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1. 发明授权

US5312717A Residue free vertical pattern transfer with top surface imaging resists 失效
标题翻译：残留自由垂直图案转印与顶部表面成像抗蚀剂
公开(公告)号：US5312717A
公开(公告)日：1994-05-17
申请号：US949963
申请日：1992-09-24
申请人： Harbans S. Sachdev , John C. Forster , Leo L. Linehan , Scott A. MacDonald , K. Paul L. Muller , Walter E. Mlynko , Linda K. Somerville
发明人： Harbans S. Sachdev , John C. Forster , Leo L. Linehan , Scott A. MacDonald , K. Paul L. Muller , Walter E. Mlynko , Linda K. Somerville
IPC分类号： G03F7/26 , G03F7/36 , G03C5/00
CPC分类号： G03F7/36 , G03F7/265
摘要： A method for transferring a pattern through a photoresist layer in the fabrication of submicron semiconductor devices structures is disclosed. A photoresist is provided on a substrate and the same is imagewise exposed with a desired pattern to form exposed and unexposed patterned areas in the top surface of the photoresist. The photoresist is then baked to form cross-linked regions in the exposed pattern areas of the photoresist. Silylation is then performed to incorporate silicon into the unexposed patterned areas of the photoresist, wherein some incorporation of silicon occurs in the exposed patterned crosslinked areas of the photoresist. The patterned photoresist is subsequently etched using a high density, low pressure, anisotropic O.sub.2 plasma alone to produce residue-free images with vertical wall profiles in the photoresist. This method is particularly advantageous with RFI reactive ion etch systems.
摘要翻译：公开了在制造亚微米半导体器件结构中通过光致抗蚀剂层转印图案的方法。在基板上提供光致抗蚀剂，并将其以所需图案成像曝光，以在光致抗蚀剂的顶表面中形成曝光和未曝光的图案区域。然后将光致抗蚀剂烘烤以在光致抗蚀剂的暴露图案区域中形成交联区域。然后进行硅烷化以将硅结合到光致抗蚀剂的未曝光图案区域中，其中硅的一些掺入发生在光致抗蚀剂的暴露的图案化交联区域中。随后使用高密度，低压，各向异性O 2等离子体蚀刻图案化的光致抗蚀剂，以在光致抗蚀剂中产生具有垂直壁分布的无残留图像。该方法对于RFI反应离子蚀刻系统是特别有利的。

2. 发明授权

US5322765A Dry developable photoresist compositions and method for use thereof 失效
标题翻译：干可显影光致抗蚀剂组合物及其使用方法
公开(公告)号：US5322765A
公开(公告)日：1994-06-21
申请号：US796527
申请日：1991-11-22
申请人： Nicholas J. Clecak , Willard E. Conley , Ranee W.-L. Kwong , Leo L. Linehan , Scott A. MacDonald , Harbans S. Sachdev , Hubert Schlosser , Carlton G. Willson
发明人： Nicholas J. Clecak , Willard E. Conley , Ranee W.-L. Kwong , Leo L. Linehan , Scott A. MacDonald , Harbans S. Sachdev , Hubert Schlosser , Carlton G. Willson
IPC分类号： G03F7/004 , G03F7/029 , G03F7/038 , G03F7/039 , G03F7/26 , G03F7/36 , G03F7/38 , H01L21/027 , H01L21/30 , G03C1/72 , G03F7/00
CPC分类号： G03F7/038 , G03F7/039 , G03F7/265
摘要： Dry developable top surface imageable photoresist compositions which comprise, in admixture, a film-forming aromatic polymer resin activated to electrophilic substitution, an acid catalyzable agent capable of being inserted into the aromatic polymer resin, and a radiation degradable acid generating compound and processes for generating positive tone resist images on substrates therewith.
摘要翻译：干可显影的顶表面可成像光致抗蚀剂组合物，其包含活化成亲电取代的成膜芳族聚合物树脂，能够插入到芳族聚合物树脂中的酸催化剂，以及可辐射降解酸生成化合物和产生正色调抵消了基板上的图像。

