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1. 发明申请

US20100089242A1 Plugging Resistant Mist Eliminator For Horizontal Gas Flow Built From Tubular Elements And Vane Type Lamella 失效
标题翻译：从管状元件和叶片类型Lamella构建的水平气体流动阻塞雾化消除器
公开(公告)号：US20100089242A1
公开(公告)日：2010-04-15
申请号：US12573681
申请日：2009-10-05
申请人： Hans-Peter Buthmann , Georg Neubauer , Detlef Weber
发明人： Hans-Peter Buthmann , Georg Neubauer , Detlef Weber
IPC分类号： B01D19/00
CPC分类号： B01D45/08
摘要： The invention is directed at a mist eliminator for horizontal gas flow applications which is built as a combination of tubular and vane type elements and which is used to separate droplets from flue gas flows in a flue gas desulphurisation (FGD).
摘要翻译：本发明涉及用于水平气体流动应用的除雾器，其被构造为管状和叶片型元件的组合，并且其用于在烟道气脱硫（FGD）中从烟道气流中分离液滴。

2. 发明授权

US08123844B2 Plugging resistant mist eliminator for horizontal gas flow built from tubular elements and vane type lamella 失效
标题翻译：用于从管状元件和叶片型薄片构建的水平气流的防堵消除器
公开(公告)号：US08123844B2
公开(公告)日：2012-02-28
申请号：US12573681
申请日：2009-10-05
申请人： Hans-Peter Buthmann , Georg Neubauer , Detlef Weber
发明人： Hans-Peter Buthmann , Georg Neubauer , Detlef Weber
IPC分类号： B01D50/00
CPC分类号： B01D45/08
摘要： The invention is directed at a mist eliminator for horizontal gas flow applications which is built as a combination of tubular and vane type elements and which is used to separate droplets from flue gas flows in a flue gas desulphurization (FGD).
摘要翻译：本发明涉及一种用于水平气体流动应用的除雾器，其被构造为管状和叶片型元件的组合，并且其用于在烟道气脱硫（FGD）中从烟道气流中分离液滴。

3. 发明授权

US08800778B2 Suspension solution filter sieve basket for use in flue gas desulphurization 有权
标题翻译：悬浮液过滤筛篮用于烟气脱硫
公开(公告)号：US08800778B2
公开(公告)日：2014-08-12
申请号：US13496890
申请日：2010-09-20
申请人： Georg Neubauer , Jakob Wilhelm , Detlef Weber
发明人： Georg Neubauer , Jakob Wilhelm , Detlef Weber
IPC分类号： B07B1/06 , B01D29/03 , B01D29/33
CPC分类号： B01D29/33 , B01D29/035 , B01D2201/184 , B01D2251/404 , B01D2257/302 , B01D2259/80
摘要： A suspension solution filter sieve basket for use in a flue gas desulfurization includes holes which widen in a flow direction of a suspension solution.
摘要翻译：用于烟道气脱硫的悬浮液过滤筛篮包括在悬浮液的流动方向上变宽的孔。

4. 发明申请

US20130263742A1 TUBE SEPARATOR AS A SEPARATOR OF VERY FINE PARTICLES FOR REDUCING FINE DUST EMISSIONS AND AVOIDING STACK RAIN 有权
标题翻译：作为用于减少微细排放和避免堆积雨的非常细的颗粒的分离器的管分离器
公开(公告)号：US20130263742A1
公开(公告)日：2013-10-10
申请号：US13994132
申请日：2011-11-28
申请人： Georg Neubauer , Detlef Weber
发明人： Georg Neubauer , Detlef Weber
IPC分类号： B01D45/08
CPC分类号： B01D45/08 , B01D45/06 , B01D45/12 , B01D46/0068 , B01D50/002 , B01D53/504 , B01D53/78 , B01D2251/404 , B01D2257/302 , F01M13/04
摘要： A separation system for separating drops from a flue gas flow for installation in a gas scrubber of a power plant or an incineration plant includes a front coarse separator arranged in a gas flow direction, and a rear final separator arranged in the gas flow direction. The rear final separator is provided to have a lower separation performance in comparison with an upstream separator in the gas flow direction and/or is provided as a tube separator.
摘要翻译：用于从烟道气流中分离液滴以安装在发电厂或焚化厂的气体洗涤器中的分离系统包括沿气流方向排列的前粗分离器和沿气流方向排列的后最终分离器。后端分离器被设置为与气流方向上的上游分离器相比具有较低的分离性能和/或作为管分离器提供。

