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1. 发明申请

US20130119371A1 ACTIVE DEVICE 有权
标题翻译：活动设备
公开(公告)号：US20130119371A1
公开(公告)日：2013-05-16
申请号：US13444860
申请日：2012-04-12
申请人： Hao-Lin Chiu , Chi-Jui Lin , Shu-Wei Tsao , Chun-Nan Lin , Po-Liang Yeh , Shine-Kai Tseng
发明人： Hao-Lin Chiu , Chi-Jui Lin , Shu-Wei Tsao , Chun-Nan Lin , Po-Liang Yeh , Shine-Kai Tseng
IPC分类号： H01L29/786
CPC分类号： H01L29/41733 , H01L29/42384 , H01L29/7869
摘要： An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.
摘要翻译：提供了包括源极，漏极，氧化物半导体层，栅极和栅极绝缘体层的有源器件。源极包括彼此平行的第一条纹电极和与其连接的第一连接电极。漏极包括彼此平行的第二条状电极和与其连接的第二连接电极，其中第一条形电极和第二条状电极彼此平行，电隔离并交替布置，并且之间形成之字形沟槽。门沿着之字形沟槽延伸。氧化物半导体层与源极和漏极接触，其中氧化物半导体层和每个第一条带电极之间的接触面积基本上等于每个第一条带电极的布局面积，并且每个第二条带电极之间的接触面积基本上等于每个第二条纹电极的布局区域。

2. 发明授权

US08704220B2 Active device 有权
标题翻译：主动装置
公开(公告)号：US08704220B2
公开(公告)日：2014-04-22
申请号：US13444860
申请日：2012-04-12
申请人： Hao-Lin Chiu , Chi-Jui Lin , Shu-Wei Tsao , Chun-Nan Lin , Po-Liang Yeh , Shine-Kai Tseng
发明人： Hao-Lin Chiu , Chi-Jui Lin , Shu-Wei Tsao , Chun-Nan Lin , Po-Liang Yeh , Shine-Kai Tseng
IPC分类号： H01L29/12
CPC分类号： H01L29/41733 , H01L29/42384 , H01L29/7869
摘要： An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.
摘要翻译：提供了包括源极，漏极，氧化物半导体层，栅极和栅极绝缘体层的有源器件。源极包括彼此平行的第一条纹电极和与其连接的第一连接电极。漏极包括彼此平行的第二条状电极和与其连接的第二连接电极，其中第一条形电极和第二条状电极彼此平行，电隔离并交替布置，并且之间形成之字形沟槽。门沿着之字形沟槽延伸。氧化物半导体层与源极和漏极接触，其中氧化物半导体层和每个第一条带电极之间的接触面积基本上等于每个第一条带电极的布局面积，并且每个第二条带电极之间的接触面积基本上等于每个第二条纹电极的布局区域。

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