3. 发明授权

US5115090A Viscosity stable, essentially gel-free polyamic acid compositions 失效
标题翻译：粘度稳定，基本无凝胶聚氨酯组合物
公开(公告)号：US5115090A
公开(公告)日：1992-05-19
申请号：US503401
申请日：1990-03-30
申请人： Krishna G. Sachdev , John P. Hummel , Ranee W. Kwong , Robert N. Lang , Leo L. Linehan , Harbans S. Sachdev
发明人： Krishna G. Sachdev , John P. Hummel , Ranee W. Kwong , Robert N. Lang , Leo L. Linehan , Harbans S. Sachdev
IPC分类号： C08G73/10 , C08L79/08 , H01L21/312 , H01L23/29 , H01L23/498 , H01L23/532 , H05K1/00
CPC分类号： H01L23/5329 , C08G73/1014 , H01L23/293 , H01L23/49894 , H01L2924/0002 , H05K3/4676
摘要： Viscosity stable, essentially gel-free linear polyamic acids are provided by a process utilizing offset stoichiometry. Polyimides formed from such polyamic acids have low TCE and low dielectric constants.Methods for improved adhesion of polyimides are also disclosed.

4. 发明授权

US5296332A Crosslinkable aqueous developable photoresist compositions and method for use thereof 失效
标题翻译：可交联水性可显影光致抗蚀剂组合物及其使用方法
公开(公告)号：US5296332A
公开(公告)日：1994-03-22
申请号：US796155
申请日：1991-11-22
申请人： Harbans S. Sachdev , Willard E. Conley , Premlatha Jagannathan , Ahmad D. Katnani , Ranee W. Kwong , Leo L. Linehan , Steve S. Muira , Randolph J. Smith
发明人： Harbans S. Sachdev , Willard E. Conley , Premlatha Jagannathan , Ahmad D. Katnani , Ranee W. Kwong , Leo L. Linehan , Steve S. Muira , Randolph J. Smith
IPC分类号： G03F7/004 , G03F7/038 , G03F7/075 , H01L21/027 , H01L21/30 , G03C5/56 , G03C1/73 , G03C1/76
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/038
摘要： High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.
摘要翻译：用于深UV，i线电子束和x射线光刻的高灵敏度，高对比度，热稳定抗蚀剂组合物。这些组合物包括具有用于亲电取代活化的芳环的成膜聚合物，形成羟基稳定的碳鎓离子的酸催化交联剂和光酸产生剂。组合物是可显影的水性基质。

5. 发明授权

US4599243A Use of plasma polymerized organosilicon films in fabrication of lift-off masks 失效
标题翻译：使用等离子体聚合的有机硅膜制造剥离掩模
公开(公告)号：US4599243A
公开(公告)日：1986-07-08
申请号：US668361
申请日：1984-11-05
申请人： Harbans S. Sachdev , Krishna G. Sachdev
发明人： Harbans S. Sachdev , Krishna G. Sachdev
IPC分类号： G03F7/09 , B05D3/06
CPC分类号： G03F7/094 , Y10S438/951
摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.
摘要翻译：通过辉光放电或有机硅烷，有机硅氧烷和有机硅氧烷的等离子体聚合沉积的无针孔薄膜，用作多层抗蚀剂结构中的反应离子蚀刻氧阻挡层，用于制造半导体器件（例如集成电路）的剥离掩模。该方法包括将薄的等离子体聚合的有机硅阻挡膜沉积在预先涂覆在基底上的辐射不敏感的聚合物基底层上，随后对等离子体聚合的阻挡层进行热退火，然后在其上涂覆辐射敏感的抗蚀剂层。在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的反应性溅射蚀刻将图像蚀刻转移到阻挡层中，并随后在氧等离子体中转移到基底层中，到底层，在此期间，等离子体沉积膜用作氧气屏障。最终金属图案通过金属化和剥离步骤形成。

