统提供测量以精确表征由于负偏压温度不稳定性(NBTI)和正偏压温度不稳定性(PBTI)引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量,当应力以几十纳秒的间隔施加,同时避免不必要的恢复时,和/或实现纳秒范围内的恢复曲线采样分辨率,使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力,然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。
    • 7. 发明授权
    • Test circuit for bias temperature instability recovery measurements
    • 用于偏置温度不稳定性恢复测量的测试电路
    • US08676516B2
    • 2014-03-18
    • US13524208
    • 2012-06-15
    • Fadi H. GebaraJerry D. HayesJohn P. KeaneSani R. NassifJeremy D. Schaub
    • Fadi H. GebaraJerry D. HayesJohn P. KeaneSani R. NassifJeremy D. Schaub
    • G01L3/00
    • G01R31/31725G01R31/2856
    • A method and test circuit provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
    • 一种方法和测试电路提供测量,以准确表征由于负偏压温度不稳定性(NBTI)和正偏压温度不稳定性(PBTI)引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量,当应力以几十纳秒的间隔施加,同时避免不必要的恢复时,和/或实现纳秒范围内的恢复曲线采样分辨率,使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力,然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。
    • 8. 发明申请
    • Delay-Based Bias Temperature Instability Recovery Measurements for Characterizing Stress Degradation and Recovery
    • 基于延迟的偏压温度不稳定性恢复测量,用于表征应力退化和恢复
    • US20090319202A1
    • 2009-12-24
    • US12142294
    • 2008-06-19
    • Fadi H. GebaraJerry D. HayesJohn P. KeaneSani R. NassifJeremy D. Schaub
    • Fadi H. GebaraJerry D. HayesJohn P. KeaneSani R. NassifJeremy D. Schaub
    • G01L1/00
    • G01R31/31725G01R31/2856
    • A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
    • 一种方法,测试电路和测试系统提供测量以精确表征由于负偏压温度不稳定性(NBTI)和正偏压温度不稳定性(PBTI)引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量,当应力以几十纳秒的间隔施加,同时避免不必要的恢复时,和/或实现纳秒范围内的恢复曲线采样分辨率,使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力,然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。
    • 9. 发明申请
    • TEST CIRCUIT FOR BIAS TEMPERATURE INSTABILITY RECOVERY MEASUREMENTS
    • 用于偏温不稳定性恢复测量的测试电路
    • US20120262187A1
    • 2012-10-18
    • US13524208
    • 2012-06-15
    • Fadi H. GebaraJerry D. HayesJohn P. KeaneSani R. NassifJeremy D. Schaub
    • Fadi H. GebaraJerry D. HayesJohn P. KeaneSani R. NassifJeremy D. Schaub
    • G01R27/28
    • G01R31/31725G01R31/2856
    • A method and test circuit provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
    • 一种方法和测试电路提供测量,以准确表征由于负偏压温度不稳定性(NBTI)和正偏压温度不稳定性(PBTI)引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量,当应力以几十纳秒的间隔施加,同时避免不必要的恢复时,和/或实现纳秒范围内的恢复曲线采样分辨率,使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力,然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。
    • 10. 发明授权
    • Test circuit for bias temperature instability recovery measurements
    • 用于偏置温度不稳定性恢复测量的测试电路
    • US08229683B2
    • 2012-07-24
    • US12962726
    • 2010-12-08
    • Fadi H. GebaraJerry D. HayesJohn P. KeaneSani R. NassifJeremy D. Schaub
    • Fadi H. GebaraJerry D. HayesJohn P. KeaneSani R. NassifJeremy D. Schaub
    • G01L1/00
    • G01R31/31725G01R31/2856
    • A method, test circuit and test system provide measurements to accurately characterize threshold voltage changes due to negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI). Both the bias temperature instability recovery profile and/or the bias temperature shifts due to rapid repetitions of stress application can be studied. In order to provide accurate measurements when stresses are applied at intervals on the order of tens of nanoseconds while avoiding unwanted recovery, and/or to achieve recovery profile sampling resolutions in the nanosecond range, multiple delay or ring oscillator frequency measurements are made using a delay line that is formed from delay elements that have delay variation substantially caused only by NBTI or PBTI effects. Devices in the delay elements are stressed, and then the delay line/ring oscillator is operated to measure a threshold voltage change for one or more measurement periods on the order of nanoseconds.
    • 一种方法,测试电路和测试系统提供测量以精确表征由于负偏压温度不稳定性(NBTI)和正偏压温度不稳定性(PBTI)引起的阈值电压变化。 可以研究由于应力应用的快速重复引起的偏置温度不稳定性恢复曲线和/或偏置温度偏移。 为了提供精确的测量,当应力以几十纳秒的间隔施加,同时避免不必要的恢复时,和/或实现纳秒范围内的恢复曲线采样分辨率,使用延迟进行多个延迟或环形振荡器频率测量 由具有实质上仅由NBTI或PBTI效应引起的延迟变化的延迟元件形成的线。 延迟元件中的器件受到应力,然后延迟线/环形振荡器被操作以测量一个或多个量级的纳秒的一个或多个测量周期的阈值电压变化。