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    • 1. 发明授权
    • Dry polymer and oxide veil removal for post etch cleaning
    • 用于后蚀刻清洁的干聚合物和氧化物面纱去除
    • US06479396B1
    • 2002-11-12
    • US09794055
    • 2001-02-28
    • Han XuAmy Ying ShenPhillip Gerard Clark, Jr.
    • Han XuAmy Ying ShenPhillip Gerard Clark, Jr.
    • H01L2100
    • H01L21/02063H01L21/31116H01L21/31138H01L21/76814H01L21/76838
    • In a process of preparing a via in a semiconductor substrate wafer in which vias are landed on tungsten, and in which resist is stripped using plasma or chemical based processes that do not remove the veils formed during the etch, the improvement of concurrently removing veil material, controlling the interface of the tungsten, and stripping the resist, comprising: a) depositing and patterning tungsten on a substrate; b) depositing an oxide as an interlevel dielectric on the tungsten; c) patterning the oxide using photolithography and a photoresist; d) etching the oxide using a plasma generated etching method in which veils made up of metals, carbon based materials and oxide based materials are formed on the tungsten and sidewalls of the vias; and e) stripping the resist using a dry polymer removal method employing process gases and reducing gases to concurrently cause resist stripping, removal of the veils, and control of the tungsten interface.
    • 在半导体衬底晶片中制备通孔的过程中,其中通孔在钨上着落,并且使用等离子体或基于化学的工艺剥离抗蚀剂,其不会去除在蚀刻期间形成的面纱,同时去除面纱材料的改进 控制钨的界面并剥离抗蚀剂,包括:a)在衬底上沉积和图案化钨; b)在钨上沉积作为层间电介质的氧化物; c)使用光刻法和光致抗蚀剂图案化氧化物; d )使用等离子体生成的蚀刻方法蚀刻氧化物,其中在金属的钨和侧壁上形成由金属,碳基材料和氧化物基材料构成的面纱; 使用采用工艺气体和还原气体的干聚合物去除方法剥离抗蚀剂,同时引起抗蚀剂剥离,去除面纱和控制钨界面。