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1. 发明申请

US20060081880A1 Organic field effect transistor and method for producing the same 失效
标题翻译：有机场效应晶体管及其制造方法
公开(公告)号：US20060081880A1
公开(公告)日：2006-04-20
申请号：US10542807
申请日：2004-02-27
申请人： Hajime Miyazaki , Daisuke Miura , Tomonari Nakayama , Hidemitsu Uno , Noboru Ono
发明人： Hajime Miyazaki , Daisuke Miura , Tomonari Nakayama , Hidemitsu Uno , Noboru Ono
IPC分类号： H01L31/109
CPC分类号： H01L51/0044 , H01L51/0003 , H01L51/0052 , H01L51/0055 , H01L51/0056 , H01L51/0545
摘要： There is provided a method for producing a field effect transistor with a high field-effect mobility using a simple method for forming an organic semiconductor layer. A method for producing an organic field effect transistor comprising an organic semiconductor layer, comprising a step of forming the organic semiconductor layer by the photodecomposition of a bicyclic compound containing in a molecule thereof at least one bicyclic ring represented by formula (1): wherein R1 and R3 each denotes a group for forming an aromatic ring or a heteroaromatic ring which may have a substituent, together with a group to be bonded to R1 or R3; R2 and R4 each denotes a hydrogen atom, an alkyl group, an alkoxy group, an ester group or a phenyl group; and X is a leaving group which denotes carbonyl group or —N═.
摘要翻译：提供了使用简单的形成有机半导体层的方法制造具有高场效应迁移率的场效应晶体管的方法。一种制造包含有机半导体层的有机场效应晶体管的方法，包括通过在其分子中分解含有至少一个由式（1）表示的二环的双环化合物的光分解形成有机半导体层的步骤：其中R R 1和R 3各自表示用于形成可以具有取代基的芳环或杂芳环的基团以及与R 1键合的基团或R 3 3; R 2和R 4各自表示氢原子，烷基，烷氧基，酯基或苯基; X是表示羰基或-N-的离去基团。

2. 发明授权

US07588959B2 Organic field effect transistor and method for producing the same 失效
标题翻译：有机场效应晶体管及其制造方法
公开(公告)号：US07588959B2
公开(公告)日：2009-09-15
申请号：US10542807
申请日：2004-02-27
申请人： Hajime Miyazaki , Daisuke Miura , Tomonari Nakayama , Hidemitsu Uno , Noboru Ono
发明人： Hajime Miyazaki , Daisuke Miura , Tomonari Nakayama , Hidemitsu Uno , Noboru Ono
IPC分类号： H01L51/40
CPC分类号： H01L51/0044 , H01L51/0003 , H01L51/0052 , H01L51/0055 , H01L51/0056 , H01L51/0545
摘要： There is provided a method for producing a field effect transistor with a high field-effect mobility using a simple method for forming an organic semiconductor layer. A method for producing an organic field effect transistor comprising an organic semiconductor layer, comprising a step of forming the organic semiconductor layer by the photodecomposition of a bicyclic compound containing in a molecule thereof at least one bicyclic ring represented by formula (1): wherein R1 and R3 each denotes a group for forming an aromatic ring or a heteroaromatic ring which may have a substituent, together with a group to be bonded to R1 or R3; R2 and R4 each denotes a hydrogen atom, an alkyl group, an alkoxy group, an ester group or a phenyl group; and X is a leaving group which denotes carbonyl group or —N═.
摘要翻译：提供了使用简单的形成有机半导体层的方法制造具有高场效应迁移率的场效应晶体管的方法。一种制造包含有机半导体层的有机场效应晶体管的方法，包括通过在其分子中分解含有至少一个由式（1）表示的双环的双环化合物的光分解形成有机半导体层的步骤：其中R1 R3表示可以具有取代基的芳香环或杂芳环的基团以及与R1或R3键合的基团。 R2和R4各自表示氢原子，烷基，烷氧基，酯基或苯基; X是表示羰基或-N-的离去基团。

3. 发明授权

US08021915B2 Field effect transistor, method of producing the same, and method of producing laminated member 失效
标题翻译：场效应晶体管，其制造方法以及层叠体的制造方法
公开(公告)号：US08021915B2
公开(公告)日：2011-09-20
申请号：US12354745
申请日：2009-01-15
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Hidetoshi Tsuzuki , Makiko Miyachi
IPC分类号： H01L51/00
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0077 , H01L51/0078 , H01L51/0533 , H01L51/0545
摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
摘要翻译：提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。

