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1. 发明申请

WO2009015119A2 METHODS OF MAKING LOW-REFRACTIVE INDEX AND/OR LOW-K ORGANOSILICATE COATINGS 审中-公开
标题翻译：制造低折射率和/或低K有机硅涂层的方法
公开(公告)号：WO2009015119A2
公开(公告)日：2009-01-29
申请号：PCT/US2008070714
申请日：2008-07-22
申请人： HONEYWELL INT INC , ZHOU DE LING , FAN WENYA , RAMOS TERESA A , LEUNG ROGER Y , SMITH PETER A , APEN PAUL G , DANIELS BRIAN J , NAMAN ANANTH , ROTH ROBERT R
发明人： LEUNG ROGER Y , SMITH PETER A , APEN PAUL G , DANIELS BRIAN J , NAMAN ANANTH , ROTH ROBERT R
IPC分类号： C08G77/32 , C08G77/44
CPC分类号： C09D183/02 , H01L51/5262 , Y10T428/249953
摘要： A method for forming a substantially transparent nanoporous organosilicate film on a substantially transparent substrate, for use in optical lighting devices such as organic light emitting diodes (OLEDs). The method includes first preparing a composition comprising a silicon containing pre-polymer, a porogen, and a catalyst. The composition is coated onto a substrate which is substantially transparent to visible light, forming a film thereon. The film is then gelled by crosslinking and cured by heating, such that the resulting cured film is substantially transparent to visible light. It is preferred that both the substrate and the nanoporous film are at least 98% transparent to visible light. Optical devices which include the resulting structures of this invention exhibit improved light extraction and illuminance where the nanoporous organosilicate film has a low refractive index in the range of 1.05 to 1.4, serving as an impedance matching layer in such devices.
摘要翻译：一种在基本上透明的基底上形成基本透明的纳米多孔有机硅酸盐膜的方法，用于诸如有机发光二极管（OLED）的光学照明装置中。该方法包括首先制备包含含硅预聚物，致孔剂和催化剂的组合物。将组合物涂布在对可见光基本透明的基底上，在其上形成膜。然后通过交联使膜凝胶化并通过加热固化，使得所得固化膜对可见光基本上是透明的。优选的是，衬底和纳米多孔膜对可见光透明至少98％。包括本发明所得结构的光学器件表现出改进的光提取和照度，其中纳米多孔有机硅酸盐膜具有在1.05至1.4范围内的低折射率，用作这种器件中的阻抗匹配层。

2. 发明申请

WO2004068555A3 REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS 审中-公开
标题翻译：损坏的电介质材料和膜的修复和恢复
公开(公告)号：WO2004068555A3
公开(公告)日：2005-02-03
申请号：PCT/US2004002252
申请日：2004-01-26
申请人： HONEYWELL INT INC , FAN WENYA , LU VICTOR , THOMAS MICHAEL , DANIELS BRIAN , NGUYEN TIFFANY , ZHOU DE-LING , NAMAN ANANTH , JIN LEI , BHANAP ANIL
发明人： FAN WENYA , LU VICTOR , THOMAS MICHAEL , DANIELS BRIAN , NGUYEN TIFFANY , ZHOU DE-LING , NAMAN ANANTH , JIN LEI , BHANAP ANIL
IPC分类号： H01L21/312 , H01L21/47 , H01L21/76
CPC分类号： H01L21/31058 , H01L21/3105 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
摘要翻译：本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。此外，本文描述了用于减少膜和/或缺碳膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

3. 发明申请

WO2004041972A3 GAS LAYER FORMATION MATERIALS 审中-公开
标题翻译：气体层形成材料
公开(公告)号：WO2004041972A3
公开(公告)日：2004-07-15
申请号：PCT/US0334816
申请日：2003-10-31
申请人： HONEYWELL INT INC , LI BO , ZHOU DE-LING , NAMAN ANANTH , APEN PAUL
发明人： LI BO , ZHOU DE-LING , NAMAN ANANTH , APEN PAUL
IPC分类号： C08G61/02 , C08L65/00 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01B3/30 , H01L21/47 , H01L21/4763
CPC分类号： H01L21/76829 , C08G61/02 , C08L65/00 , H01L21/312 , H01L21/3121 , H01L21/31695 , H01L21/76801 , H01L21/76808 , H01L21/7682 , H01L23/5222 , H01L23/5329 , H01L2221/1036 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers (72) are used in microchips and multichip modules.
摘要翻译：本发明提供选自苊烯均聚物的气层形成材料; 苊烯共聚物; 聚（亚芳基醚）; 聚酰胺; B阶多功能丙烯酸酯/甲基丙烯酸酯; 交联苯乙烯二乙烯基苯聚合物; 苯乙烯和二乙烯基苯与马来酰亚胺或双马来酰亚胺的共聚物。形成的气体层（72）用于微芯片和多芯片模块。

