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1. 发明授权

US08503230B2 Access method of non-volatile memory device 有权
标题翻译：非易失性存储器件的访问方法
公开(公告)号：US08503230B2
公开(公告)日：2013-08-06
申请号：US12588532
申请日：2009-10-19
申请人： Han Woong Yoo , KyoungLae Cho , Seung-Hwan Song , Heeseok Eun , Hong Rak Son
发明人： Han Woong Yoo , KyoungLae Cho , Seung-Hwan Song , Heeseok Eun , Hong Rak Son
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/3427 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3454 , G11C16/3459 , G11C2211/5621 , G11C2211/5634
摘要： Disclosed is an access method of a non-volatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the a threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell; and assigning the second memory cell to a selected sub-distribution from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell.
摘要翻译：公开了一种非易失性存储器件的存取方法，包括检测第一存储单元的阈值电压变化，第一存储单元的阈值电压变化能够物理地影响第二存储器单元; 以及根据所述第一存储器单元的阈值电压变化的距离，从所述多个子分布中将所述第二存储器单元分配给所选择的子分布，所述多个子分布对应于所述第二存储器的目标分布细胞。

2. 发明申请

US20100149868A1 Access method of non-volatile memory device 有权
标题翻译：非易失性存储器件的访问方法
公开(公告)号：US20100149868A1
公开(公告)日：2010-06-17
申请号：US12588532
申请日：2009-10-19
申请人： Han Woong Yoo , KyoungLae Cho , Seung-Hwan Song , Heeseok Eun , Hong Rak Son
发明人： Han Woong Yoo , KyoungLae Cho , Seung-Hwan Song , Heeseok Eun , Hong Rak Son
IPC分类号： G11C16/04
CPC分类号： G11C16/3427 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3454 , G11C16/3459 , G11C2211/5621 , G11C2211/5634
摘要： Disclosed is an access method of a non-volatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the a threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell; and assigning the second memory cell to a selected sub-distribution from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell.
摘要翻译：公开了一种非易失性存储器件的存取方法，包括检测第一存储单元的阈值电压变化，第一存储单元的阈值电压变化能够物理地影响第二存储器单元; 以及根据所述第一存储器单元的阈值电压变化的距离，从所述多个子分布中将所述第二存储器单元分配给所选择的子分布，所述多个子分布对应于所述第二存储器的目标分布细胞。

3. 发明授权

US08751900B2 Storage device having a non-volatile memory device and copy-back method thereof 有权
标题翻译：具有非易失性存储装置的存储装置及其复制方法
公开(公告)号：US08751900B2
公开(公告)日：2014-06-10
申请号：US13106892
申请日：2011-05-13
申请人： Yong June Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong , Yongtaew Yim , Jaehong Kim , KyoungLae Cho , Wootae Chang
发明人： Yong June Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong , Yongtaew Yim , Jaehong Kim , KyoungLae Cho , Wootae Chang
IPC分类号： G11C29/00 , H03M13/00
CPC分类号： G06F11/106 , H03M13/1102 , H03M13/136 , H03M13/152 , H03M13/155 , H03M13/2909 , H03M13/618
摘要： A storage device includes a non-volatile memory device outputting read data from a source area and a memory controller configured to execute an ECC operation on a plurality of vectors in the read data and to write the error-corrected read data into target area of the non-volatile memory device. The memory controller declares that a vector corresponding to a clean area is decoding pass without using a flag bit among the plurality of vectors during the error correction operation.
摘要翻译：存储装置包括从源区域输出读取数据的非易失性存储器装置和被配置为对读取数据中的多个向量执行ECC操作并将经纠错的读取数据写入到目标区域中的存储器控制器非易失性存储器件。存储器控制器声明对应于清洁区域的矢量是在纠错操作期间不使用多个矢量中的标志位的解码通过。

4. 发明申请

US20120257455A1 NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING NONVOLATILE MEMORY DEVICES 有权
标题翻译：非易失性存储器件和操作非易失性存储器件的方法
公开(公告)号：US20120257455A1
公开(公告)日：2012-10-11
申请号：US13211743
申请日：2011-08-17
申请人： Eun Chu Oh , Hong Rak Son , KyoungLae Cho , Junjin Kong
发明人： Eun Chu Oh , Hong Rak Son , KyoungLae Cho , Junjin Kong
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3454
摘要： Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time.
摘要翻译：操作包括多个单元串的非易失性存储器件的方法，每个单元串具有至少一个接地选择晶体管，多个存储单元和至少一个串选择晶体管，所述操作方法包括接收命令和地址，确定施加的电压响应于输入命令和地址的时间，以及在确定的电压施加时间期间，将特定电压施加到对应于输入地址的单元串的存储单元。