4. 发明授权

US07863081B2 Field effect transistor and method of manufacturing the same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07863081B2
公开(公告)日：2011-01-04
申请号：US10556184
申请日：2004-08-26
申请人： Tomonari Nakayama , Daisuke Miura
发明人： Tomonari Nakayama , Daisuke Miura
IPC分类号： H01L21/00 , H01L51/30
CPC分类号： H01L51/0077 , C07D487/22 , H01L51/0078 , H01L51/0545
摘要： Provided is a field effect transistor having an organic semiconductor layer, in which crystal grains having a maximum diameter of 10 μm or more account for 25% or more of the surface area of the organic semiconductor layer. The organic semiconductor layer preferably contains 7 to 200 crystal grains having a maximum diameter of 10 μm or more per 0.01 mm2. The organic semiconductor layer preferably contains a porphyrin crystal.
摘要翻译：提供了具有有机半导体层的场效应晶体管，其中最大直径为10μm以上的晶粒占有机半导体层的表面积的25％以上。有机半导体层优选含有每0.01mm2最大直径为10μm以上的7〜200个晶粒。有机半导体层优选含有卟啉结晶。

5. 发明申请

US20080308789A1 Field Effect Transistor and Method of Producing the Same 有权
标题翻译：场效应晶体管及其制作方法
公开(公告)号：US20080308789A1
公开(公告)日：2008-12-18
申请号：US10571688
申请日：2005-03-08
申请人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
发明人： Daisuke Miura , Tomonari Nakayama , Toshinobu Ohnishi , Makoto Kubota , Akane Masumoto , Satomi Sugiyama
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0077 , C07D487/22 , H01L51/0003 , H01L51/0525 , H01L51/0545
摘要： An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.
摘要翻译：本发明的目的是提供一种场效应晶体管，其表现出高场效应迁移率和高ON / OFF比，其可以简单地通过使用具有优异结晶性和取向性的卟啉化合物来制备。根据本发明晶体管的场效应晶体管至少含有有机半导体层，其中有机半导体层至少含有卟啉化合物，并且在9.9°至10.4°的布拉格角（2θ）范围内具有最大衍射强度I1 在使用CuKalpha辐射的X射线衍射中，在23.0°至26.0°的布拉格角（2θ）范围内的最大衍射强度I2强。

6. 发明授权

US07094625B2 Field effect transistor and method of producing the same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07094625B2
公开(公告)日：2006-08-22
申请号：US10535202
申请日：2004-03-26
申请人： Daisuke Miura , Tomonari Nakayama
发明人： Daisuke Miura , Tomonari Nakayama
IPC分类号： H01L51/40 , H01L21/00 , H01L51/00
CPC分类号： H01L51/0077 , H01L51/0003 , H01L51/0545
摘要： A field effect transistor having a high field effect mobility is provided which can be obtained by a simple method. The field effect transistor includes an organic semiconductor layer composed of a crystallized film of a naphthoporphyrin compound represented by formula (2), which is obtained by the conversion by heating of the coating film of a porphyrin compound represented by formula (1), the organic semiconductor layer having crystal grains with a maximum diameter of 1 μm or more, wherein R1 and R2 each independently denote at least one selected from the group consisting of hydrogen, halogen, hydroxyl, and alkyl having 1 to 12 carbon atoms; R3 denotes at least one selected from the group consisting of a hydrogen atom and an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.
摘要翻译：提供具有高场效应迁移率的场效应晶体管，其可以通过简单的方法获得。场效应晶体管包括由式（2）表示的萘卟啉化合物的结晶膜构成的有机半导体层，其通过加热由式（1）表示的卟啉化合物的涂膜，有机物具有最大直径为1μm以上的晶粒的半导体层，其中R 1和R 2各自独立地表示选自氢，卤素，羟基和具有1至12个碳原子的烷基; R 3表示选自氢原子和芳基中的至少一种; M表示2个氢原子，金属原子或金属氧化物。

7. 发明申请

US20060099732A1 Field effect transistor and method of producing the same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20060099732A1
公开(公告)日：2006-05-11
申请号：US10535202
申请日：2004-03-26
申请人： Daisuke Miura , Tomonari Nakayama
发明人： Daisuke Miura , Tomonari Nakayama
IPC分类号： H01L51/40
CPC分类号： H01L51/0077 , H01L51/0003 , H01L51/0545
摘要： A field effect transistor having a high field effect mobility is provided which can be obtained by a simple method. The field effect transistor includes an organic semiconductor layer composed of a crystallized film of a naphthoporphyrin compound represented by formula (2), which is obtained by the conversion by heating of the coating film of a porphyrin compound represented by formula (1), the organic semiconductor layer having crystal grains with a maximum metediar of 1 μm or more, wherein R1 and R2 each independently denote at least one selected from the group consisting of hydrogen, halogen, hydroxyl, and alkyl having 1 to 12 carbon atoms; R3 denotes at least one selected from the group consisting of a hydrogen atom and an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.
摘要翻译：提供具有高场效应迁移率的场效应晶体管，其可以通过简单的方法获得。场效应晶体管包括由式（2）表示的萘卟啉化合物的结晶膜构成的有机半导体层，其通过加热由式（1）表示的卟啉化合物的涂膜，有机物具有1mum以上的最大元素的晶粒的半导体层，其中R 1和R 2各自独立地表示选自氢，卤素，羟基和具有1至12个碳原子的烷基; R 3表示选自氢原子和芳基中的至少一种; M表示2个氢原子，金属原子或金属氧化物。