5. 发明申请

US20120183446A1 SUSPENSION SOLUTION FILTER SIEVE BASKET FOR USE IN FLUE GAS DESULPHURIZATION 有权
标题翻译：悬浮溶液过滤器用于在气体脱硫中使用的篮子
公开(公告)号：US20120183446A1
公开(公告)日：2012-07-19
申请号：US13496890
申请日：2010-09-20
申请人： Georg Neubauer , Jakob Wilhelm , Detlef Weber
发明人： Georg Neubauer , Jakob Wilhelm , Detlef Weber
IPC分类号： B01D53/75 , B31F1/08
CPC分类号： B01D29/33 , B01D29/035 , B01D2201/184 , B01D2251/404 , B01D2257/302 , B01D2259/80
摘要： A suspension solution filter sieve basket for use in a flue gas desulfurization includes holes which widen in a flow direction of a suspension solution.
摘要翻译：用于烟道气脱硫的悬浮液过滤筛篮包括在悬浮液的流动方向上变宽的孔。

6. 发明授权

US09289708B2 Tube separator as a separator of very fine particles for reducing fine dust emissions and avoiding stack rain 有权
标题翻译：管分离器作为非常细的颗粒的分离器，用于减少细小的粉尘排放并避免堆积雨
公开(公告)号：US09289708B2
公开(公告)日：2016-03-22
申请号：US13994132
申请日：2011-11-28
申请人： Georg Neubauer , Detlef Weber
发明人： Georg Neubauer , Detlef Weber
IPC分类号： B01D41/00 , B01D45/08 , B01D46/00 , B01D50/00 , B01D45/12 , B01D45/06 , B01D53/78 , F01M13/04 , B01D53/50
CPC分类号： B01D45/08 , B01D45/06 , B01D45/12 , B01D46/0068 , B01D50/002 , B01D53/504 , B01D53/78 , B01D2251/404 , B01D2257/302 , F01M13/04
摘要： A separation system for separating drops from a flue gas flow for installation in a gas scrubber of a power plant or an incineration plant includes a front coarse separator arranged in a gas flow direction, and a rear final separator arranged in the gas flow direction. The rear final separator is provided to have a lower separation performance in comparison with an upstream separator in the gas flow direction and/or is provided as a tube separator.
摘要翻译：用于从烟道气流中分离液滴以安装在发电厂或焚化厂的气体洗涤器中的分离系统包括沿气流方向排列的前粗分离器和沿气流方向排列的后最终分离器。后端分离器被设置为与气流方向上的上游分离器相比具有较低的分离性能和/或作为管分离器提供。

7. 发明申请

US20090121314A1 Manufacturing method for forming an integrated circuit device and corresponding integrated circuit device 有权
标题翻译：用于形成集成电路器件和相应的集成电路器件的制造方法
公开(公告)号：US20090121314A1
公开(公告)日：2009-05-14
申请号：US11983899
申请日：2007-11-13
申请人： Ole Bosholm , Marco Lepper , Goetz Springer , Detlef Weber , Grit Bonsdorf , Frank Pietzschmann
发明人： Ole Bosholm , Marco Lepper , Goetz Springer , Detlef Weber , Grit Bonsdorf , Frank Pietzschmann
IPC分类号： H01L23/00 , H01L21/768
CPC分类号： H01L23/5258 , H01L21/31144 , H01L21/3148 , H01L21/3185 , H01L21/76816 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a manufacturing method for forming an integrated circuit device and to a corresponding integrated circuit device. The manufacturing method for forming an integrated circuit device comprises the steps of: forming a first level on a substrate; forming a second level above the first level; forming a cap layer on the second level which covers a first region of the level and leaves a second region uncovered; and simultaneously etching a first contact hole in the first region and a second contact hole in the second region such that the etching is selective to the cap layer in the second region and proceeds to a greater depth in the first region.
摘要翻译：本发明提供一种用于形成集成电路器件和相应的集成电路器件的制造方法。形成集成电路器件的制造方法包括以下步骤：在衬底上形成第一电平; 形成第一级以上的第二级; 在所述第二层上形成覆盖所述层的第一区域并留下未覆盖的第二区域的覆盖层; 同时蚀刻第一区域中的第一接触孔和第二区域中的第二接触孔，使得蚀刻对第二区域中的覆盖层具有选择性，并且在第一区域中进一步增加深度。