4. 发明申请

WO2005114707A3 MATERIALS SUITABLE FOR SHALLOW TRENCH ISOLATION 审中-公开
标题翻译：适用于浅层分离的材料
公开(公告)号：WO2005114707A3
公开(公告)日：2006-01-26
申请号：PCT/US2005013497
申请日：2005-04-20
申请人： HONEYWELL INT INC , JIN LEI , NAMAN ANANTH , LU VICTOR
发明人： JIN LEI , NAMAN ANANTH , LU VICTOR
IPC分类号： C23C18/12 , H01L21/00 , H01L21/316 , H01L21/76 , H01L21/762
CPC分类号： C23C18/122 , C23C18/06 , C23C18/1212 , C23C18/1254 , C23C18/1283 , H01L21/316 , H01L21/76227
摘要： The invention relates to semiconductor device fabrication and more specifically to a method and material for forming of shallow trench isolation structures in integrated circuits. A silica dielectric film is formed by preparing a composition comprising a silicon containing pre-polymer, optionally water, and optionally a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles. The substrate is then coated with the composition to form a film. The film is then crosslinked to produce a gelled film. The gelled film is then heated at a temperature of from about 750 °C to about 1000 °C for a duration effective to remove substantially all organic moieties and to produce a substantially crack-free silica dielectric film.
摘要翻译：本发明涉及半导体器件制造，更具体地涉及用于在集成电路中形成浅沟槽隔离结构的方法和材料。通过制备包含含硅预聚物，任选的水和任选的选自鎓化合物和亲核试剂的金属离子的催化剂的组合物来形成二氧化硅介电膜。然后用该组合物涂覆基材以形成膜。然后将膜交联以产生凝胶膜。然后将凝胶膜在约750℃至约1000℃的温度下加热持续有效的时间以去除基本上所有的有机部分并产生基本上无裂纹的二氧化硅介电膜。

5. 发明申请

WO2011008918A3 GROOVED CMP POLISHING PAD 审中-公开
标题翻译：抛光CMP抛光垫
公开(公告)号：WO2011008918A3
公开(公告)日：2011-04-28
申请号：PCT/US2010042073
申请日：2010-07-15
申请人： CABOT MICROELECTRONICS CORP , TSAI CHING-MING , SUN FRED , LIU SHENG-HUAN , HSU JIA-CHENG , NAMAN ANANTH , CHIU HAO-KUANG , KHANNA DINESH
发明人： TSAI CHING-MING , SUN FRED , LIU SHENG-HUAN , HSU JIA-CHENG , NAMAN ANANTH , CHIU HAO-KUANG , KHANNA DINESH
IPC分类号： H01L21/304
CPC分类号： B24B37/26
摘要： The present invention provides polishing pads for use in CMP processes. In one embodiment, a pad comprises a surface defining a plurality of grooves with landing surfaces separating the grooves, the landing surfaces together defining a substantially coplanar polishing surface, each groove having a depth of at least 10 mil and a width, WG, with any two adjacent grooves being separated from each other a landing surface having a width, WL, wherein the quotient WL/WG is less than or equal to 3. In a preferred embodiment, the surface of the pad defines a series of concentric substantially circular grooves. In an alternative embodiment, the surface of the pad defines a spiral groove having a depth of at least 10 mil and a width WG, and a spiral landing surface outlining spiral groove the having a width, WL, wherein the spiral landing surface defines a substantially coplanar polishing surface and the quotient WL/WG is less than or equal to 3.
摘要翻译：本发明提供了用于CMP工艺的抛光垫。在一个实施例中，垫包括限定具有分离凹槽的着陆表面的多个凹槽的表面，所述着陆表面一起限定基本上共面的抛光表面，每个凹槽具有至少10密耳的深度和宽度WG，任何两个相邻的凹槽彼此分离具有宽度WL的着陆表面，其中商WL / WG小于或等于3.在优选实施例中，垫的表面限定一系列同心的基本上圆形的凹槽。在替代实施例中，垫的表面限定具有至少10密耳深度和宽度WG的螺旋槽，以及螺旋着陆表面，其具有宽度为WL的螺旋槽，其中螺旋着陆表面限定了基本上共面抛光面和商WL / WG小于或等于3。