5. 发明授权

US08730738B2 Nonvolatile memory devices and methods of operating nonvolatile memory devices 有权
标题翻译：非易失性存储器件和操作非易失性存储器件的方法
公开(公告)号：US08730738B2
公开(公告)日：2014-05-20
申请号：US13211743
申请日：2011-08-17
申请人： Eun Chu Oh , Hong Rak Son , KyoungLae Cho , Junjin Kong
发明人： Eun Chu Oh , Hong Rak Son , KyoungLae Cho , Junjin Kong
IPC分类号： G11C11/34 , G11C16/06
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3454
摘要： Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time.
摘要翻译：操作包括多个单元串的非易失性存储器件的方法，每个单元串具有至少一个接地选择晶体管，多个存储单元和至少一个串选择晶体管，所述操作方法包括接收命令和地址，确定施加的电压响应于输入命令和地址的时间，以及在确定的电压施加时间期间，将特定电压施加到对应于输入地址的单元串的存储单元。

6. 发明授权

US08711624B2 Memory device and self interleaving method thereof 有权
标题翻译：存储器件及其自交插方法
公开(公告)号：US08711624B2
公开(公告)日：2014-04-29
申请号：US13236249
申请日：2011-09-19
申请人： Seonghyeog Choi , Hong Rak Son , Junjin Kong , Jaehong Kim , KyoungLae Cho , Yong June Kim
发明人： Seonghyeog Choi , Hong Rak Son , Junjin Kong , Jaehong Kim , KyoungLae Cho , Yong June Kim
IPC分类号： G11C11/34
CPC分类号： G11C11/5621 , G11C16/10 , G11C16/3404
摘要： A memory device includes a memory cell array, a self interleaver configured to interleave and load data on the fly into a buffer circuit using an interleaving scheme, and a control logic configured to control programming of the interleaved data in the memory cell array.
摘要翻译：存储器装置包括存储单元阵列，配置成使用交织方案将数据进行交错和加载到缓冲电路中的自交织器以及被配置为控制对存储单元阵列中的交错数据的编程的控制逻辑。

7. 发明申请

US20120069657A1 MEMORY DEVICE AND SELF INTERLEAVING METHOD THEREOF 有权
标题翻译：存储器件及其自动交错方法
公开(公告)号：US20120069657A1
公开(公告)日：2012-03-22
申请号：US13236249
申请日：2011-09-19
申请人： Seonghyeog CHOI , Hong Rak Son , Junjin Kong , Jaehong Kim , KyoungLae Cho , Yong June Kim
发明人： Seonghyeog CHOI , Hong Rak Son , Junjin Kong , Jaehong Kim , KyoungLae Cho , Yong June Kim
IPC分类号： G11C16/10 , G11C16/06
CPC分类号： G11C11/5621 , G11C16/10 , G11C16/3404
摘要： A memory device includes a memory cell array, a self interleaver configured to interleave and load data on the fly into a buffer circuit using an interleaving scheme, and a control logic configured to control programming of the interleaved data in the memory cell array.
摘要翻译：存储器装置包括存储单元阵列，配置成使用交织方案将数据交错和加载到缓冲器电路中的自交织器以及被配置为控制对存储单元阵列中的交错数据的编程的控制逻辑。

8. 发明申请

US20110283166A1 STORAGE DEVICE HAVING A NON-VOLATILE MEMORY DEVICE AND COPY-BACK METHOD THEREOF 有权
标题翻译：具有非易失性存储器件的存储器件及其复制方法
公开(公告)号：US20110283166A1
公开(公告)日：2011-11-17
申请号：US13106892
申请日：2011-05-13
申请人： Yong June Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong , Yongtaew Yim , Jaehong Kim , KyoungLae Cho , Wootae Chang
发明人： Yong June Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong , Yongtaew Yim , Jaehong Kim , KyoungLae Cho , Wootae Chang
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： G06F11/106 , H03M13/1102 , H03M13/136 , H03M13/152 , H03M13/155 , H03M13/2909 , H03M13/618
摘要： A storage device includes a non-volatile memory device outputting read data from a source area and a memory controller configured to execute an ECC operation on a plurality of vectors in the read data and to write the error-corrected read data into target area of the non-volatile memory device. The memory controller declares that a vector corresponding to a clean area is decoding pass without using a flag bit among the plurality of vectors during the error correction operation.
摘要翻译：存储装置包括从源区域输出读取数据的非易失性存储器装置和被配置为对读取数据中的多个向量执行ECC操作并将经纠错的读取数据写入到目标区域中的存储器控制器非易失性存储器件。存储器控制器声明对应于清洁区域的矢量是在纠错操作期间不使用多个矢量中的标志位的解码通过。