8. 发明授权

US08002882B2 Droplet separator installation 有权
标题翻译：滴液分离器安装
公开(公告)号：US08002882B2
公开(公告)日：2011-08-23
申请号：US11579393
申请日：2004-11-04
申请人： Detlef Weber
发明人： Detlef Weber
IPC分类号： B01D45/08
CPC分类号： F28F25/00 , B01D45/08
摘要： A droplet separator installation for gas washers, cooling towers etc. is described according to which a row of parallel droplet separator profiles is supported at a support construction by means of an intermediate construction. The intermediate construction serves for the support and the stabilization of the droplet separator profile row and for the support of a rinsing means for rinsing the droplet separator profile row.
摘要翻译：描述了用于气体洗涤器，冷却塔等的液滴分离器装置，根据该液滴分离器装置，通过中间结构在支撑结构处支撑一排平行的液滴分离器型材。中间结构用于液滴分离器轮廓排的支撑和稳定，并且用于支撑用于冲洗液滴分离器轮廓排的冲洗装置。

9. 发明申请

US20070243708A1 Manufacturing method for an integrated semiconductor contact structure having an improved aluminum fill 审中-公开
标题翻译：具有改进的铝填充的集成半导体接触结构的制造方法
公开(公告)号：US20070243708A1
公开(公告)日：2007-10-18
申请号：US11402675
申请日：2006-04-12
申请人： Jens Hahn , Tom Richter , Detlef Weber , Chung-Hsin Lin
发明人： Jens Hahn , Tom Richter , Detlef Weber , Chung-Hsin Lin
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： C23C14/046 , H01L21/2855 , H01L21/76882
摘要： The present invention provides a manufacturing method for an integrated semiconductor contact structure having an improved Aluminum fill comprising the steps of: forming contact holes in an insulation layer provided on a wafer, said contact holes having a respective bottom and respective sidewalls, said bottoms including a respective conductive area; introducing said wafer into a first PVD deposition chamber, said first PVD deposition chamber including a wafer bias means; and cold depositing a first Aluminum layer on the wafer in said first PVD deposition chamber, said first Aluminum layer covering said bottoms and said sidewalls of said contact holes and forming a seed layer; wherein during said step of cold depositing said first Aluminum layer on the wafer in said first PVD deposition chamber said wafer bias means is set to a bias in the range between 20 W and 700 W or −50 V to −800 V.
摘要翻译：本发明提供一种具有改进的铝填充物的集成半导体接触结构的制造方法，包括以下步骤：在设置在晶片上的绝缘层中形成接触孔，所述接触孔具有相应的底部和相应的侧壁，所述底部包括各导电面积; 将所述晶片引入第一PVD沉积室，所述第一PVD沉积室包括晶片偏置装置; 并且在所述第一PVD沉积室中在所述晶片上冷沉积第一铝层，所述第一铝层覆盖所述底部和所述接触孔的所述侧壁并形成种子层; 其中在所述第一PVD沉积室中将所述第一铝层冷沉积在所述晶片上的步骤期间，所述晶片偏置装置被设置为在20W和700W之间或-50V至-800V的范围内的偏压。

10. 发明申请

US20070218629A1 Method of fabricating an integrated memory device 审中-公开
标题翻译：制造集成存储器件的方法
公开(公告)号：US20070218629A1
公开(公告)日：2007-09-20
申请号：US11375590
申请日：2006-03-15
申请人： Matthias Kronke , Detlef Weber
发明人： Matthias Kronke , Detlef Weber
IPC分类号： H01L21/336
CPC分类号： H01L27/10858 , H01L27/10897
摘要： Method of fabricating an integrated memory device including the steps of providing a semiconductor substrate, including an array region and a support region; providing GC-lines in said array region and in said support region, wherein the GC-lines in said support region have a first height; providing in the array region bit line contacts projecting above said GC-lines, wherein said bit line contacts have a second height being higher than said first height; providing a first isolation layer, the maximum height of said GC-lines in said support region including the coverage of said first isolation layer being lower than said second height; providing a second isolation layer on said first isolation layer; and polishing said first isolation layer and said second isolation layer, such that a planar surface of the integrated memory device is provided and such that said bit line contacts are exposed.
摘要翻译：一种集成存储器件的制造方法，包括以下步骤：提供包括阵列区域和支撑区域的半导体衬底; 在所述阵列区域和所述支撑区域中提供GC线，其中所述支撑区域中的GC线具有第一高度; 提供在所述GC线上方突出的阵列区位线触点，其中所述位线触点具有高于所述第一高度的第二高度; 提供第一隔离层，所述支撑区域中所述GC线的最大高度包括所述第一隔离层的覆盖范围低于所述第二高度; 在所述第一隔离层上提供第二隔离层; 并且抛光所述第一隔离层和所述第二隔离层，使得提供所述集成存储器件的平坦表面，并使所述位线触点露出。

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