6. 发明授权

US4562091A Use of plasma polymerized orgaosilicon films in fabrication of lift-off masks 失效
标题翻译：使用等离子体聚合硅胶膜制造剥离掩模
公开(公告)号：US4562091A
公开(公告)日：1985-12-31
申请号：US668360
申请日：1984-12-18
申请人： Harbans S. Sachdev , Krishna G. Sachdev
发明人： Harbans S. Sachdev , Krishna G. Sachdev
IPC分类号： G03F7/09 , B05D3/06
CPC分类号： G03F7/094
摘要： Pinhole-free thin films deposited by glow discharge or plasma polymerization of organosilanes, organosilazones and organosiloxanes for use as reactive ion etch oxygen barriers in multilayer resist structures, of lift-off masks, for fabrication of semiconductor devices, such as integrated circuits. The process includes deposition of thin plasma polymerized organosilicon barrier film over a radiation insensitive polymeric base layer previously coated on a substrate, followed by thermal annealing of the plasma polymerized barrier layer, over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is etch transferred into the barrier layer by reactive sputter etching in a fluorine containing ambient, and subsequently transferred into the base layer, down to the substrate, in an oxygen plasma, during which time the plasma deposited film functions as an oxygen barrier. Final metal patterns are formed by metallization and lift-off steps.
摘要翻译：通过辉光放电或有机硅烷，有机硅氧烷和有机硅氧烷的等离子体聚合沉积的无针孔薄膜，用作多层抗蚀剂结构中的反应离子蚀刻氧阻挡层，用于制造半导体器件（例如集成电路）的剥离掩模。该方法包括将薄的等离子体聚合的有机硅阻挡膜沉积在预先涂覆在基底上的辐射不敏感的聚合物基底层上，随后对等离子体聚合的阻挡层进行热退火，然后在其上涂覆辐射敏感的抗蚀剂层。在通过图像曝光和显影定义所需的抗蚀剂图案之后，通过在含氟环境中的反应性溅射蚀刻将图像蚀刻转移到阻挡层中，并随后在氧等离子体中转移到基底层中，到底层，在此期间，等离子体沉积膜用作氧气屏障。最终金属图案通过金属化和剥离步骤形成。

7. 发明授权

US5114826A Photosensitive polyimide compositions 失效
标题翻译：感光性聚酰亚胺组合物
公开(公告)号：US5114826A
公开(公告)日：1992-05-19
申请号：US458130
申请日：1989-12-28
申请人： Ranee W. Kwong , Harbans S. Sachdev , Krishna G. Sachdev
发明人： Ranee W. Kwong , Harbans S. Sachdev , Krishna G. Sachdev
IPC分类号： C08F2/46 , C08G73/10 , C08K5/23 , C08K5/28 , C08L79/08 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/26 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0758 , G03F7/0387 , G03F7/039 , H01L2224/11334
摘要： New photosensitive polyimide compositions and processes of using the same in the fabrication of electronic components are provided. These compositions are comprised of ##STR1## containing polyamic acids and/or the corresponding hydroxy-polyamic esters, or hydroxypolyimides and a photoactive component as an additive or as covalently bonded functionality on the polymer chain. These compositions provide positive or negative patterning options and may be used as conventional resist materials, as imageable dielectric or passivating layers, as high Tg ion implant masks or as imageable lift-off layers in the fabrication of multilevel metal structures.

