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1. 发明授权

US4456515A Method for making polarizers comprising a multiplicity of parallel electrically conductive strips on a glass carrier 失效
标题翻译：在玻璃载体上制造包括多个平行的导电条的偏振器的方法
公开(公告)号：US4456515A
公开(公告)日：1984-06-26
申请号：US28983
申请日：1979-04-11
申请人： Hans Krueger , Hans Rehme
发明人： Hans Krueger , Hans Rehme
IPC分类号： C23C14/04 , C23C14/22 , G02B5/30 , C23C15/00
CPC分类号： C23C14/225 , C23C14/04 , G02B5/3058 , Y10S359/90
摘要： A method for producing polarizers, comprising a multiplicity of parallel electrically conductive strips on a glass carrier, having a raster measurement of approximately 1/10 of the light wave length, is characterized in that a layer having a wavy surface is provided of conductive material, having a surface waviness with a period of approximately 50 nm perpendicular to the vapor application direction carried on a glass carrier by means of vapor deposition, selective chemical deposition and the like, with a prescribed deposition angle, and a portion of the material is removed by particle bombardment at a prescribed bombardment angle, with either electrically neutral particles or ions, so that an arrangement of a multiplicity of microstrips is provided in which the microstrips are parallel to one another and separated from and thus electrically insulated from one another on a glass carrier plate.
摘要翻译：一种用于制造偏振器的方法，其特征在于，在玻璃载体上具有多个光导测量值约为光波长的1/10的多个平行的导电条带，其特征在于具有波纹表面的层由导电材料提供，具有垂直于通过气相沉积，选择性化学沉积等在玻璃载体上携带的蒸汽施加方向的约50nm的表面波纹，具有规定的沉积角度，并且部分材料通过以规定的轰击角度进行粒子轰击，具有电中性粒子或离子，从而提供多个微带的布置，其中微带彼此平行并在玻璃载体上彼此分离并因此彼此电绝缘盘子。

2. 发明授权

US4646253A Method for imaging electrical barrier layers such as pn-junctions in semiconductors by means of processing particle-beam-induced signals in a scanning corpuscular microscope 失效
标题翻译：通过在扫描微球显微镜中处理粒子束诱导信号，在半导体中形成诸如pn结的电阻隔层的方法
公开(公告)号：US4646253A
公开(公告)日：1987-02-24
申请号：US599713
申请日：1984-04-12
申请人： Hans Rehme , Helmut Schink
发明人： Hans Rehme , Helmut Schink
IPC分类号： H01L21/66 , G01R31/265 , G01R31/302 , H01J37/26 , G01N23/22
CPC分类号： G01R31/2653
摘要： A method for high-precision imaging of electrical barrier layers (pn-junctions) in semiconductors by means of processing particle beam induced signals created during scanning with a corpuscular microscope, even when the electrical barrier layers are aligned perpendicularly or obliquely relative to a specimen surface. The path of the pn-junctions in cross-sections through semiconductor components may be identified with a high reliability such as within 0.1 .mu.m. Specific point (P(x,y), P(x+.DELTA.x, y+.DELTA.y), M(x,y), N(x,y), F(x,y)) is defined and particle beam induced signals generated along a scan line containing this specific point is compared with reference to particle beam induced signals generated along a further scanning line containing a point within a certain environment of the specific point first chosen with the comparison results being used to localize the electric barrier region profile.
摘要翻译：通过在用扫描显微镜扫描过程中产生的粒子束感应信号处理半导体中的电阻挡层（pn结）的高精度成像方法，即使当电阻挡层相对于试样表面垂直或倾斜地排列时。通过半导体部件的横截面中的pn结的路径可以以高可靠性来识别，例如在0.1μm以内。定义特定点（P（x，y），P（x + DELTA x，y + DELTA y），M（x，y），N（x，y），F（x，y）沿着包含该特定点的扫描线与参考沿着另外的扫描线产生的粒子束感应信号进行比较，该扫描线包含在特定点的特定环境中首先选择的点，其中比较结果用于定位电阻挡区域轮廓。

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