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1. 发明授权

US06764864B1 BST on low-loss substrates for frequency agile applications 失效
标题翻译： BST用于频率敏捷应用的低损耗衬底
公开(公告)号：US06764864B1
公开(公告)日：2004-07-20
申请号：US10418372
申请日：2003-04-17
申请人： Hao Li , Jeffrey M. Finder , Yong Liang , Corey Overgaard
发明人： Hao Li , Jeffrey M. Finder , Yong Liang , Corey Overgaard
IPC分类号： H01L2100
CPC分类号： H01L21/32105 , C30B25/18 , C30B29/32 , H01L21/31691 , H01L21/7624
摘要： An exemplary system and method for providing a microwave regime, frequency-agile device is disclosed as comprising inter alia: a low-loss, insulating substrate (200); a layer of SiO2 (210) over the surface of said substrate; and a layer of BST (220) deposited over the SiO2 layer (210). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize frequency response or other material characteristics. Exemplary embodiments of the present invention representatively provide for integrated high-efficiency, low-loss microwave components that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.
摘要翻译：公开了一种用于提供微波状态的频率敏捷装置的示例性系统和方法，其特别包括：低损耗绝缘基板（200）; 在所述衬底的表面上的SiO 2层（210）; 以及沉积在SiO 2层（210）上的BST（220）层。公开的特征和规范可以被不同地控制，配置，适配或以其他方式任意地修改，以进一步改进或以其它方式优化频率响应或其他材料特性。本发明的示例性实施例代表性地提供了集成的高效率低损耗微波部件，其可以容易地与用于改进频率响应，装置包装形状因子，重量和/或其他制造，装置或材料性能的现有技术结合指标

2. 发明授权

US06916717B2 Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate 有权
标题翻译：用于生长单晶氧化物层和用于在单晶衬底上制造半导体器件的方法
公开(公告)号：US06916717B2
公开(公告)日：2005-07-12
申请号：US10137383
申请日：2002-05-03
申请人： Hao Li , Ravindranath Droopad , Daniel S. Marshall , Yi Wei , Xiao M. Hu , Yong Liang
发明人： Hao Li , Ravindranath Droopad , Daniel S. Marshall , Yi Wei , Xiao M. Hu , Yong Liang
IPC分类号： H01L33/00 , C30B25/18 , H01L21/20 , H01L21/205 , H01L21/316 , H01L31/10 , H01S5/026 , H01L21/336
CPC分类号： C30B25/18 , H01L21/02271 , H01L21/02318 , H01L21/02381 , H01L21/02488 , H01L21/02505 , H01L21/02513 , H01L21/02521 , H01L21/31604 , H01L21/31691
摘要： High quality monocrystalline metal oxide layers are grown on a monocrystalline substrate such as a silicon wafer. The monocrystalline metal oxide is grown on the silicon substrate at a temperature low enough to prevent deleterious and simultaneous oxidation of the silicon substrate. After a layer of 1-3 monolayers of the monocrystalline oxide is grown, the growth is stopped and the crystal quality of that layer is improved by a higher temperature anneal. Following the anneal, the thickness of the layer can be increased by restarting the low temperature growth. An amorphous silicon oxide layer can be grown at the interface between the monocrystalline metal oxide layer and the silicon substrate after the thickness of the monocrystalline oxide reaches a few monolayers.
摘要翻译：高品质单晶金属氧化物层生长在诸如硅晶片的单晶衬底上。在硅衬底上生长单晶金属氧化物，其温度足够低以防止硅衬底的有害和同时的氧化。在生长单层氧化物的1-3层单层之后，停止生长，并且通过较高温度退火来改善该层的晶体质量。退火后，通过重新开始低温生长可以提高层的厚度。在单晶氧化物的厚度达到几个单层之后，可以在单晶金属氧化物层和硅衬底之间的界面处生长非晶氧化硅层。

3. 发明授权

US07217643B2 Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures 有权
标题翻译：用于制造包括高介电常数堆叠结构的半导体结构的半导体结构和方法
公开(公告)号：US07217643B2
公开(公告)日：2007-05-15
申请号：US11066887
申请日：2005-02-24
申请人： Yong Liang , Hao Li
发明人： Yong Liang , Hao Li
IPC分类号： H01L21/3205
CPC分类号： H01L29/513 , H01L21/28185 , H01L21/28194 , H01L29/517 , H01L29/78
摘要： Semiconductor structures, and methods for fabricating semiconductor structures, comprising high dielectric constant stacked structures are provided. A stacked dielectric structure (16) in accordance with one exemplary embodiment of the present invention has a first amorphous dielectric layer (18) comprising HfXZr1-XO2, where 0≦X≦1. An amorphous interlayer (20) overlies the first amorphous dielectric layer. The interlayer has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO4. A second amorphous dielectric layer (22) overlies the interlayer. The second amorphous dielectric layer comprises HfYZr1-YO2, where 0≦Y≦1. The stacked dielectric structure (16) has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO4.
摘要翻译：提供了包括高介电常数堆叠结构的半导体结构和用于制造半导体结构的方法。根据本发明的一个示例性实施例的叠层电介质结构（16）具有第一非晶介质层（18），其包括Hf x N 1-X O O > 2 ，其中0 <= X <= 1。无定形中间层（20）覆盖在第一非晶介电层上。中间层的净介电常数近似不小于HfZrO 4的介电常数。第二非晶介质层（22）覆盖在中间层上。第二非晶介质层包括Hf Y 1 Y Y 2 O 2，其中0 <= Y <= 1。叠层电介质结构（16）具有大致不小于HfZrO 4介电常数的净介电常数。

