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    • 1. 发明申请
    • SEMICONDUCTOR DEVICES
    • 半导体器件
    • US20100200916A1
    • 2010-08-12
    • US12369821
    • 2009-02-12
    • Harald GossnerRamgopal RaoAngada SachidAshish PalRam Asra
    • Harald GossnerRamgopal RaoAngada SachidAshish PalRam Asra
    • H01L29/78
    • H01L29/165H01L21/26586H01L29/0657H01L29/083H01L29/0834H01L29/66356H01L29/7391
    • In an embodiment, a semiconductor device is provided. The semiconductor device may include a substrate having a main processing surface, a first source/drain region comprising a first material of a first conductivity type, a second source/drain region comprising a second material of a second conductivity type, wherein the second conductivity type is different from the first conductivity type, a body region electrically coupled between the first source/drain region and the second source/drain region, wherein the body region extends deeper into the substrate than the first source/drain region in a first direction that is perpendicular to the main processing surface of the substrate, a gate dielectric disposed over the body region, and a gate region disposed over the gate dielectric, wherein the gate region overlaps with at least a part of the first source/drain region and with a part of the body region in the first direction.
    • 在一个实施例中,提供了半导体器件。 半导体器件可以包括具有主处理表面的衬底,包括第一导电类型的第一材料的第一源极/漏极区域,包括第二导电类型的第二材料的第二源极/漏极区域,其中第二导电类型 不同于第一导电类型,电耦合在第一源极/漏极区域和第二源极/漏极区域之间的主体区域,其中主体区域在第一方向上比第一源极/漏极区域在第一方向 垂直于基板的主处理表面,设置在主体区域上的栅极电介质和设置在栅极电介质上的栅极区域,其中栅极区域与第一源极/漏极区域的至少一部分重叠, 的身体区域在第一个方向。
    • 2. 发明授权
    • Semiconductor devices
    • 半导体器件
    • US08405121B2
    • 2013-03-26
    • US12369821
    • 2009-02-12
    • Harald GossnerRamgopal RaoAngada SachidAshish PalRam Asra
    • Harald GossnerRamgopal RaoAngada SachidAshish PalRam Asra
    • H01L29/66
    • H01L29/165H01L21/26586H01L29/0657H01L29/083H01L29/0834H01L29/66356H01L29/7391
    • In an embodiment, a semiconductor device is provided. The semiconductor device may include a substrate having a main processing surface, a first source/drain region comprising a first material of a first conductivity type, a second source/drain region comprising a second material of a second conductivity type, wherein the second conductivity type is different from the first conductivity type, a body region electrically coupled between the first source/drain region and the second source/drain region, wherein the body region extends deeper into the substrate than the first source/drain region in a first direction that is perpendicular to the main processing surface of the substrate, a gate dielectric disposed over the body region, and a gate region disposed over the gate dielectric, wherein the gate region overlaps with at least a part of the first source/drain region and with a part of the body region in the first direction.
    • 在一个实施例中,提供了半导体器件。 半导体器件可以包括具有主处理表面的衬底,包括第一导电类型的第一材料的第一源极/漏极区域,包括第二导电类型的第二材料的第二源极/漏极区域,其中第二导电类型 不同于第一导电类型,电耦合在第一源极/漏极区域和第二源极/漏极区域之间的主体区域,其中主体区域在第一方向上比第一源极/漏极区域在第一方向 垂直于基板的主处理表面,设置在主体区域上的栅极电介质和设置在栅极电介质上的栅极区域,其中栅极区域与第一源极/漏极区域的至少一部分重叠, 的身体区域在第一个方向。