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    • 1. 发明授权
    • Stable, concentratable chemical mechanical polishing composition and methods relating thereto
    • 稳定,可浓缩的化学机械抛光组合物及其相关方法
    • US08435896B2
    • 2013-05-07
    • US13039723
    • 2011-03-03
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • H01L21/302H01L21/461
    • H01L21/3212C09G1/16
    • A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method of preparing a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.
    • 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物,包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 水溶性纤维素; 任选地,非糖水溶性聚合物; 任选地,式I的水溶性酸化合物,其中R选自氢和C 1-5烷基,并且其中x是1或2; 任选地,络合剂; 任选地,氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外,提供了制备本发明的化学机械抛光组合物的方法和基材的化学机械抛光方法,包括:提供基材,其中所述基材是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸,氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。
    • 2. 发明申请
    • Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
    • 稳定,浓缩,水溶性纤维素自由化学机械抛光组合物
    • US20120225556A1
    • 2012-09-06
    • US13039705
    • 2011-03-03
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • H01L21/306C09K3/14C09K13/00
    • H01L21/3212C09G1/16
    • A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method for making a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.
    • 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物,包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 任选地,非糖水溶性聚合物; 任选地,式I的水溶性酸化合物,其中R选自氢和C 1-5烷基,并且其中x是1或2; 任选地,络合剂; 任选地,氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外,提供了制造本发明的化学机械抛光组合物的方法和基板的化学机械抛光方法,包括:提供基板,其中所述基板是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸,氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。
    • 3. 发明申请
    • Stable, concentratable chemical mechanical polishing composition and methods relating thereto
    • 稳定,可浓缩的化学机械抛光组合物及其相关方法
    • US20120225555A1
    • 2012-09-06
    • US13039723
    • 2011-03-03
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • H01L21/306C09K13/00
    • H01L21/3212C09G1/16
    • A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; a water soluble cellulose; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method of preparing a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.
    • 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物,包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 水溶性纤维素; 任选地,非糖水溶性聚合物; 任选地,式I的水溶性酸化合物,其中R选自氢和C 1-5烷基,并且其中x是1或2; 任选地,络合剂; 任选地,氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外,提供了制备本发明的化学机械抛光组合物的方法和基材的化学机械抛光方法,包括:提供基材,其中所述基材是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸,氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。
    • 4. 发明授权
    • Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
    • 稳定,浓缩,水溶性纤维素自由化学机械抛光组合物
    • US08440097B2
    • 2013-05-14
    • US13039705
    • 2011-03-03
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • Hamed LakroutJinjie ShiJoseph LetiziaXu LiThomas H. KalantarFrancis KelleyJ. Keith HarrisChristopher J. Tucker
    • C09K13/00
    • H01L21/3212C09G1/16
    • A chemical mechanical polishing composition useful for chemical mechanical polishing a semiconductor wafer containing an interconnect metal is provided, comprising, as initial components: water; an azole inhibitor; an alkali metal organic surfactant; a hydrotrope; a phosphorus containing agent; optionally, a non-saccharide water soluble polymer; optionally, a water soluble acid compound of formula I, wherein R is selected from a hydrogen and a C1-5 alkyl group, and wherein x is 1 or 2; optionally, a complexing agent; optionally, an oxidizer; optionally, an organic solvent; and, optionally, an abrasive. Also, provided is a method for making a chemical mechanical polishing composition of the present invention and a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate is a semiconductor wafer having copper interconnects; providing a chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; and, dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition exhibits a pH adjusted to a pH of 2 to 6 through the addition of at least one of phosphoric acid, magnesium hydroxide and lithium hydroxide.
    • 提供了用于化学机械抛光含有互连金属的半导体晶片的化学机械抛光组合物,包括作为初始组分的水; 唑类抑制剂; 碱金属有机表面活性剂; 水溶助长剂 含磷剂; 任选地,非糖水溶性聚合物; 任选地,式I的水溶性酸化合物,其中R选自氢和C 1-5烷基,并且其中x是1或2; 任选地,络合剂; 任选的氧化剂; 任选的有机溶剂; 和任选的研磨剂。 此外,提供了制造本发明的化学机械抛光组合物的方法和基板的化学机械抛光方法,包括:提供基板,其中所述基板是具有铜互连的半导体晶片; 提供本发明的化学机械抛光组合物; 提供化学机械抛光垫; 在化学机械抛光垫和基板之间的界面处以0.69至34.5kPa的向下力产生动态接触; 并且将化学机械抛光组合物分配到化学机械抛光垫或化学机械抛光垫与基底之间界面附近的化学机械抛光垫上; 其中所述化学机械抛光组合物通过加入磷酸,氢氧化镁和氢氧化锂中的至少一种而显示pH调节至2至6的pH。