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    • 1. 发明申请
    • Nanotube schottky diodes for high-frequency applications
    • 纳米管肖特基二极管用于高频应用
    • US20080315181A1
    • 2008-12-25
    • US12072320
    • 2008-02-25
    • Harish ManoharaBrian HuntErich SchlechtPeter SiegelEric Wong
    • Harish ManoharaBrian HuntErich SchlechtPeter SiegelEric Wong
    • H01L29/12H01L21/205
    • H01L29/872B82Y10/00H01L29/0665H01L29/0673H01L29/66143
    • Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.
    • 描述了使用具有钛肖特基和铂欧姆接触的半导体单壁纳米管(s-SWNT)的肖特基二极管,用于高频应用。 二极管是通过s-SWNT上的异种金属触点的成角度蒸发来制造的。 这些器件表现出具有大于-15V的大反向偏压击穿电压的整流特性。为了降低串联电阻,在单个器件中并行生长多个SWNT,并且金属管被选择性地烧毁。 在低偏差下,这些二极管的理想因素在1.5至1.9的范围内。 在2.5THz(THz)频率下,这些二极管作为室温下的直接检测器的建模,表明与现有技术的砷化镓销售状态肖特基二极管相当的噪声等效功率(NEP)在10- 13 W /平方根(√)Hz。
    • 2. 发明申请
    • Nanotube Schottky diodes for high-frequency applications
    • 纳米管肖特基二极管用于高频应用
    • US20060261433A1
    • 2006-11-23
    • US11439625
    • 2006-05-23
    • Harish ManoharaBrian HuntErich SchlechtPeter SiegelEric Wong
    • Harish ManoharaBrian HuntErich SchlechtPeter SiegelEric Wong
    • H01L21/00
    • H01L29/872B82Y10/00H01L29/0665H01L29/0673H01L29/66143
    • Described is a Schottky diode using semi-conducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse-bias breakdown voltages of greater than −15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases, these diodes showed ideality factors in the range of 1.5 to 1.9. Modeling of these diodes as direct detectors at room temperature at 2.5 terahertz (THz) frequency indicates noise equivalent powers (NEP) comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10-13 W/square-root (√) Hz.
    • 描述了使用具有钛肖特基和铂欧姆接触的半导体单壁纳米管(s-SWNT)的肖特基二极管,用于高频应用。 二极管是通过s-SWNT上的异种金属触点的成角度蒸发来制造的。 这些器件表现出具有大于-15V的大反向偏压击穿电压的整流特性。为了降低串联电阻,在单个器件中并行生长多个SWNT,并且金属管被选择性地烧毁。 在低偏差下,这些二极管的理想因素在1.5至1.9的范围内。 在2.5THz(THz)频率下,这些二极管作为室温下的直接检测器的建模,表明与现有技术的砷化镓销售状态肖特基二极管相当的噪声等效功率(NEP)在10- 13 W /平方根(√)Hz。
    • 4. 发明授权
    • Sulfonic acid-N'-methylamido-N'-sulfenyl-N-methyl-carbamic acid esters
    • 磺酸-N'-甲基酰氨基-N'-磺酰基-N-甲基 - 氨基甲酸酯
    • US4212883A
    • 1980-07-15
    • US900386
    • 1978-04-24
    • Peter SiegelEngelbert KuhleIngeborg HammannBernhard HomeyerWolfgang Behrenz
    • Peter SiegelEngelbert KuhleIngeborg HammannBernhard HomeyerWolfgang Behrenz
    • A01N47/24C07D317/24C07D317/46A01N9/16C07D339/02
    • C07D317/24A01N47/24C07D317/46
    • Sulfonic acid-N'-methylamide-N'-sulfenyl-N-methyl-carbamic acid esters of the formula ##STR1## in which R.sup.1 is dialkylamino with 1-4 carbon atoms in each alkyl group, phenyl substituted in the o- or m-position by halogen or by alkyl with 1-4 carbon atoms, or phenyl substituted in the o-, m- or p-position by NO.sub.2, CF.sub.3 or CN, andR.sup.2 is phenyl, naphthyl, benzodioxolanyl or indanyl; phenyl, naphthyl, benzodioxolanyl or indanyl substituted by trihalogenomethyl, halogen, nitro, cyano, formamidino, dioxanyl or dioxolanyl, or by alkyl, alkenyl, alkynyl, alkoxy, alkenoxy, alkynoxy, alkylmercapto, alkenylmercapto or dialkylamino wherein each hydrocarbon portion has 1-4 carbon atoms; cycloalkyl of 5-7 carbon atoms, or ##STR2## in which R .sup.3 and R.sup.4 each independently is cyano or alkyl, alkoxy, alkylthio or alkoxycarbonyl with 1-4 carbon atoms in each alkyl group, or R.sup.3 and R.sup.4 together form a ring, or, provided that R.sup.1 is a NO.sub.2 -substituted phenyl, R.sup.3 and R.sup.4 may be dihydrobenzofuranyl or dihydrobenzofuranyl substituted by alkyl of 1-4 carbon atoms,which possess insecticidal, acaricidal, nematicidal, fungicidal and herbicidal properties.
    • 其中R 1是每个烷基中具有1-4个碳原子的二烷基氨基,在o取代的苯基的磺酸-N'-甲酰胺-N'-磺酰基-N-甲基 - 氨基甲酸酯 - 或 - 位置被卤素或具有1-4个碳原子的烷基取代,或在由O-,m-或p-位置被NO 2,CF 3或CN取代的苯基,R 2是苯基,萘基,苯并二恶烷基或茚满基; 苯基,萘基,苯并二氧杂环戊烷基或被三卤甲基,卤素,硝基,氰基,甲酰氨基,二烷基或二氧戊环基取代的茚满基,或被烷基,烯基,炔基,烷氧基,链烯氧基,炔氧基,烷基巯基,烯基巯基或二烷基氨基取代, 碳原子 或者其中R 3和R 4各自独立地为氰基或烷基,烷氧基,烷硫基或烷基中具有1-4个碳原子的烷氧基羰基,或者R 3和R 4一起形成环, 或者如果R 1是NO 2取代的苯基,则R 3和R 4可以是被1-4个碳原子的烷基取代的二氢苯并呋喃基或二氢苯并呋喃基,其具有杀虫,杀螨,杀线虫,杀真菌和除草性质。