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    • 1. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US08852386B2
    • 2014-10-07
    • US12883761
    • 2010-09-16
    • Hachishiro IizukaYuki MochizukiJun Abe
    • Hachishiro IizukaYuki MochizukiJun Abe
    • H01L21/3065H01J37/32
    • H01J37/32834H01J37/32091
    • A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.
    • 一种等离子体处理装置,包括:喷淋头,其通过设置在面对安装台的淋浴头的面对面上的多个气体排出孔向喷射模式的基板供给气体; 多个排气孔设置在淋浴喷头的相对面上; 沿着所述安装台的圆周安装的可垂直移动的环形构件,并且构造成在升高位置形成由所述安装台,所述淋浴头和所述环形构件包围的处理空间; 多个气体供给孔,其在所述环状部件的内壁上开口,向所述处理空间供给气体; 以及在所述环状构件的内壁中开口的多个排气孔,以对所述处理空间进行抽真空。
    • 2. 发明申请
    • PLASMA PROCESSING APPARATUS AND SHOWER HEAD
    • 等离子体加工设备和淋浴头
    • US20110067815A1
    • 2011-03-24
    • US12888664
    • 2010-09-23
    • Hachishiro IizukaJun AbeYuki Mochizuki
    • Hachishiro IizukaJun AbeYuki Mochizuki
    • H01L21/3065
    • H01J37/3244H01J37/3266
    • A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars.
    • 一种等离子体处理装置,包括安装在用于处理基板的处理室内的淋浴喷头,面对用于将基板安装在其上的安装台,并通过多个气体排出孔向喷射基板喷射气体 设置在所述淋浴喷头的面向所述安装台的面对面上; 多个排气孔,其形成为穿过所述淋浴喷头,从所述喷淋头的相对表面延伸到与所述相对表面相反的表面; 多个杆状磁体柱直立放置在与相对表面侧的排气孔连通的排气空间中; 以及驱动单元,其通过移动至少一部分磁体柱来改变磁体柱和排气孔之间的距离。
    • 3. 发明授权
    • Plasma processing apparatus and shower head
    • 等离子处理装置和淋浴头
    • US08747609B2
    • 2014-06-10
    • US12888664
    • 2010-09-23
    • Hachishiro IizukaJun AbeYuki Mochizuki
    • Hachishiro IizukaJun AbeYuki Mochizuki
    • H01L21/3065C23F1/00C23C16/00
    • H01J37/3244H01J37/3266
    • A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars.
    • 一种等离子体处理装置,包括安装在用于处理基板的处理室内的淋浴喷头,面对用于将基板安装在其上的安装台,并通过多个气体排出孔向喷射基板喷射气体 设置在所述淋浴喷头的面向所述安装台的面对面上; 多个排气孔,其形成为穿过所述淋浴喷头,从所述喷淋头的相对表面延伸到与所述相对表面相反的表面; 多个杆状磁体柱直立放置在与相对表面侧的排气孔连通的排气空间中; 以及驱动单元,其通过移动至少一部分磁体柱来改变磁体柱和排气孔之间的距离。
    • 4. 发明申请
    • PLASMA PROCESSING APPARATUS
    • 等离子体加工设备
    • US20110061813A1
    • 2011-03-17
    • US12883761
    • 2010-09-16
    • Hachishiro IizukaYuki MochizukiJun Abe
    • Hachishiro IizukaYuki MochizukiJun Abe
    • H01L21/465
    • H01J37/32834H01J37/32091
    • A plasma processing apparatus includes a shower head that supplies a gas toward a substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing a mounting table; a multiple number of gas exhaust holes provided in the facing surface of the shower head; a vertically movable ring-shaped member that is installed along a circumference of the mounting table and is configured to form, at a raised position, a processing space surrounded by the mounting table, the shower head and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member to supply a gas into the processing space; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member to evacuate the processing space.
    • 一种等离子体处理装置,包括:喷淋头,其通过设置在面对安装台的淋浴头的面对面上的多个气体排出孔向喷射模式的基板供给气体; 多个排气孔设置在淋浴喷头的相对面上; 沿着所述安装台的圆周安装的可垂直移动的环形构件,所述可垂直移动的环形构件被构造成在升高位置形成由所述安装台,所述淋浴喷头和所述环形构件包围的处理空间; 多个气体供给孔,其在所述环状部件的内壁上开口,向所述处理空间供给气体; 以及在所述环状构件的内壁中开口的多个排气孔,以对所述处理空间进行抽真空。
    • 5. 发明申请
    • SUBSTRATE PROCESSING APPARATUS
    • 基板加工设备
    • US20100307686A1
    • 2010-12-09
    • US12793859
    • 2010-06-04
    • Hachishiro IizukaYuki Mochizuki
    • Hachishiro IizukaYuki Mochizuki
    • C23F1/08C23C16/44
    • H01L21/67115H01L21/67103
    • Provided is a substrate processing apparatus capable of effectively heating each component without generating an abnormal electric discharge. The substrate processing apparatus 10 includes: a depressurizable processing chamber 11; a susceptor 12 provided within the processing chamber 11; a shower head 27 provided at a ceiling portion of the processing chamber 11 so as to face the susceptor 12; a focus ring 24 provided at an outer peripheral portion of a top surface of the susceptor 12; and a ring-shaped infrared radiant heater 26 provided in a vicinity of the focus ring 24. The heater 26 includes an infrared radiator 26a and a quartz ring 26b for sealing the infrared radiator 26a therein.
    • 提供一种能够有效地加热各部件而不产生异常放电的基板处理装置。 基板处理装置10包括:可减压处理室11; 设置在处理室11内的基座12; 设置在处理室11的顶部以便与基座12相对的淋浴头27; 设置在基座12的上表面的外周部的聚焦环24; 以及设置在聚焦环24附近的环状红外辐射加热器26.加热器26包括用于将红外辐射体26a密封在其中的红外辐射体26a和石英环26b。