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    • 9. 发明专利
    • Method of manufacturing field emission cathode
    • 制造场发射阴极的方法
    • JP2011129260A
    • 2011-06-30
    • JP2009283809
    • 2009-12-15
    • Honda Motor Co Ltd本田技研工業株式会社
    • NISHIJIMA MITSUTAKAHIGASHITANI KENICHIIWASA TAKASHI
    • H01J9/02
    • H01J1/304H01J9/025
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a field emission cathode, which method exerts no adverse effect on element characteristics when etching is performed using an ion beam. SOLUTION: (a) An insulating layer 2, a gate electrode layer 3, and a sacrificial layer 4 made of a thermosetting resin that develops Vickers hardness in the range of Hv 95 to 140 by heating are formed on a substrate 1 in this order and the sacrificial layer 4 is held at 180-210°C for a predetermined period of time to be cured. (b) An opening 5 is formed in the sacrificial layer 4 and the gate electrode layer 3 by applying a focused ion beam thereto. (c) A cavity 6 is formed by etching the insulating layer 2 by using the sacrificial layer 4 and the gate electrode layer 3 as a mask. (d) An emitter electrode 8 is formed on the substrate 1 in the cavity 6 by vapor deposition of an emitter material 7 onto the substrate 1 vertically from above. (e) The emitter material 7 is removed together with the sacrificial layer 4 from the gate electrode layer 3. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:为了提供一种制造场致发射阴极的方法,该方法在使用离子束进行蚀刻时对元件特性没有不利影响。 解决方案:(a)在基板1上形成绝缘层2,栅极电极层3和由热固性树脂制成的牺牲层4,所述热固性树脂通过加热而在Hv95至140范围内显示维氏硬度 该顺序和牺牲层4在180-210℃下保持固化一段预定时间。 (b)通过向其施加聚焦离子束,在牺牲层4和栅电极层3中形成开口5。 (c)通过使用牺牲层4和栅极电极层3作为掩模来蚀刻绝缘层2来形成腔体6。 (d)通过从上方垂直地将发射体材料7气相沉积到基板1上,在空腔6的基板1上形成发射电极8。 (e)发射极材料7与牺牲层4一起从栅电极层3去除。版权所有(C)2011,JPO&INPIT