8. 发明授权

US5094769A Compliant thermally conductive compound 失效
标题翻译：合格的导电化合物
公开(公告)号：US5094769A
公开(公告)日：1992-03-10
申请号：US193475
申请日：1988-05-13
申请人： Herbert R. Anderson, Jr. , Richard B. Booth , Lawrence D. David , Mark O. Neisser , Harbans S. Sachdev , Mark A. Takacs
发明人： Herbert R. Anderson, Jr. , Richard B. Booth , Lawrence D. David , Mark O. Neisser , Harbans S. Sachdev , Mark A. Takacs
IPC分类号： H01L23/373 , C09K5/08 , F28F13/00
CPC分类号： C09K5/08 , F28F13/00 , F28F2013/006 , H01L2224/16225 , H01L2224/73253
摘要： A compliant thermally conductive, preferably dielectric, compound that enhances the power dissipation capability of high-powered electrical components such as bipolar VLSI semiconductor chips. The compound has chemically stable thermal conduction and viscosity properties; is not subject to phase separation during use and may be applied in small gaps to maximize thermal conduction. The compound preferably comprises a liquid carrier having thermal filler particles dispersed therein and a coupling agent having a functionality which is reactive with the calcined surface of the thermal filler particles, and a functionality having preferential wetting of the thermal filler particles over self-condensation. Additional additives such as fumed silica and polyisobutylene enhance the phase stability and resistance to thermo-mechanical shear force degradation of the thermally conductive compound encountered during functional usage, e.g., fluctuating power cycles.

9. 发明授权

US4665006A Positive resist system having high resistance to oxygen reactive ion etching 失效
标题翻译：具有高耐氧反应离子蚀刻性的正抗蚀剂体系
公开(公告)号：US4665006A
公开(公告)日：1987-05-12
申请号：US806597
申请日：1985-12-09
申请人： Krishna G. Sachdev , Ranee W. Kwong , Mahmoud M. Khojasteh , Harbans S. Sachdev
发明人： Krishna G. Sachdev , Ranee W. Kwong , Mahmoud M. Khojasteh , Harbans S. Sachdev
IPC分类号： G03F7/20 , G03F7/039 , G03F7/075 , H01L21/027 , G03C5/16 , G03C1/495 , G03F7/26
CPC分类号： G03F7/0757 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/123 , Y10S430/126
摘要： A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.
摘要翻译：公开了一种光致抗蚀剂组合物，其包含具有由鎓盐敏化的有机聚硅氧烷部分的可辐射可分裂聚合物体系。有用的含有机聚硅氧烷的聚合物包括聚硅氧烷 - 聚碳酸酯嵌段共聚物和聚有机硅氧烷聚芳酯。由光致抗蚀剂组合物制成的抗蚀剂膜显示出高灵敏度，高热稳定性和耐氧反应离子蚀刻性能，这使得它们对于干蚀刻工艺是可取的，以实现亚微米分辨率。

10. 发明授权

US5422223A Silicon-containing positive resist and use in multilayer metal structures 失效
标题翻译：含硅阳性抗蚀剂，用于多层金属结构
公开(公告)号：US5422223A
公开(公告)日：1995-06-06
申请号：US274572
申请日：1994-07-13
申请人： Krishna G. Sachdev , Harbans S. Sachdev , Joel R. Whitaker
发明人： Krishna G. Sachdev , Harbans S. Sachdev , Joel R. Whitaker
IPC分类号： G03F7/023 , C08G77/388 , C08G77/392 , G03F7/075 , H01L21/027 , H01L21/30 , G03F7/021 , G03F7/36
CPC分类号： C08G77/392 , C08G77/388 , G03F7/075 , G03F7/0757
摘要： Photosensitive silicon-containing resist compositions comprising hydroxyphenylsilsesquioxanes and siloxanes partially estersified with diazonaphthoquinone sulfonyloxy groups for imageable O.sub.2 RIE barrier films. Methods for forming image patterns on substrates using these photosensitive silicon-containing resist compositions are also provided.
摘要翻译：包含羟基苯基倍半硅氧烷和与用于可成像的O 2 RIE阻挡膜的重氮萘醌磺酰氧基部分酯化的硅氧烷的光敏含硅抗蚀剂组合物。还提供了使用这些感光性含硅抗蚀剂组合物在基板上形成图案的方法。

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