9. 发明申请

US20110314235A1 DATA STORAGE DEVICE AND WRITE METHOD THEREOF 审中-公开
标题翻译：数据存储设备及其写入方法
公开(公告)号：US20110314235A1
公开(公告)日：2011-12-22
申请号：US13163874
申请日：2011-06-20
申请人： Hyuck-Sun KWON , KyoungLae Cho
发明人： Hyuck-Sun KWON , KyoungLae Cho
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F3/0608 , G06F3/0641 , G06F3/0688 , G06F2212/401 , G06F2212/7201
摘要： A data storage device that includes a storage media, and a controller to compress raw data to be stored in the storage media, wherein the controller can add header and/or footer information to the compressed data. The controller of the data storage device can further change stored, compressed data by retrieving all or only some of the compressed stored data, uncompressing it, adding or changing the now uncompressed data, and then re-compressing it before adding either or both of header and footer to the compressed data. The storage media can be solid state devices, and can be used with a controller in a computer or a server, that can be part of any one or a multitude of types of networks, including, for example, an internet.
摘要翻译：包括存储介质的数据存储设备和用于压缩要存储在存储介质中的原始数据的控制器，其中控制器可以向压缩数据添加页眉和/或页脚信息。数据存储装置的控制器可以通过检索所有或仅一些压缩的存储数据，解压缩它，添加或改变现在未压缩的数据，然后在添加标头之一或两者之前对其进行重新压缩，来进一步改变存储的压缩数据和页脚到压缩数据。存储介质可以是固态设备，并且可以与计算机或服务器中的控制器一起使用，其可以是任何一种或多种类型的网络的一部分，包括例如因特网。

10. 发明授权

US09135111B2 Nonvolatile memory device and bad area managing method thereof 有权
标题翻译：非易失存储器件及其不良区域管理方法
公开(公告)号：US09135111B2
公开(公告)日：2015-09-15
申请号：US13431426
申请日：2012-03-27
申请人： Eun Chu Oh , KyoungLae Cho , Mankeun Seo , Junjin Kong
发明人： Eun Chu Oh , KyoungLae Cho , Mankeun Seo , Junjin Kong
IPC分类号： G11C29/00 , G06F11/00 , G11C11/34 , G11C8/00 , G06F11/10 , G11C5/02 , H01L27/115 , H01L27/06 , H01L27/28
CPC分类号： G06F11/1068 , G06F11/1016 , G06F11/1044 , G06F11/1048 , G06F11/1072 , G11C5/02 , G11C5/025 , G11C29/70 , G11C29/82 , G11C29/883 , H01L27/0688 , H01L27/11514 , H01L27/11521 , H01L27/1157 , H01L27/11578 , H01L27/11582 , H01L27/281
摘要： Example embodiments relate to a bad area managing method of a nonvolatile memory device. The nonvolatile memory device may include a plurality of memory blocks and each block may contain memory layers stacked on a substrate. According to example embodiments, a method includes accessing one of the memory blocks, judging whether the accessed memory block includes at least one memory layer containing a bad memory cell. If a bad memory cell is detected, the method may further include configuring the memory device to treat the at least one memory layer of the accessed memory block as a bad area.
摘要翻译：示例性实施例涉及非易失性存储器件的不良区域管理方法。非易失性存储器件可以包括多个存储器块，并且每个块可以包含堆叠在衬底上的存储器层。根据示例实施例，一种方法包括访问存储器块之一，判断所访问的存储器块是否包括至少一个包含坏存储器单元的存储器层。如果检测到不良存储器单元，则该方法还可以包括配置存储器件以将所访问的存储器块的至少一个存储器层视为不良区域。

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