6. 发明申请

WO2006033836A2 TREATING AGENT MATERIALS 审中-公开
标题翻译：处理试剂材料
公开(公告)号：WO2006033836A2
公开(公告)日：2006-03-30
申请号：PCT/US2005031936
申请日：2005-09-07
申请人： HONEYWELL INT INC
发明人： BHANAP ANIL S , KOROLEV BORIS A , LEUNG ROGER Y , MUNOZ BETH C , RAMOS TERESA A , ROTH ROBERT R , APEN PAUL G , ENDISCH DENIS H , DANIELS BRIAN J , NAMAN ANANTH , IWAMOTO NANCY
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02219 , H01L21/02222 , H01L21/02282 , H01L21/02343 , H01L21/02359 , H01L21/76814
摘要： A treating agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent which may be an acid, a base, an onium compound, a dehydrating agent, and combinations thereof, and an optional solvent or mixture of a main solvent and a co-solvent.
摘要翻译：一种用于在施加到所述膜上时增加有机硅酸盐玻璃介电膜的疏水性的处理剂组合物。它包括能够通过甲硅烷基化将有机硅酸盐玻璃介电膜的硅烷醇部分烷基化或芳基化的组分，以及可以是酸，碱，鎓化合物，脱水剂及其组合的活化剂和任选的溶剂或主要溶剂和共溶剂的混合物。

7. 发明公开

EP1588411A4 REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS 审中-公开
标题翻译：修复和受损DIELEKTRISCHERMATERIALIEN和电影恢复
公开(公告)号：EP1588411A4
公开(公告)日：2008-10-01
申请号：EP04705341
申请日：2004-01-26
申请人： HONEYWELL INT INC
发明人： FAN WENYA , LU VICTOR , THOMAS MICHAEL , DANIELS BRIAN , NGUYEN TIFFANY , ZHOU DE-LING , NAMAN ANANTH , JIN LEI , BHANAP ANIL
IPC分类号： H01L21/312 , H01L21/3105 , H01L21/768
CPC分类号： H01L21/31058 , H01L21/3105 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

8. 发明专利

AU2003295370A8 Gas layer formation materials 未知
公开(公告)号：AU2003295370A8
公开(公告)日：2004-06-07
申请号：AU2003295370
申请日：2003-10-31
申请人： HONEYWELL INT INC
发明人： ZHOU DE-LING , NAMAN ANANTH , APEN PAUL , LI BO
IPC分类号： C08G61/02 , C08L65/00 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01B3/30 , H01L21/47 , H01L21/4763
摘要： The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

9. 发明专利

AU2003219658A1 ORGANIC COMPOSITIONS 未知
公开(公告)号：AU2003219658A1
公开(公告)日：2003-07-30
申请号：AU2003219658
申请日：2003-01-13
申请人： HONEYWELL INT INC
发明人： APEN PAUL G , NAMAN ANANTH , LI BO , LAU KREISLER , KOROLEV BORIS A , IWAMOTO NANCY , BEDWELL WILLIAM B
IPC分类号： C08G61/02 , H01L21/312 , H01L21/316

10. 发明专利

SG141441A1 TREATING AGENT MATERIALS 未知
公开(公告)号：SG141441A1
公开(公告)日：2008-04-28
申请号：SG2008020851
申请日：2005-09-07
申请人： HONEYWELL INT INC
发明人： BHANAP ANIL S , KOROLEV BORIS A , LEUNG ROGER Y , MUNOZ BETH C , RAMOS TERESA A , ROTH ROBERT R , APEN PAUL G , ENDISCH DENIS H , DANIELS BRIAN J , NAMAN ANANTH , IWAMOTO NANCY
摘要： TREATING AGENT MATERIALS A treating agent composition for increasing the hydrophobicity of an organosilicate glass dielectric film when applied to said film. It includes a component capable of alkylating or arylating silanol moieties of the organosilicate glass dielectric film via silylation, and an activating agent which may be an acid, a base, an onium compound, a dehydrating agent, and combinations thereof, and an optional solvent or mixture of a main solvent and a co-solvent.

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