4. 发明授权

US06885065B2 Ferromagnetic semiconductor structure and method for forming the same 失效
标题翻译：铁磁半导体结构及其形成方法
公开(公告)号：US06885065B2
公开(公告)日：2005-04-26
申请号：US10299801
申请日：2002-11-20
申请人： Yong Liang , Ravindranath Droopad , Hao Li , Zhiyi Yu
发明人： Yong Liang , Ravindranath Droopad , Hao Li , Zhiyi Yu
IPC分类号： H01L21/8246 , H01L27/22 , H01L29/72
CPC分类号： H01L27/22 , B82Y10/00 , H01L43/12
摘要： A ferromagnetic semiconductor structure is provided. The structure includes a monocrystalline semiconductor substrate and a doped titanium oxide anatase layer overlying the semiconductor substrate.
摘要翻译：提供了铁磁半导体结构。该结构包括单晶半导体衬底和覆盖半导体衬底的掺杂氧化钛锐钛矿层。

5. 发明申请

US20060197227A1 Semiconductor structures and methods for fabricating semiconductor structures comprising high dielectric constant stacked structures 有权
标题翻译：用于制造包括高介电常数堆叠结构的半导体结构的半导体结构和方法
公开(公告)号：US20060197227A1
公开(公告)日：2006-09-07
申请号：US11066887
申请日：2005-02-24
申请人： Yong Liang , Hao Li
发明人： Yong Liang , Hao Li
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/513 , H01L21/28185 , H01L21/28194 , H01L29/517 , H01L29/78
摘要： Semiconductor structures, and methods for fabricating semiconductor structures, comprising high dielectric constant stacked structures are provided. A stacked dielectric structure (16) in accordance with one exemplary embodiment of the present invention has a first amorphous dielectric layer (18) comprising HfXZr1-XO2, where 0≦X≦1. An amorphous interlayer (20) overlies the first amorphous dielectric layer. The interlayer has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO4. A second amorphous dielectric layer (22) overlies the interlayer. The second amorphous dielectric layer comprises HfYZr1-YO2, where 0≦Y≦1. The stacked dielectric structure (16) has a net dielectric constant that is approximately no less than the dielectric constant of HfZrO4.
摘要翻译：提供了包括高介电常数堆叠结构的半导体结构和用于制造半导体结构的方法。根据本发明的一个示例性实施例的叠层电介质结构（16）具有第一非晶介质层（18），其包括Hf x N 1-X O O > 2 ，其中0 <= X <= 1。无定形中间层（20）覆盖在第一非晶介电层上。中间层的净介电常数近似不小于HfZrO 4的介电常数。第二非晶介质层（22）覆盖在中间层上。第二非晶介质层包括Hf Y 1 Y Y 2 O 2，其中0 <= Y <= 1。叠层电介质结构（16）具有大致不小于HfZrO 4介电常数的净介电常数。

6. 外观设计

USD1000850S1 Office chair 有权
公开(公告)号：USD1000850S1
公开(公告)日：2023-10-10
申请号：US29818688
申请日：2021-12-09
申请人： Hao Li
设计人： Hao Li
摘要： FIG. 1 is a front, right, top perspective view of an office chair showing my design.
FIG. 2 is a front elevation view thereof.
FIG. 3 is a rear elevation view thereof.
FIG. 4 is a left-side elevation view thereof.
FIG. 5 is a right-side elevation view thereof.
FIG. 6 is a top plan view thereof; and,
FIG. 7 is a bottom plan view thereof.

7. 发明授权

US09917547B2 Voltage controlled oscillator 有权
公开(公告)号：US09917547B2
公开(公告)日：2018-03-13
申请号：US14651238
申请日：2013-01-09
申请人： Hao Li
发明人： Hao Li
IPC分类号： H03B5/12 , G01S7/02 , H03B5/18 , H03B5/00 , G01S13/00
CPC分类号： H03B5/1206 , G01S7/02 , H03B5/1209 , H03B5/1231 , H03B5/1243 , H03B5/18
摘要： A voltage controlled oscillator (VCO) comprising a first supply node, a second supply node, an oscillation transistor, a biasing network, an output node and a feedback network is described. The VCO is be powered by a supply voltage applied across the first and second supply nodes. The oscillation transistor and the biasing network are connected in series between the first supply node and the second supply node. The output node is connected to the oscillation transistor so as to deliver an oscillatory output signal. The feedback network provides an oscillatory feedback signal from the output node to the biasing network. The feedback network comprises a capacitive element and a transmission line connected in series for transferring the feedback signal. The VCO may be integrated in a radar device, for example.