8. 发明授权

US07795636B2 Organic semiconductor device, field-effect transistor, and their manufacturing methods 有权
标题翻译：有机半导体器件，场效应晶体管及其制造方法
公开(公告)号：US07795636B2
公开(公告)日：2010-09-14
申请号：US12410215
申请日：2009-03-24
申请人： Tomonari Nakayama , Toshinobu Ohnishi , Daisuke Miura
发明人： Tomonari Nakayama , Toshinobu Ohnishi , Daisuke Miura
IPC分类号： H01L51/40
CPC分类号： H01L51/052 , H01L51/0541 , H01L51/0545
摘要： An organic semiconductor device is provided which includes an organic semiconductor layer and an insulating layer. The insulating layer is made of a cured material formed from a composition containing a resin and a crosslinking agent. The resin contains an organic resin having a hydroxyl group. The crosslinking agent contains a compound having at least two crosslinking groups. At least one of the crosslinking groups is a methylol group or an NH group. The composition contains the crosslinking agent in the range of 15 to 45 percent by weight relative to 100 parts by weight in total of the resin and the crosslinking agent.
摘要翻译：提供一种包括有机半导体层和绝缘层的有机半导体器件。绝缘层由由包含树脂和交联剂的组合物形成的固化材料制成。树脂含有具有羟基的有机树脂。交联剂含有具有至少两个交联基团的化合物。至少一个交联基团是羟甲基或NH基。该组合物相对于树脂和交联剂的总共100重量份，含有15〜45重量％的交联剂。

9. 发明授权

US07791069B2 Field effect transistor and method of producing same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07791069B2
公开(公告)日：2010-09-07
申请号：US12493052
申请日：2009-06-26
申请人： Akane Masumoto , Daisuke Miura , Tomonari Nakayama
发明人： Akane Masumoto , Daisuke Miura , Tomonari Nakayama
IPC分类号： H01L51/30 , H01L51/40 , C07D487/22
CPC分类号： H01L51/0516 , H01L51/001 , H01L51/0077
摘要： A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms; R3 is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.
摘要翻译：提供了一种场效应晶体管，其包括有机半导体层，该有机半导体层包含具有由通式（1）表示的单苯并卟啉骨架的化合物：其中R 1和R 2独立地选自氢原子，卤原子，羟基基团和烷基，烯基，氧烷基，硫代烷基，烷基酯和芳基各自具有1至12个碳原子，条件是相邻的R 1可以相同或不同且相邻的R 2可以相同或不同，并且至少两个 R2不是氢原子; R3是氢原子或芳基; M表示2个氢原子，金属原子或金属氧化物。

10. 发明授权

US07586117B2 Field effect transistor and method of producing same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07586117B2
公开(公告)日：2009-09-08
申请号：US10583126
申请日：2005-03-16
申请人： Akane Masumoto , Daisuke Miura , Tomonari Nakayama
发明人： Akane Masumoto , Daisuke Miura , Tomonari Nakayama
IPC分类号： H01L51/30 , H01L51/40 , C07D487/22
CPC分类号： H01L51/0516 , H01L51/001 , H01L51/0077
摘要： A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R1 and R2 are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R1 may be the same or different and adjacent R2 may be the same or different and that at least two of R2 are not hydrogen atoms; R3 is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.
摘要翻译：提供了一种场效应晶体管，其包括有机半导体层，该有机半导体层包含具有由通式（1）表示的单苯并卟啉骨架的化合物：其中R 1和R 2独立地选自氢原子，卤原子，羟基基团和烷基，烯基，氧烷基，硫代烷基，烷基酯和芳基各自具有1至12个碳原子，条件是相邻的R 1可以相同或不同且相邻的R 2可以相同或不同，并且至少两个 R2不是氢原子; R3为氢原子或芳基; M表示2个氢原子，金属原子或金属氧化物。

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