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1. 发明专利

JPS62206846A JIG FOR WAFER 失效
公开(公告)号：JPS62206846A
公开(公告)日：1987-09-11
申请号：JP4839986
申请日：1986-03-07
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , SUDO YOSHIAKI , HASHIMOTO TOMOHIKO
IPC分类号： H01L21/677 , H01L21/67 , H01L21/68
摘要： PURPOSE:To hold a wafer stably by holding the wafer by supporting three points in the wafer. CONSTITUTION:A jig has three sliding arms 1, 1', 1'', and supports a large- diameter wafer at three points. The sliding arms 1, 1' push the wafer against the sliding arm 1'' by the elastic force of a spring section 3, and support the wafer by three points. The quality of material of a rubber group or a light metal is used as the quality of material of the sliding arms. Accordingly, the wafer can be carried positively by supporting three points in the wafer.

2. 发明专利

JPS62195142A WAFER CARRIER 失效
公开(公告)号：JPS62195142A
公开(公告)日：1987-08-27
申请号：JP3517886
申请日：1986-02-21
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , SUDO YOSHIAKI , HASHIMOTO TOMOHIKO
IPC分类号： H01L21/673 , H01L21/67 , H01L21/68
摘要： PURPOSE:To carry large-aperture wafers using a carrier suitable to these by providing a hole in part of the large-aperture wafers. CONSTITUTION:Large-aperture wafers 1 can be transferred collectively every lot using a supporting body (carrier) by providing an opening part 2 in part of the wafers 1. The supporting body consists of a knob 6, pedestal parts 3 and a barlike supporting body 5. Moreover, a housing body 4 is provided with grooves 8 for housing stably a plurality of the wafers and long notch parts 7 for housing the barlike supporting body. Thereby, the transfer and housing of the large-aperture wafers can be carried out safely and speedily while the reliability is secured.

3. 发明专利

JPS62150868A LEAD FRAME FOR SEMICONDUCTOR DEVICE AND RESIN SEALING METHOD USING SAME 失效
公开(公告)号：JPS62150868A
公开(公告)日：1987-07-04
申请号：JP29066385
申请日：1985-12-25
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , HASHIMOTO TOMOHIKO
IPC分类号： H01L23/48 , H01L21/56 , H01L23/50
摘要： PURPOSE:To save a lead frame member and the surface area of a mold for sealing with resin by a structure that the lead frame is longitudinally and laterally developed to correspond to a plurality of units. CONSTITUTION:A lead frame 6 is developed in lead frame units to laterally correspond to the elements of a plurality of units. The lead frame is developed to longitudinally correspond to the elements of the plurality of units. An IC pellet 10 is wire bonded between electrodes and leads 2 in the state connected with a tab 1. A resin mold 5 seals the elements of the two units of longitudinal direction. A semiconductor pellet 11 can be connected with the tabs 1 of all the units in good operating efficiency by relatively moving the lead frame in a direction of an arrow. In this case, the longitudinal units are formed of one resin block as designated by broken lines 5, and the resin can be then cut.

4. 发明专利

JPS62195113A SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS62195113A
公开(公告)日：1987-08-27
申请号：JP3518086
申请日：1986-02-21
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , SUDO YOSHIAKI , HASHIMOTO TOMOHIKO
IPC分类号： H01L21/02
摘要： PURPOSE:To stably convey a wafer by a method wherein notches are provided on the circumference of the wafer, and a belt having protruded parts corresponding to said notches is shifted. CONSTITUTION:Notches parts 3 (surrounded by a dotted line as shown in the diagram) are provided in the unused region in a wafer 1. The wafer 1 can be conveyed by fitting a handle 4 to the notched parts 3. Using the belt 7 having protruded parts 5, the wafer 1 can also be conveyed in a belt-conveyer system. As a result, the dropping trouble of the wafer arising when the wafer is being conveyed can be prevented, and especially, a stable conveyance of the wafer of large diameter can be made possible.