8. 发明授权

US08988191B2 Systems and methods for pressure-based authentication of an input on a touch screen 有权
标题翻译：用于触摸屏上输入的基于压力的认证的系统和方法
公开(公告)号：US08988191B2
公开(公告)日：2015-03-24
申请号：US12548983
申请日：2009-08-27
申请人： Keshu Zhang , Ken Douros , Haifeng Li , Hao Li , Yi Wei
发明人： Keshu Zhang , Ken Douros , Haifeng Li , Hao Li , Yi Wei
IPC分类号： G05B19/00 , G06F7/04 , H04B1/00 , H04Q1/00 , G06F3/045 , G06F21/32
CPC分类号： G06F3/045 , G06F21/32
摘要： Systems and methods are provided for authenticating an input on a touch screen. A method comprises obtaining one or more pressure metrics for an input by a user on a touch screen that is being proffered as that of a known user. Each pressure metric corresponds to a pressure applied to the touch screen by the user at a respective impression location of the input. The method further comprises authenticating the user as the known user based at least in part on the one or more pressure metrics.
摘要翻译：提供了用于在触摸屏上验证输入的系统和方法。一种方法包括获得用户在被提供为已知用户的触摸屏上的输入的一个或多个压力指标。每个压力度量对应于用户在输入的相应印象位置施加到触摸屏的压力。该方法还包括至少部分地基于一个或多个压力度量来将用户认证为已知用户。

9. 发明授权

US08963874B2 Touch screen rendering system and method of operation thereof 有权
标题翻译：触屏显示系统及其操作方法
公开(公告)号：US08963874B2
公开(公告)日：2015-02-24
申请号：US12848127
申请日：2010-07-31
申请人： Hao Li , Yi Wei , Steven Young
发明人： Hao Li , Yi Wei , Steven Young
IPC分类号： G06F3/041 , G06F3/042 , G06F3/047 , G06F3/043 , G06F3/045
CPC分类号： G06F3/0414 , G06F3/045 , Y10T29/49002 , Y10T29/49004 , Y10T29/49117
摘要： A touch-screen display apparatus, the apparatus may include first and second sheets having opposed major surfaces and a size and shape defined by a periphery. The periphery may be defined by opposed ends and opposed edges. The first and second sheets may each have a conductive pattern including a pair of opposed busbars and a plurality of traces electrically coupled to, and extending between, corresponding pairs of opposed busbars. The transparent force sensing (TFS) sheet may have opposed major surfaces and a variable resistance which is related to a force exerted upon one or more of its major surfaces. The TFS sheet may be situated between the first and second sheets. The apparatus may also include one or more separation portions situated between the TFS sheet and the first or second sheet to bias the TFS sheet apart from the first or second sheet.
摘要翻译：触摸屏显示装置，该装置可以包括具有相对的主表面的第一和第二片以及由周边限定的尺寸和形状。周边可以由相对的端部和相对的边缘限定。第一和第二片可以各自具有导电图案，其包括一对相对的汇流条以及电耦合到相对的一对相对的汇流条之间并在其之间延伸的多个迹线。透明力感测（TFS）片材可以具有相对的主表面和与施加在其主表面的一个或多个上的力相关的可变电阻。 TFS片材可以位于第一和第二片材之间。该设备还可以包括位于TFS片材和第一或第二片材之间的一个或多个分离部分，以将TFS片材从第一片材或第二片材偏离。

10. 发明申请

US20140140074A1 Light-Emitting Device 有权
标题翻译：发光装置
公开(公告)号：US20140140074A1
公开(公告)日：2014-05-22
申请号：US14131624
申请日：2012-06-04
申请人： Peng Chen , Hao Li , Tingming Liu , Shengmei Zheng
发明人： Peng Chen , Hao Li , Tingming Liu , Shengmei Zheng
IPC分类号： F21V17/16 , F21V29/00
CPC分类号： F21V17/16 , F21S4/28 , F21V3/062 , F21V17/164 , F21V19/004 , F21V19/0045 , F21V29/70 , F21V29/75 , F21V29/76 , F21Y2103/10 , F21Y2115/10
摘要： A light-emitting device, comprising: a cover (1), a heat sink (2) and a light-emitting assembly (3), wherein the heat sink (2) has at least one first locking part (a), the cover (1) has at least one second locking part (b) corresponding to the first locking part (a), the second locking part (b) engages with the first locking part (a) to form an enclosed cavity (5) for the light-emitting assembly (3), and the second locking part (b) has a pressing part (b1) pressing the light-emitting assembly (3) against the heat sink (2).
摘要翻译：一种发光装置，包括：盖（1），散热器（2）和发光组件（3），其中所述散热器（2）具有至少一个第一锁定部分（a），所述盖（1）具有对应于第一锁定部分（a）的至少一个第二锁定部分（b），第二锁定部分（b）与第一锁定部分（a）接合以形成用于光的封闭空腔（5）（3），第二锁定部（b）具有将发光组件（3）压靠在散热器（2）上的按压部（b1）。

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