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    • 1. 发明授权
    • Method of structuring a semiconductor chip
    • 结晶半导体芯片的方法
    • US5242533A
    • 1993-09-07
    • US828033
    • 1992-01-30
    • Hans-Peter TrahGuenther FindlerJoerg Muchow
    • Hans-Peter TrahGuenther FindlerJoerg Muchow
    • H01L21/22H01L21/302H01L21/306H01L21/3063H01L21/3065H01L21/308H01L29/84
    • H01L21/30604H01L21/3063H01L21/3081Y10S438/924
    • Processes are proposed for structuring monocrystalline semiconductor substrates provided with a basic doping, in particular silicon substrates with a (100) or (110) crystal orientation. In this process, at least one main surface of the semiconductor substrate is passivated by means of a structured masking layer, and in an etching step etching into the semiconductor substrate is done anisotropically through openings in the masking layer. It is proposed that as the masking layer (12), a structured, preferably monocrystalline, layer of the basic material of the semiconductor substrate be used, which is doped such that a pn junction is produced between the masking layer (12) and the semiconductor substrate (10), the junction being polarized in the depletion direction and serving as an etch stop. It is also proposed that the semiconductor substrate (10) be formed of a substrate (11) and at least one layer (13), applied thereon, with buried zones (16), with pn junctions being produced between the zones (16) and the substrate (11). Zones (16) that are electrically insulated from one another and the semiconductor substrate (10) are electrically bonded, so that the pn junctions are polarized in the depletion direction and serve as an etch stop for deep etching.
    • 提出了用于构造设置有基本掺杂的单晶半导体衬底的工艺,特别是具有(100)或(110)晶体取向的硅衬底。 在该工艺中,半导体衬底的至少一个主表面通过结构化掩模层钝化,并且在蚀刻步骤中,通过掩模层中的开口各向异性地进行蚀刻到半导体衬底中。 提出,作为掩模层(12),使用半导体衬底的基本材料的结构化的,优选单晶层,其被掺杂以使得在掩模层(12)和半导体层(12)之间产生pn结 衬底(10),所述结在耗尽方向上极化并用作蚀刻停止。 还提出半导体衬底(10)由衬底(11)和其上施加有至少一个层(13)形成,具有掩埋区域(16),在区域(16)和 基板(11)。 彼此电绝缘的区域(16)和半导体衬底(10)电连接,使得pn结在耗尽方向上极化,并用作深刻蚀的蚀刻停止。
    • 3. 发明授权
    • Process for anisotropic etching of silicon plates
    • 硅板的异相蚀刻工艺
    • US5071510A
    • 1991-12-10
    • US586803
    • 1990-09-24
    • Guenther FindlerHorst Muenzel
    • Guenther FindlerHorst Muenzel
    • H01L21/3063H01L21/308
    • H01L21/3081H01L21/3063Y10S438/928Y10S438/958
    • Electrochemical etching of silicon wafers or plates, on the front side of which a monocrystalline epitaxy layer is provided having a doping of a type opposite to the doping of the remainder of the silicon plate, so as to provide a pn or np junction, is performed with an organic photo film material of negative type and polyisoprene base serving as a passivating layer on the previously etched and metallized front (epitaxy) side. The film layer is held in place with the help of an adhesion promoting silane compound and covers the entire front side including the portions previously masked with silicon nitride or oxide. It is dried and hardened before exposure to the etchant which is used to etch the rear side of the plate until the etchant reaches the pn junction, where a small voltage bias applied to the junction from the front side assures an etch-stop. Etchants containing tetraalkylammonium hydroxide in water solution or in water-free form are preferred, with various additives as inhibitors, complexing agents and/or wetting agents.
    • 在其前侧提供具有与硅板的其余部分的掺杂相反的掺杂类型的单晶外延层以提供pn或np结的硅晶片或板的电化学蚀刻, 在预蚀刻和金属化的正面(外延)侧上具有负型有机摄影薄膜材料和用作钝化层的聚异戊二烯基底。 借助于增粘硅烷化合物将膜层保持在适当位置,并覆盖包括先前用氮化硅或氧化物掩蔽的部分的整个正面。 在暴露于用于蚀刻板的后侧的蚀刻剂之前将其干燥和硬化,直到蚀刻剂到达pn结,其中从前侧施加到接合处的小的电压偏置确保蚀刻停止。 含有水溶液中的四烷基氢氧化铵或无水形式的蚀刻剂是优选的,具有各种添加剂作为抑制剂,络合剂和/或润湿剂。
    • 9. 发明授权
    • Orifice element and valve with orifice element
    • 开孔元件和带孔元件的阀
    • US5553790A
    • 1996-09-10
    • US308720
    • 1994-09-19
    • Guenther FindlerJuergen BuchholzUdo Jauernig
    • Guenther FindlerJuergen BuchholzUdo Jauernig
    • B05B1/02F02M51/06F02M61/18F02M69/04F16K1/06B05B1/30
    • F02M61/184F02M51/0678F02M61/186F02M69/047
    • Orifice elements for use in valves for injecting fuel or a fuel-gas mixture. The orifice elements include two silicon plates, joined to one another. An upper plate has one or more injection orifices. The lower plate has a through hole introduced in it, through which a fuel jet can emerge. The lower plate follows in the downstream direction and includes a jet splitter. The jet splitter divides the through hole into at least two passthrough openings so that a dual-jet characteristic is produced or maintained for the valve. At least two conduits are formed between the upper plate and the lower plate. Gas is provided via the conduits and is mixed with the fuel discharged through the injection orifice. The injection orifice and the valve are particularly suited for injection systems of mixture-compressing internal-combustion engines having externally supplied ignition.
    • 用于喷射燃料或燃料 - 气体混合物的阀门的孔口元件。 孔元件包括彼此连接的两个硅板。 上板具有一个或多个喷射孔。 下板具有引入其中的通孔,通过该通孔可以出现燃料喷射。 下板沿着下游方向并且包括喷射分离器。 喷射分流器将通孔分成至少两个直通开口,从而产生或保持阀的双喷射特性。 在上板和下板之间形成至少两个导管。 通过导管提供气体,并与通过喷射孔排出的燃料混合。 喷射孔和阀特别适合于具有外部供应点火的混合压缩内燃机的喷射系统。