5. 发明专利

JPS62195112A SEMICONDUCTOR WAFER 失效
公开(公告)号：JPS62195112A
公开(公告)日：1987-08-27
申请号：JP3517986
申请日：1986-02-21
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , SUDO YOSHIAKI , HASHIMOTO TOMOHIKO
IPC分类号： H01L21/02
摘要： PURPOSE:To prevent the trouble arising while a wafer is being conveyed by a method wherein a hole is provided at a part of the wafer of a large diameter, a hole of concentric circle is perforated in the center of the wafer, and this hole is utilized when the wafer is conveyed. CONSTITUTION:An aperture part 2 is provided on a wafer 1, the wafer of a large diameter is shifted collectively for every lot. Also, the wafer can be housed collectively, if a housing box 4 is used, for example. Said aperture part 2 also furnishes a path for reaction gas, carrier gas and the like, their spreading round to the wafer surface can be made uniform, thereby enabling a semiconductor device to reduce the irregularity of its characteristics.

6. 发明专利

JPS62150834A METHOD AND APPARATUS FOR MOLDING SEMICONDUCTOR DEVICE WITH RESIN 失效
公开(公告)号：JPS62150834A
公开(公告)日：1987-07-04
申请号：JP29066485
申请日：1985-12-25
申请人： HITACHI MICROCUMPUTER ENG , HITACHI LTD
发明人： TAKAHASHI HIDEKAZU , HASHIMOTO TOMOHIKO
IPC分类号： H01L23/50 , H01L21/56 , H01L23/48
摘要： PURPOSE:To obtain a resin-molding machine which can expand a cavity space in the mold of the same volume by forming the mold in 3-dimensional structure. CONSTITUTION:A resin injection mold is constructed in 3 stages, and a gap for filling a lead frame 6 of stack type and a space cavity 8 for filling resin are formed between a lower mold 11 and an intermediate mold 12. A runner vertical hole 14 which communicates vertically with a boundary of two cavities is opened in the mold 12. The frame 6 is set between the mold 11 and the mold 12, and resin 16 is inserted to a resin charging unit 17 of an upper mold 13. The resin 16 is melted and pressurized to be filled in the cavity 8 through a runner 15 and the runner vertical hole 14, and solidified. The mold is composed of three stages to increase the number of cavities of approx. 1.5 times in the mold on the same volume.

7. 发明专利

JPS5928376A Semiconductor device and manufacture thereof 失效
标题翻译：半导体器件及其制造
公开(公告)号：JPS5928376A
公开(公告)日：1984-02-15
申请号：JP13729582
申请日：1982-08-09
申请人： Hitachi Ltd , Hitachi Micro Comput Eng Ltd
发明人： HAINO JIYUNICHI , SUDOU YOSHIAKI , HASHIMOTO TOMOHIKO , SHIMIZU SHIYUUICHI
IPC分类号： H01L29/812 , H01L21/28 , H01L21/338 , H01L29/43 , H01L29/45
CPC分类号： H01L29/452
摘要： PURPOSE:To contrive the uniformization of alloy reaction, reduction of contact resistance, and electrode short-circuit prevention by a method wherein one of substrate components is contained previously into an electrode before alloying heat treatment. CONSTITUTION:A source electrode 7 and a drain electrode 8 which contacts in ohmic manner with the GaAs substrate 1 are formed by superposing an Au layer 20 of approx. 4,000Angstrom , via an Ni layer 19 of the thickness approx. 1,500Angstrom , on a layer 18 of the thickness approx. 1,300Angstrom wherein Ga at approx. 2-3wt% (nearly the limit of solid solution) is contained to AuGe (12wt% Ge) and Au. Since Ga of substrate component is contained in the electrodes to the neighborhood of the limit of solid solution, the Ga does not infiltrate more from the substrate into the electrodes. Thereby, the sintering between the electrodes and the substrate does not generate, reaction is unified, electrode components do not infiltrate into the substrate, and accordingly short-circuit and poor withstand voltage do not occur. Since there is no variation of components of the substrate 1 in the electrode forming region, contact resistance is made low.
摘要翻译：目的：通过在合金化热处理前将基板成分预先包含在电极中的方法来设计合金反应的均匀化，接触电阻降低和电极短路防止。构成：通过将Au层20与GaAs衬底1重叠，形成与GaAs衬底1以欧姆方式接触的源电极7和漏电极8。 4,000Ang，通过Ni层19厚度约在一层厚度约为1800埃， 1,300Ang，其中Ga约为 AuGe（12wt％Ge）和Au含有2-3wt％（固溶极限）。由于基板成分的Ga包含在电极附近的固溶极限附近，因此Ga不会从基板向电极中渗透更多。因此，电极和基板之间的烧结不会产生，反应一致，电极部件不会渗透到基板中，因此不会发生短路和差的耐受电压。由于在电极形成区域中基板1的部件没有变化，所以接触电阻变低。

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