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1. 发明授权

US06541869B1 Scalable data processing apparatus 失效
标题翻译：可扩展数据处理设备
公开(公告)号：US06541869B1
公开(公告)日：2003-04-01
申请号：US09601457
申请日：2000-09-18
申请人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Rolf Magnue Berggren , Bengt Göran Gustafsson , Johan Roger Axel Karlsson
发明人： Hans Gude Gudesen , Per-Erik Nordal , Geirr I. Leistad , Rolf Magnue Berggren , Bengt Göran Gustafsson , Johan Roger Axel Karlsson
IPC分类号： H01L2348
CPC分类号： G11C11/22 , B82Y10/00 , G11C5/02 , H01L25/0657 , H01L2224/32145 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06555 , H01L2225/06572 , H01L2924/3011
摘要： In a scalable data processing apparatus, particularly a data storage apparatus, one or more thin-film devices which form a substantially planar layer comprise a plurality of sublayers of thin film. Two or more thin-film devices are provided as an integrated stack of the substantially planar layers which form the thin-film devices, such that the apparatus thereby forms a stacked configuration. Each thin-film device comprises one or more memory areas which form matrix addressable memories and additionally circuit areas which form electronic thin-film circuitry for controlling, driving and addressing memory cells in one or more memories. Each memory device has an interface to every other thin-film device in the apparatus, said interfaces being realized with communication and signal lines as well as supporting circuitry for processing extending vertically through dedicated interface areas in the thin-film device.
摘要翻译：在可伸缩的数据处理装置，特别是数据存储装置中，形成基本平坦的层的一个或多个薄膜装置包括多个薄膜子层。提供两个或更多个薄膜器件作为形成薄膜器件的基本上平面的层的集成堆叠，使得该器件由此形成堆叠结构。每个薄膜器件包括形成矩阵可寻址存储器的一个或多个存储区域，以及形成用于控制，驱动和寻址一个或多个存储器中的存储器单元的电子薄膜电路的附加电路区域。每个存储器件具有与装置中的每个其它薄膜器件的接口，所述接口通过通信和信号线实现，以及用于通过薄膜器件中的专用接口区垂直延伸的处理的支持电路。

2. 发明授权

US06429457B1 Field-effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US06429457B1
公开(公告)日：2002-08-06
申请号：US09380611
申请日：1999-09-15
申请人： Rolf Magnus Berggren , Bengt Goran Gustafsson , Johan Roger Axel Karlsson
发明人： Rolf Magnus Berggren , Bengt Goran Gustafsson , Johan Roger Axel Karlsson
IPC分类号： H01L2184
CPC分类号： H01L51/0508 , H01L29/6675 , H01L29/66848 , H01L29/66916 , H01L29/7827 , H01L29/78642 , H01L29/8083
摘要： A field-effect transistor is made with electrodes (2, 4, 5) and isolators (3) in vertically provided layers, such that at least the electrodes (4, 5) and the isolators (3) form a step (6) oriented vertically relative to the first electrode (2) or the substrate (1). Implemented as a junction field-effect transistor (JFET) or a metal-oxide semiconducting field-effect transistor (MOSFET) the electrodes (2, 5) forming respectively the drain and source electrode of the field-effect transistor or vice versa and the electrode (4) the gate electrode of the field-effect transistor. Over the layers in the vertical step (6) an amorphous, polycrystalline or microcrystalline inorganic or organic semiconductor material is provided and forms the active semiconductor of the transistor contacting the gate electrode (8) directly or indirectly and forming a vertically oriented transistor channel (9) of the p or n type between the first (2) and the second (5) electrode. In a method for fabrication of a field effect transistor a vertical step (6) is formed by a means of a photolithographic process and a soluble amorphous active semiconductor material (8) is deposited over the first electrode (2) and the vertical step (6) such that a vertically oriented transistor channel between the drain and source electrode (2, 5) is obtained. In a JFET the semiconductor material (8) contacts the gate electrode (4) directly. In a MOSFET a vertically oriented gate isolator (7) is provided between the gate electrode (4) and the semiconductor material (8).
摘要翻译：在垂直设置的层中，用电极（2,4,5）和隔离器（3）制成场效应晶体管，使得至少电极（4,5）和隔离器（3）形成一个取向的步骤（6）垂直于第一电极（2）或衬底（1）。实现为场效应晶体管（JFET）或金属氧化物半导体场效应晶体管（MOSFET），分别形成场效应晶体管的漏极和源极的电极（2,5）和电极（4）场效应晶体管的栅电极。在垂直步骤（6）中的层上，提供非晶，多晶或微晶无机或有机半导体材料，并直接或间接地形成与栅电极（8）接触的晶体管的有源半导体，并形成垂直取向的晶体管沟道（9 ）在第一（2）和第二（5）电极之间的p或n型。在制造场效应晶体管的方法中，通过光刻工艺形成垂直步骤（6），并且在第一电极（2）和垂直步骤（6）上沉积可溶性非晶有源半导体材料（8）），使得在漏极和源极（2,5）之间获得垂直取向的晶体管沟道。在JFET中，半导体材料（8）直接接触栅电极（4）。在MOSFET中，在栅电极（4）和半导体材料（8）之间提供垂直定向的栅极隔离器（7）。

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